Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering

2006 ◽  
Vol 252 (22) ◽  
pp. 7983-7986 ◽  
Author(s):  
Fujian Zong ◽  
Honglei Ma ◽  
Wei Du ◽  
Jin Ma ◽  
Xijian Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zinc Nitride ◽  
Quartz Substrates ◽  
Reactive Rf Magnetron Sputtering

Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

2006 ◽  
Vol 41 (9) ◽  
pp. 889-892 ◽  
Author(s):  
Wei Du ◽  
Fujian Zong ◽  
Honglei Ma ◽  
Jin Ma ◽  
Min Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zinc Nitride ◽  
Reactive Rf Magnetron Sputtering

OPTICAL PROPERTIES OF N-DOPED Cu2O THIN FILMS DEPOSITED BY RF-MAGNETRON SPUTTERING Cu2O TARGET

2014 ◽  
Vol 21 (04) ◽  
pp. 1450052 ◽  
Author(s):  
GUOZHONG LAI ◽  
YANGWEI WU ◽  
LIMEI LIN ◽  
YAN QU ◽  
FACHUN LAI
Keyword(s):  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Model ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Energy Conversion Efficiency ◽  
Infrared Region ◽  
Intermediate Band ◽  
Quartz Substrates ◽  
Pure Cu

N -doped Cu 2 O films were deposited on quartz substrates by reactive magnetron sputtering a Cu 2 O target. The optical constants and thicknesses of the films with different nitrogen partial pressure (NPP) were retrieved from transmittance data by an optical model which combines the Forouhi–Bloomer model with modified Drude model. The results show that when NPP increases from 0.0 to 0.033 Pa, the optical gap decreases from 2.14 to 1.95 eV. Additionally, an optical absorption process in the infrared region below the optical band gap was observed for N -doped Cu 2 O films, which was not found in the pure Cu 2 O film. This is because an intermediate band (IB) in the band gap results from nitrogen doping. It is believed that N -doped Cu 2 O film with suitable NPP could be used to enhance the energy conversion efficiency for photovoltaic cells.

Zinc nitride films prepared by reactive RF magnetron sputtering of zinc in nitrogen containing atmosphere

2012 ◽  
Vol 45 (13) ◽  
pp. 135101 ◽  
Author(s):  
Nanke Jiang ◽  
Daniel G Georgiev ◽  
Ahalapitiya H Jayatissa ◽  
Robert W Collins ◽  
Jie Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zinc Nitride ◽  
Reactive Rf Magnetron Sputtering

Optimization of RF Magnetron Sputtering Process Parameters Based on Genetic Algorithm and Neural Network

2015 ◽  
Vol 1109 ◽  
pp. 481-485
Author(s):  
Norlina Mohd Sabri ◽  
Nor Diyana Md Sin ◽  
Mazidah Puteh ◽  
Mohamad Rusop
Keyword(s):  
Neural Network ◽  
Genetic Algorithm ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optimal Parameter ◽  
Rf Magnetron Sputtering ◽  
Process Parameter ◽  
Thin Film Fabrication ◽  
Parameter Combination

A procedure for RF magnetron sputtering process parameter optimization is proposed in this paper. This study has been focusing on determining the optimal parameter combination for producing the desirable optical band gap. In this proposed procedure, Genetic Algorithm (GA) has been adapted as the optimization tool, while Artificial Neural Network (ANN) has been implemented as the prediction model. GA was adapted to search for the optimal parameter combination from the set of parameters, while later the ANN modeling had been utilized to predict the optical band gap energies for each of the parameter combinations. The result from the GA optimization is expected to produce the highest band gap value. The computational results from the proposed procedure were then compared with the actual laboratory experimental results from the ZnO thin film fabrication. Based on the comparison result, the performance of the proposed procedure had proven to be promising in determining the most optimized process parameter combination from the set of parameters.

scholarly journals Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3Thin Films Deposited by Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Pengyi Zhao ◽  
Shuying Cheng
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Narrow Band ◽  
Rf Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Electrical And Optical Properties ◽  
Photoelectric Properties ◽  
Sulfurization Temperature

Cu2SnS3is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu2SnS3thin films were successfully obtained by sulfurizing CuSnS2thin films deposited by RF magnetron sputtering at temperatures of 350–425°C for 2 h in an atmosphere of hydrogen sulfide and nitrogen. The influence of the sulfurization temperature on the electrical and optical properties of the Cu2SnS3thin films was investigated. The experimental results show that the Cu2SnS3thin films sulfurized at a temperature of 425°C exhibit better properties than others. The mobility and resistivity of the Cu2SnS3films are 9 cm2/V·s and 3 Ω·cm, respectively. And its optical band gap is estimated to be about 1.77 eV.

Nitrogen Concentrations on Structural and Optical Properties of Aluminum Nitride Films Deposited by Reactive RF-Magnetron Sputtering

2013 ◽  
Vol 631-632 ◽  
pp. 186-191
Author(s):  
Amorn Thedsakhulwong ◽  
Kitsakorn Locharoenrat ◽  
Warawoot Thowladda
Keyword(s):  
Refractive Index ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Nitrogen Concentration ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Nitrogen Concentrations

We have fabricated Aluminum Nitride (AlN) films on the quartz substrates using RF-reactive magnetron sputtering method. The conditions of the films have been performed under different concentration ratios between nitrogen and argon. We have found that all obtained films were transparent in visible wavelength. By using X-ray diffraction (XRD) technique, it was found that the (002), (102) and (103) orientations were shown in XRD patterns. The (002) orientation was dominant when nitrogen concentration (CN) was at 40%. On the other hand, the refractive index and optical band gap energy of the films were determined as a function of CN. We have found that the refractive index weakly depended on CN, while optical band gap energy did not.

Structure and Optical Properties of ZnO Thin Film Preparation Using RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 377-380
Author(s):  
Shan Yu Quan ◽  
Lin Mei Yang ◽  
Cong Liu ◽  
Xu Dong Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gas Pressure ◽  
Visible Range ◽  
Zno Films ◽  
Ar Gas

The aim of this study is to obtain high-quality zinc oxide thin films by reactive radiofrequency (rf) magnetron sputtering. The thin films were prepared at constant total gas pressure, with different oxygen and argon contents. The ZnO samples were characterized by several methods. From XRD measurements it was confirmed that ZnO films are c-axis oriented, the line width and intensity are sensitive to O2/Ar gas pressure. All films exhibited excellent transmission (in excess of 70 %) in the visible range with a steep fall off in transmission at 425 nm. From the absorbance measurements the optical band-gap energy was extrapolated according the transmission spectrum. It shows that the optical band gap of the films increased from 3.233 eV to 3.288 eV with increase in the oxygen concentrations from 20 % to 70 %. Refractive indexes of the obtained thin films were carried out in this study.

Study of hydrogenated nanoamorphous silicon(na-Si:H) thin film prepared by RF magnetron sputtering for graded optical band gap (Eoptg)

2005 ◽  
Vol 40 (6) ◽  
pp. 1367-1370 ◽  
Author(s):  
Huacong Yu ◽  
Rongqiang Cui ◽  
He Wang ◽  
Hong Yang ◽  
Baichuan Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering
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