scholarly journals Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3Thin Films Deposited by Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Pengyi Zhao ◽  
Shuying Cheng
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Narrow Band ◽  
Rf Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Electrical And Optical Properties ◽  
Photoelectric Properties ◽  
Sulfurization Temperature

Cu2SnS3is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu2SnS3thin films were successfully obtained by sulfurizing CuSnS2thin films deposited by RF magnetron sputtering at temperatures of 350–425°C for 2 h in an atmosphere of hydrogen sulfide and nitrogen. The influence of the sulfurization temperature on the electrical and optical properties of the Cu2SnS3thin films was investigated. The experimental results show that the Cu2SnS3thin films sulfurized at a temperature of 425°C exhibit better properties than others. The mobility and resistivity of the Cu2SnS3films are 9 cm2/V·s and 3 Ω·cm, respectively. And its optical band gap is estimated to be about 1.77 eV.

Structure and Optical Properties of ZnO Thin Film Preparation Using RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 377-380
Author(s):  
Shan Yu Quan ◽  
Lin Mei Yang ◽  
Cong Liu ◽  
Xu Dong Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gas Pressure ◽  
Visible Range ◽  
Zno Films ◽  
Ar Gas

The aim of this study is to obtain high-quality zinc oxide thin films by reactive radiofrequency (rf) magnetron sputtering. The thin films were prepared at constant total gas pressure, with different oxygen and argon contents. The ZnO samples were characterized by several methods. From XRD measurements it was confirmed that ZnO films are c-axis oriented, the line width and intensity are sensitive to O2/Ar gas pressure. All films exhibited excellent transmission (in excess of 70 %) in the visible range with a steep fall off in transmission at 425 nm. From the absorbance measurements the optical band-gap energy was extrapolated according the transmission spectrum. It shows that the optical band gap of the films increased from 3.233 eV to 3.288 eV with increase in the oxygen concentrations from 20 % to 70 %. Refractive indexes of the obtained thin films were carried out in this study.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

Effect of MWCNT addition on the optical band gap of PVA/CS transient biocomposites

2021 ◽  
pp. 002199832110370
Author(s):  
Ömer Bahadır Mergen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rapid Development ◽  
Measurement Techniques ◽  
Resistivity Measurement ◽  
Optical Parameters ◽  
Optical And Electrical Properties ◽  
Biocomposite Films

In recent years, as a result of increasing environmental concerns, biodegradable materials have gained great attention. With the rapid development of electronic technology, the importance of innovation and development of low-cost, sustainable, transient bioelectronics materials is increasing. In this research, the preparation of Poly(Vinyl Alcohol) (PVA), Chitosan (CS), and Multi-Walled Carbon nanotube (MWCNT) biocomposite films have been described. The solution mixing, ultrasonic mixing, and spin coating techniques were used to prepare the PVA/CS/MWCNT biocomposite thin films. UV–Vis absorption spectroscopy and two-point probe resistivity measurement techniques were used to study the optical and electrical properties of the biocomposite thin films. Optical band gap energies ( Eg) of PVA/CS/MWCNT biocomposites were obtained using the Tauc and Absorbance Spectrum Fitting (ASF) methods. Results obtained with both methods were found to be exactly the same. Experimental results have shown that with increasing MWCNT concentration, electrical conductivity (σ) increases from 1.75x10−16 S to 2.94x10−3 S, and Eg decreases significantly. At the same time, the fundamental optical parameters such as band tail (Urbach) energy ( Eu), refractive index ( n), absorption ( α), and extinction ( k) coefficient of the PVA/CS/MWCNT biocomposites were investigated in the UV-VIS range. The improvement observed in the optical and electrical properties of PVA/CS/MWCNT biocomposite films shows that these composites could be used as bioelectronics materials.

scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

2006 ◽  
Vol 41 (9) ◽  
pp. 889-892 ◽  
Author(s):  
Wei Du ◽  
Fujian Zong ◽  
Honglei Ma ◽  
Jin Ma ◽  
Min Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zinc Nitride ◽  
Reactive Rf Magnetron Sputtering

Optical and electrical properties of pure Ag and Ag-based alloy thin films prepared by RF magnetron sputtering

Vacuum ◽  
2002 ◽  
Vol 66 (3-4) ◽  
pp. 501-504 ◽  
Author(s):  
T Suzuki ◽  
Y Abe ◽  
M Kawamura ◽  
K Sasaki ◽  
T Shouzu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical And Electrical Properties
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