scholarly journals Room Temperature Optical Constants and Band Gap Evolution of Phase Pure M1-VO2Thin Films Deposited at Different Oxygen Partial Pressures by Reactive Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Meng Jiang ◽  
Yamei Li ◽  
Shaotang Li ◽  
Huaijuan Zhou ◽  
Xun Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Absorption Edge ◽  
Optical Constants ◽  
Near Infrared ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Partial Pressures ◽  
Phase Pure

Spectroscopic ellipsometry study was employed for phase pure VO2(M1) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO2(M1) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1) thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge(E1)at varied O2-Ar ratios are almost the same (~2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition(E2)decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.

A Study on the Preparation of TiO2-xNx Films by Reactive Deposition and Their Absorption Properties in Visible Region

2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Absorption Edge ◽  
Visible Region ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Nitrogen Doped

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.

Enhanced Crystallinity of Microcrystalline Silicon Thin Films Using Deuterium in Reactive Magnetron Sputter Deposition at 230°C

1998 ◽  
Vol 507 ◽  
Author(s):  
J. E. Gerbi ◽  
P. Voyles ◽  
J. M. Gibson ◽  
O J. R. Abelson
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Process ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Partial Pressures ◽  
Magnetron Sputter Deposition ◽  
Enhanced Crystallinity

ABSTRACTWe analyze the formation kinetics and microstructure of hydrogenated vs. deuterated microcrystalline (μc-Si:H or D) thin films using real-time spectroscopic ellipsometry, post- deposition thermal hydrogen evolution, and TEM. The films are deposited by reactive magnetron sputtering of a silicon target in Ar (1.65 mT) with added partial pressures of H2or D2(0-5.5mT) on Coming 7059 glass substrates at 230°C. Amorphous films are deposited when PH2=0. When hydrogen is added to the chamber, the reactive magnetron sputtering process generates a flux of fast neutral H which promotes stc-Si growth. The substitution of D for H varies the kinetics of hydrogen reflection from the target and implantation into the growing film. We analyze the amorphous to microcrystalline transition as a function of the isotope (H2or D2) and pressure used in the deposition process. We find that the films enter the microcrystalline regime at lower D2pressures than H2pressures. Furthermore, the <ε2> data determined by ellipsometry have a different shape for deuterated films, compared to hydrogenated films at similar growth pressures. This indicates changes in band structure which we interpret as evidence for enhanced crystallinity.

Optical constants of InN thin films on (111) GaAs grown by reactive magnetron sputtering

2002 ◽  
Vol 91 (12) ◽  
pp. 9803 ◽  
Author(s):  
H. F. Yang ◽  
W. Z. Shen ◽  
Z. G. Qian ◽  
Q. J. Pang ◽  
H. Ogawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Constants ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

2011 ◽  
Vol 406 (13) ◽  
pp. 2658-2662 ◽  
Author(s):  
Chaoquan Hu ◽  
Liang Qiao ◽  
Hongwei Tian ◽  
Xianyi Lu ◽  
Qing Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Fabrication of MgAl$_{2}$O$_{4}$ Thin Films on Ferromagnetic Heusler Alloy Fe$_{2}$CrSi by Reactive Magnetron Sputtering

2012 ◽  
Vol 51 (2) ◽  
pp. 02BM04 ◽  
Author(s):  
Naoto Fukatani ◽  
Keima Inagaki ◽  
Kenichiro Mari ◽  
Hirohito Fujita ◽  
Tetsuta Miyawaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Heusler Alloy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Electronic properties of Cr1−xAlxN thin films deposited by reactive magnetron sputtering

2002 ◽  
Vol 420-421 ◽  
pp. 312-317 ◽  
Author(s):  
R Sanjinés ◽  
O Banakh ◽  
C Rojas ◽  
P.E Schmid ◽  
F Lévy
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electronic Properties ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron
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