Development of Indium Tin Oxide by Pulsed RF Sputtering Method for Solar Cell Application

2012 ◽  
Vol 12 (16) ◽  
pp. 1676-1680
Author(s):  
Somnath Middya ◽  
Animesh Layek ◽  
Partha Pratim Ray
Keyword(s):  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Solar Cell Application ◽  
Pulsed Rf

scholarly journals Possibility to Use Low Temperature Pulsed RF Sputtered Indium Tin Oxide for the Fabrication of Organic Solar Cell

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Somnath Middya ◽  
Animesh Layek ◽  
Partha Pratim Ray
Keyword(s):  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Rf Sputtering ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Ito Thin Films ◽  
Effect Of Oxygen ◽  
Pulsed Rf

In this work we have used pulsed RF sputtering method to deposit indium tin oxide (ITO) for the fabrication of P3HT:PCBM based bulk heterojunction polymer solar cell. We have deposited ITO at low substrate temperature (100°C) and for different pulse modes. Oxygen was used as an admixture to the sputtering gas argon, and the percentage was varied from 0 to 6%. During deposition, plasma was studied by optical emission spectroscopy (OES) method. For our present range of deposition conditions lowest resistivity of ITO is around 2 × 10−4 Ω-cm, and it is deposited in High-Low mode with 1% of oxygen added to argon. The effect of oxygen admixture on electrical and optical properties of ITO thin films has been studied for different pulse modes. ITO films have been optimised by measuring their resistivity, transparency, and X-ray diffraction. Finally we have applied the ITO film for the fabrication of P3HT:PCBM based solar cell.

Effective oxygen plasma treatment on indium tin oxide electrode to improve organic solar cell efficiency

2011 ◽  
Vol 209 (2) ◽  
pp. 369-372 ◽  
Author(s):  
Fu-Ching Tang ◽  
Jay Chang ◽  
Wei-Yang Chou ◽  
Horng-Long Cheng ◽  
Steve Lien-Chung Hsu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Organic Solar Cell ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Oxide Electrode ◽  
Indium Tin Oxide Electrode ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

Characteristics of Perovskite Solar Cells with ZnGa2O4:Mn Phosphor Mixed Polyvinylidene Fluoride Down-Conversion Layer

2021 ◽  
Vol 16 (6) ◽  
pp. 855-860
Author(s):  
Ji Yong Hwang ◽  
II Tae Kim ◽  
Hyung Wook Choi
Keyword(s):  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Polyvinylidene Fluoride ◽  
Perovskite Solar Cells ◽  
Soda Lime ◽  
Perovskite Solar Cell ◽  
Transport Layer ◽  
Soda Lime Glass ◽  
Down Conversion

To reduce the manufacturing cost of perovskite solar cells, soda-lime glass and transparent conducting oxides such as indium tin oxide and fluorine-doped tin oxide are the most widely used substrates and lighttransmitting electrodes. However, the transmittance spectra of soda-lime glass, indium tin oxide, and fluorinedoped tin oxide show that all light near and below 330 nm is absorbed; thus, with the use of these substrates, light energy near and below 330 nm cannot reach the perovskite light-absorbing layer. It is expected that the overall solar cell can be improved if the wavelength can be adjusted to reach the perovskite solar cell absorbing layer through down-conversion of energy in the optical wavelength band. In this study, a polyvinylidene fluoride transparent film mixed with a ZnGa2O4:Mn phosphor was applied to the incident side of the perovskite solar cell with the intent to increase the light conversion efficiency without changing the internal bandgap energy and structure. By adding a phosphor layer to the external surface of PSC exposed to incident light, the efficiency of the cell was increased by the down-conversion of ultraviolet light (290 nm) to the visible region (509 nm) while maintaining the transmittance. To manufacture the perovskite solar cell, a TiO2-based mesoporous electron transport layer was spin-coated onto the substrate. The perovskite layer used in this experiment was CH3NH3PbI3 and was fabricated on a TiO2 layer. Spiro-OMeTAD solution was spin-coated as a hole-transport layer.

scholarly journals Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

2021 ◽  
Vol 255 ◽  
pp. 05003
Author(s):  
Hao Chen ◽  
Alessandro Chiasera ◽  
Cristina Armellini ◽  
Giorgio Speranza ◽  
Stefano Varas ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Figure Of Merit ◽  
Rf Sputtering ◽  
Thin Layers ◽  
Radio Frequency Magnetron Sputtering ◽  
Amorphous Thin Films ◽  
Near Ir ◽  
Electric Contacts

Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.

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