FORWARD CURRENT‐VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON

1969 ◽  
Vol 14 (1) ◽  
pp. 11-13 ◽  
Author(s):  
A. N. Saxena
Keyword(s):  
Schottky Barrier ◽  
Differential Resistance ◽  
Schottky Barrier Diode ◽  
Forward Current ◽  
Current Voltage ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Current Voltage Characteristics ◽  
Resistance Peak

Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

2016 ◽  
Vol 68 (6) ◽  
pp. 810-814
Author(s):  
In Ho Kang ◽  
Moon Kyong Na ◽  
Ogyun Seok ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode

2018 ◽  
Vol 85 (7) ◽  
pp. 59-65
Author(s):  
Moonkyong Na ◽  
Juyeon Keum ◽  
Jeong Hyun Moon ◽  
In Ho Kang ◽  
Wook Bahng
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Threading Dislocation ◽  
Current Voltage ◽  
Current Voltage Characteristics

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

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