scholarly journals Possibility to Use Low Temperature Pulsed RF Sputtered Indium Tin Oxide for the Fabrication of Organic Solar Cell

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Somnath Middya ◽  
Animesh Layek ◽  
Partha Pratim Ray

In this work we have used pulsed RF sputtering method to deposit indium tin oxide (ITO) for the fabrication of P3HT:PCBM based bulk heterojunction polymer solar cell. We have deposited ITO at low substrate temperature (100°C) and for different pulse modes. Oxygen was used as an admixture to the sputtering gas argon, and the percentage was varied from 0 to 6%. During deposition, plasma was studied by optical emission spectroscopy (OES) method. For our present range of deposition conditions lowest resistivity of ITO is around 2 × 10−4 Ω-cm, and it is deposited in High-Low mode with 1% of oxygen added to argon. The effect of oxygen admixture on electrical and optical properties of ITO thin films has been studied for different pulse modes. ITO films have been optimised by measuring their resistivity, transparency, and X-ray diffraction. Finally we have applied the ITO film for the fabrication of P3HT:PCBM based solar cell.

2012 ◽  
Vol 12 (16) ◽  
pp. 1676-1680
Author(s):  
Somnath Middya ◽  
Animesh Layek ◽  
Partha Pratim Ray

2008 ◽  
Vol 1074 ◽  
Author(s):  
Hauk Han ◽  
Jay Lewis ◽  
Terry Alford

ABSTRACTIndium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.


2012 ◽  
Vol 4 (2) ◽  
pp. 849-853 ◽  
Author(s):  
Jin Woo Cho ◽  
Se Jin Park ◽  
Jaehoon Kim ◽  
Woong Kim ◽  
Hoo Keun Park ◽  
...  

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.


2012 ◽  
Vol 209-211 ◽  
pp. 1719-1722
Author(s):  
Ming Guo Zhang ◽  
Nan Hai Sun

A thin Ag layer embedded between layers of zinc tin oxide (ZTO) are compared to cells using an indium tin oxide electrode was investigated for inverted organic bulk heterojunction solar cells employing a multilayer electrode. ZTO/Ag/ ZTO (ZAZ) electrode is the preparation at room temperature, a high transparency in the visible part of the spectrum, and a very low sheet resistance comparable to treated ITO without the need for any thermal post deposition treatment as it is necessary for ITO. The In-free ZAZ electrodes exhibit a favorable work function of 4.3 eV and are shown to allow for excellent electron extraction even without a further interlayer. This renders ZAZ a perfectly suited bottom electrode for inverted organic solar cells with simplified cell architecture.


2011 ◽  
Vol 209 (2) ◽  
pp. 369-372 ◽  
Author(s):  
Fu-Ching Tang ◽  
Jay Chang ◽  
Wei-Yang Chou ◽  
Horng-Long Cheng ◽  
Steve Lien-Chung Hsu ◽  
...  

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