scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD

1989 ◽  
Vol 148 ◽  
Author(s):  
T. Egawa ◽  
S. Nozaki ◽  
N. Noto ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Intermediate Layer ◽  
Forward Bias ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Strained Layer Superlattice ◽  
Step Growth

ABSTRACTWe have studied the crystallinity and Schottky diode characteristics of GaAs/Si grown by MOCVD. In comparison with two-step growth and GaP/strained layer superlattice techniques, the crystallinity and the Schottky diode characteristics are superior for the GaAs/Si with Al0.5Ga0.5P as an intermediate layer. The GaAs/Si grown with the Al0.5Ga0.5 intermediate layer shows mirror—like surface morphology and an X-ray FMHM of 188 arcs. The ideality factor of the Schottky diode fabricated on the GaAs/Si grown with the Al0.5Ga0.5P intermediate layer is 1.06, but its forward current-voltage characteristic shows a significant leakage current at small forward bias. It is also found that the composition of Al affects strongly the crystallinity and the Schottky characteristics of GaAs/Si.

Conductivity of impurity graphene nanoribbons and gate electric field

2017 ◽  
Vol 31 (36) ◽  
pp. 1750340
Author(s):  
Natalia Konobeeva ◽  
Mikhail Belonenko
Keyword(s):  
Electric Field ◽  
Graphene Nanoribbons ◽  
Constant Electric Field ◽  
Tight Binding ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Tight Binding Approximation ◽  
Current Voltage

In this paper, we investigate the influence of a gate electric field on the tunneling current for the contact of impurity graphene nanoribbon with a metal or quantum dots. Based on the Hamiltonian for graphene in the tight-binding approximation, the density of states is calculated, which allows us to obtain a tunneling current. We analyze the effect of the field magnitude on the detecting possibility of an impurity in the graphene nanoribbon. A sufficient change of current–voltage characteristic (CVC) of the contact is observed, with an increase in the constant electric field applied parallel to the nanoribbon plane.

scholarly journals Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

2020 ◽  
Vol 54 (5) ◽  
pp. 466
Author(s):  
О.О. Маматкаримов ◽  
О. Химматкулов ◽  
И.Г. Турсунов
Keyword(s):  
Uniaxial Compression ◽  
Applied Voltage ◽  
Reverse Current ◽  
Voltage Characteristic ◽  
Surface Barrier ◽  
Current Voltage Characteristic ◽  
Current Sensitivity ◽  
Forward Current ◽  
Internal Gain ◽  
Current Voltage

Abstract The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb– p -Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.

Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics

2014 ◽  
Vol 10 (3) ◽  
pp. 362-378 ◽  
Author(s):  
Alexander S. Tonkoshkur ◽  
Alexander V. Ivanchenko
Keyword(s):  
Schottky Barrier ◽  
Potential Barrier ◽  
Voltage Characteristic ◽  
Arbitrary Form ◽  
Current Voltage Characteristic ◽  
Double Barrier ◽  
Content Type ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Metal Oxide Varistor

Purpose – The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach – The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings – The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value – The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

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