Bulk Heterojunction Formation between Indium Tin Oxide Nanorods and CuInS2 Nanoparticles for Inorganic Thin Film Solar Cell Applications

2012 ◽  
Vol 4 (2) ◽  
pp. 849-853 ◽  
Author(s):  
Jin Woo Cho ◽  
Se Jin Park ◽  
Jaehoon Kim ◽  
Woong Kim ◽  
Hoo Keun Park ◽  
...  
2021 ◽  
Author(s):  
Muhammad Aamir Shafi ◽  
Amal Bouich ◽  
Laiq Khan ◽  
Hanif Ullah ◽  
Julia Mari Guaita ◽  
...  

Abstract Electrochemical deposition was used to create a quaternary CZTS (Cu2ZnSnS4) kesterite thin layer. An aqueous solution of CZTS was used to deposit a thin layer over Indium Tin Oxide. The effects of deposition time (variation) on CZTS thin films under ambient conditions were investigated in this study. Several available characterization systems were used to study the samples as they were produced. The polycrystalline description of the layer is inveterate by X-ray diffraction (XRD). The SEM as well as AFM study show that deposition time improved surface morphology and topography of CZTS thin films which increase several nm in grain size. Furthermore, depending upon the deposition duration, the optical study reveals an acceptable bandgap in a range of 1.44 to 1.71 eV. Characteristics of high-quality CZTS absorber layers for solar cell applications are discovered to be affected by deposition time variation. To check the effect of this bandgap variation (1.44 to 1.71 eV) on the performance of a CZTS based thin film solar cell, a simulation software SCAPS-1D is being used.


2019 ◽  
Vol 2 (2) ◽  
pp. 143-149
Author(s):  
Takehito Kato ◽  
Munechika Otsuka ◽  
Chihiro Oinuma ◽  
Yuki Kurokawa ◽  
Kenichi Tsukada

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Somnath Middya ◽  
Animesh Layek ◽  
Partha Pratim Ray

In this work we have used pulsed RF sputtering method to deposit indium tin oxide (ITO) for the fabrication of P3HT:PCBM based bulk heterojunction polymer solar cell. We have deposited ITO at low substrate temperature (100°C) and for different pulse modes. Oxygen was used as an admixture to the sputtering gas argon, and the percentage was varied from 0 to 6%. During deposition, plasma was studied by optical emission spectroscopy (OES) method. For our present range of deposition conditions lowest resistivity of ITO is around 2 × 10−4 Ω-cm, and it is deposited in High-Low mode with 1% of oxygen added to argon. The effect of oxygen admixture on electrical and optical properties of ITO thin films has been studied for different pulse modes. ITO films have been optimised by measuring their resistivity, transparency, and X-ray diffraction. Finally we have applied the ITO film for the fabrication of P3HT:PCBM based solar cell.


RSC Advances ◽  
2017 ◽  
Vol 7 (30) ◽  
pp. 18545-18552 ◽  
Author(s):  
Zhongming Du ◽  
Xiangxin Liu ◽  
Yufen Zhang ◽  
Ziyao Zhu

Radio frequency magnetron sputtered cadmium stannate (Cd2SnO4) or cadmium tin oxide (CTO) films were annealed in a nitrogen (N2) atmosphere.


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