Optical constants of InN thin films on (111) GaAs grown by reactive magnetron sputtering

2002 ◽  
Vol 91 (12) ◽  
pp. 9803 ◽  
Author(s):  
H. F. Yang ◽  
W. Z. Shen ◽  
Z. G. Qian ◽  
Q. J. Pang ◽  
H. Ogawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Constants ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

scholarly journals Room Temperature Optical Constants and Band Gap Evolution of Phase Pure M1-VO2Thin Films Deposited at Different Oxygen Partial Pressures by Reactive Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Meng Jiang ◽  
Yamei Li ◽  
Shaotang Li ◽  
Huaijuan Zhou ◽  
Xun Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Absorption Edge ◽  
Optical Constants ◽  
Near Infrared ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Partial Pressures ◽  
Phase Pure

Spectroscopic ellipsometry study was employed for phase pure VO2(M1) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO2(M1) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1) thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge(E1)at varied O2-Ar ratios are almost the same (~2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition(E2)decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

2011 ◽  
Vol 406 (13) ◽  
pp. 2658-2662 ◽  
Author(s):  
Chaoquan Hu ◽  
Liang Qiao ◽  
Hongwei Tian ◽  
Xianyi Lu ◽  
Qing Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Fabrication of MgAl$_{2}$O$_{4}$ Thin Films on Ferromagnetic Heusler Alloy Fe$_{2}$CrSi by Reactive Magnetron Sputtering

2012 ◽  
Vol 51 (2) ◽  
pp. 02BM04 ◽  
Author(s):  
Naoto Fukatani ◽  
Keima Inagaki ◽  
Kenichiro Mari ◽  
Hirohito Fujita ◽  
Tetsuta Miyawaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Heusler Alloy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Electronic properties of Cr1−xAlxN thin films deposited by reactive magnetron sputtering

2002 ◽  
Vol 420-421 ◽  
pp. 312-317 ◽  
Author(s):  
R Sanjinés ◽  
O Banakh ◽  
C Rojas ◽  
P.E Schmid ◽  
F Lévy
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electronic Properties ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron
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