Physical properties of copper oxide thin films prepared by dc reactive magnetron sputtering under different oxygen partial pressures

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4831-4834 ◽  
Author(s):  
Chun-Lung Chu ◽  
Hsin-Chun Lu ◽  
Chen-Yang Lo ◽  
Chi-You Lai ◽  
Yu-Hsiang Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Copper Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Partial Pressures ◽  
Dc Reactive Magnetron Sputtering

Properties of Vanadium Oxide Films Prepared by DC Reactive Magnetron Sputtering at Different Oxygen Partial Pressures

2012 ◽  
Vol 538-541 ◽  
pp. 105-109 ◽  
Author(s):  
Ren Gui Huang ◽  
Dong Ping Zhang ◽  
Ting Zhang ◽  
Yan Li ◽  
You Tong Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Vanadium Oxide Thin Films

Due to their unique physical and chemical properties, vanadium oxide thin films have become a hot research topic. In the present work, Vanadium oxide thin films were prepared by DC reactive magnetron sputtering at different oxygen partial pressure and thermally annealed in Ar atmosphere at 500°C for 2 hours. The microstructure, transmittance, optical band gap, resistivity, and temperature coefficient resistance (TCR) were measured. The results suggest that increasing of oxygen partial pressure can obviously improve the optical and electric properties

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