scholarly journals Antenna Design for Directivity-Enhanced Raman Spectroscopy

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Aftab Ahmed ◽  
Yuanjie Pang ◽  
Ghazal Hajisalem ◽  
Reuven Gordon
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Ground Plane ◽  
Numerical Aperture ◽  
Circular Waveguide ◽  
Dipole Antenna ◽  
Electron Beam Evaporation ◽  
Beam Power ◽  
Raman Signal

Antenna performance can be described by two fundamental parameters: directivity and radiation efficiency. Here, we demonstrate nanoantenna designs in terms of improved directivity. Performance of the antennas is demonstrated in Raman scattering experiments. The radiated beam is directed out of the plane by using a ground plane reflector for easy integration with commercial microscopes. Parasitic elements and parabolic and waveguide nanoantennas with a ground plane are explored. The nanoantennas were fabricated by a series of electron beam evaporation steps and focused ion beam milling. As we have shown previously, the circular waveguide nanoantenna boosts the measured Raman signal by 5.5x with respect to a dipole antenna over a ground plane; here, we present the design process that led to the development of that circular waveguide nanoantenna. This work also shows that the parabolic nanoantenna produces a further fourfold improvement in the measured Raman signal with respect to a circular waveguide nanoantenna. The present designs are nearly optimal in the sense that almost all the beam power is coupled into the numerical aperture of the microscope. These designs can find applications in microscopy, spectroscopy, light-emitting devices, photovoltaics, single-photon sources, and sensing.

ORGANIC SEMICONDUCTOR MICRO-PILLAR PROCESSED BY FOCUSED ION BEAM MILLING

2005 ◽  
Vol 03 (supp01) ◽  
pp. 223-228 ◽  
Author(s):  
WEN-CHANG HUNG ◽  
A. ADAWI ◽  
A. TAHRAOUI ◽  
A. G. CULLIS
Keyword(s):  
Quantum Dot ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Micro Machining ◽  
Single Photon Emission ◽  
Fabrication Procedure ◽  
Pillar Structure

In order to control light, different strategies have been applied by placing an optically active medium into a semiconductor resonator and certain applications such as LEDs and laser diodes have been commercialized for many years. The possibility of nanoscale optical applications has created great interesting for quantum nanostructure research. Recently, single photon emission has been an active area of quantum dot research. A quantum dot is place between distributed Bragg reflectors (DBRs) within a micro-pillar structure. In this study, we shall report on an active layer composed of an organic material instead of a semiconductor. The micro-pillar structure is fabricated by a focused ion beam (FIB) micro-machining technique. The ultimate target is to achieve a single molecule within the micro-pillar and therefore to enable single photon emission. Here, we demonstrate some results of the fabrication procedure of a 5 micron organic micro-pillar via the focused ion beam and some measurement results from this study. The JEOL 6500 dual column system equipped with both electron and ion beams enables us to observe the fabrication procedure during the milling process. Furthermore, the strategy of the FIB micro-machining method is reported as well.

Superconducting Nanodevices

2017 ◽  
Author(s):  
J. Gallop ◽  
L. Hao
Keyword(s):  
Quantum Interference ◽  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Detectors ◽  
Superconducting Nanowires ◽  
Barrier Materials ◽  
Physical Scale ◽  
Nanoscale Fabrication ◽  
Quantum Technology

This article reviews recent progress in superconducting nanodevices, with particular emphasis on fabrication methods developed for superconducting nanowires and nanoscale Josephson junctions based on different barrier materials. It evaluates the future potential of superconducting nanodevices, including nano-superconducting quantum interference devices (nanoSQUIDs), in light of improvements in nanoscale fabrication and manipulation techniques, along with their likely impacts on future quantum technology and measurement. The article first considers efforts to realize devices at the physical scale of 100 nm and below before discussing different types of Josephson junction such as trilayer junctions. It also describes the use of focused ion beam milling and electron beam lithography techniques for junction fabrication at the nanoscale and the improved energy sensitivity detectable with a nanoSQUID. Finally, it looks at a range of applications for nanoSQUIDs, superconducting single photon detectors, and other superconducting nanodevices.

Instant Solid Immersion Lens Creation in Silicon with a Focused Ion Beam – Comparing Refractive and Diffractive Methods

2011 ◽  
Author(s):  
P. Scholz ◽  
U. Kerst ◽  
C. Boit ◽  
T. Kujawa ◽  
T. Lundquist
Keyword(s):  
Processing Time ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Numerical Aperture ◽  
Single Step ◽  
Sample Thickness ◽  
Similar Process ◽  
Solid Immersion Lens ◽  
General Aspects

Abstract The theoretical fundamentals of diffractive solid immersion lenses (dSILs) were revised and adapted to a new application: the direct single-step chemistry-assisted creation of binary dSILs in silicon with a focused ion beam (FIB). Current results were able to prove the general functionality of this technique, but also showed the limitations still present. These limitations were identified; the underlying problems were analyzed and were addressed by optimizing several aspects of the process. The presented dSIL has a diameter of 150 ìm and is created in 15 minutes of processing time. It is designed for a sample thickness of 70 µm, which can be well adjusted if needed. For this sample thickness, the theoretical numerical aperture is about 2.5, offering a significant improvement in resolution. Furthermore a comparison of diffractive and refractive solid immersion lenses is presented, both created in a similar process. Apart from general aspects of dSILs and rSILs (refractive SILs), details of the designs presented in this work are compared. This leads to the insight of which method (dSIL or rSIL) has its advantages for which type of application.

Focused-ion-beam overlay-patterning of three-dimensional diamond structures for advanced single-photon properties

2014 ◽  
Vol 116 (4) ◽  
pp. 044308 ◽  
Author(s):  
Qianqing Jiang ◽  
Dongqi Liu ◽  
Gangqin Liu ◽  
Yanchun Chang ◽  
Wuxia Li ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Three Dimensional

scholarly journals Bright Single-Photon Emitters with a CdSe Quantum Dot and Multimode Tapered Nanoantenna for the Visible Spectral Range

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 916
Author(s):  
Maxim Rakhlin ◽  
Sergey Sorokin ◽  
Dmitrii Kazanov ◽  
Irina Sedova ◽  
Tatiana Shubina ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spectral Range ◽  
Focused Ion Beam ◽  
Optical Pumping ◽  
Single Photon ◽  
Ion Beam ◽  
Visible Spectral Range ◽  
Single Photons ◽  
Free Space Optical ◽  
Single Photon Emitters

We report on single photon emitters for the green-yellow spectral range, which comprise a CdSe/ZnSe quantum dot placed inside a semiconductor tapered nanocolumn acting as a multimode nanoantenna. Despite the presence of many optical modes inside, such a nanoantenna is able to collect the quantum dot radiation and ensure its effective output. We demonstrate periodic arrays of such emitters, which are fabricated by focused ion beam etching from a II-VI/III-V heterostructure grown using molecular beam epitaxy. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 5 MHz with the second-order correlation function g(2)(0) = 0.25 at 220 K. Such single photon emitters are promising for secure free space optical communication lines.

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2020 ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Katja Barthelmi ◽  
Katherine Cochrane ◽  
Jonas Kiemle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Ana Micevic ◽  
Daniel Hernangómez-Pérez ◽  
Katja Barthelmi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

AbstractFor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

scholarly journals Single-photon emitters based on NIR color centers in diamond coupled with solid immersion lenses

2014 ◽  
Vol 12 (07n08) ◽  
pp. 1560011 ◽  
Author(s):  
D. Gatto Monticone ◽  
J. Forneris ◽  
M. Levi ◽  
A. Battiato ◽  
F. Picollo ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Nitrogen Vacancy ◽  
Color Centers ◽  
Enabling Technology ◽  
High Quantum Efficiency ◽  
Single Photon Emitters ◽  
Single Crystal Diamond

Single-photon sources represent a key enabling technology in quantum optics, and single color centers in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen-vacancy (NV) centers are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centers emitting in the near-infra red (NIR). In the present work, we report on the coupling of native NIR-emitting centers in high-quality single-crystal diamond with solid immersion lens (SIL) structures fabricated by focused ion beam (FIB) lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.

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