scholarly journals Analysis on Binding Energy and Auger Parameter for Estimating Size and Stoichiometry of ZnO Nanorods

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Santanu Bera ◽  
Sandip Dhara ◽  
S. Velmurugan ◽  
A. K. Tyagi
Keyword(s):  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Zno Nanorods ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Relaxation Energy ◽  
Auger Parameter ◽  
Surface Contaminants ◽  
Vapor Deposition Technique ◽  
Extra Peak

ZnO nanorods prepared through chemical vapor deposition technique are characterized by microscopic and X-ray photoelectron spectroscopy (XPS) techniques to correlate the effects of size on the binding energy of Zn 2p3/2 photoelectrons. A positive shift in Zn 2p3/2-binding energy as compared to that in bulk ZnO is assumed to be the effect of size of ZnO tips. The shift in binding energy has been explained in terms of relaxation energy in the photoemission process. Simultaneously, Auger parameter of the nanorods is evaluated for stoichiometric composition. The extra peak in O1s spectrum of nanorods is explained as adsorbed O-bearing species or surface contaminants.

Synthesis of ZnO Nanorod Arrays Structure on Si Substrate

2015 ◽  
Vol 1131 ◽  
pp. 53-59
Author(s):  
Suttinart Noothongkaew ◽  
Supakorn Pukird ◽  
Worasak Sukkabot ◽  
Ki Seok An
Keyword(s):  
Zno Nanorods ◽  
Chemical Vapor ◽  
Yellow Emission ◽  
Growth Time ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
X Ray Diffraction ◽  
Vapor Deposition Technique ◽  
Condensation Growth

ZnO nanorod arrays were synthesized with simple chemical vapor deposition technique with template without using catalyst by controlling the growth time and condensation growth. The surface morphology of nanostructure were characterized by using field emission scanning electron microscopy (FE-SEM), we found that the ZnO nanorod arrays were uniformly covered on substrate. The extremely strong ZnO (0002) peaks were observed by using X-ray diffraction (XRD), shown the preferred (0001) orientation and high crystalline quality of the ZnO nanostructures. The optical properties were investigated by using photoluminescence (PL). These results showed the contribution of green-yellow emission attributed to the strong inner reflection and scattering. Our results indicating that the uniform ZnO nanorods arrays can be synthesized by using a simplified method. Furthermore, they will be implemented as application for nanodevice fabrication or for gas sensors and solar cells.

scholarly journals Fast Formation of Surface Oxidized Zn Nanorods and Urchin-Like Microclusters

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
R. López ◽  
T. Díaz ◽  
G. García ◽  
E. Rosendo ◽  
R. Galeazzi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Hot Filament

Entangled Zn-ZnO nanorods and urchin-like microstructures were synthesized by the hot filament chemical vapor deposition technique at 825 and 1015°C, respectively. X-ray diffraction results showed a mixture of ZnO and Zn phases in both nanorods and urchin-like structures. The presence of Zn confirms the chemical dissociation of the ZnO solid source. The Z-ZnO nanorods with diameter of about 100 nm showed dispersed-like morphology. The urchin-like structures with micrometer diameters exhibited porous and rough morphology with epitaxial formation of nanorods.

scholarly journals Enhancement of Electrical Property of Carbon Nanotube by Silicon Incorporation

2020 ◽  
Vol 10 (1) ◽  
pp. 62-65
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray ◽  
Conductivity Increase ◽  
Vapor Deposition Technique ◽  
Si Content

Silicon incorporated carbon nano tube has been synthesized by radio frequency plasma enhanced chemical vapor deposition technique with acetylene gas. Tetraethyl orthosilicate solution was used for the synthesis of silicon incorporation in the CNT thin films. Energy dispersive X-ray analysis shows that the Si atomic percentage in the CNT thin films varied from 0 % to 3.82 %. The different chemical binding energies of carbon and silicon were analyzed from X-ray photoelectron spectroscopy spectra. In the XPS spectra, the peaks at ~531 eV, ~ 285 eV, ~151 eV and ~100 eV are the contributions from O 1s, C 1s, Si 2s and Si 2p respectively. Nanostructure morphologies of the Si-CNT thin films have been analyzed by field emission scanning electron microscopy. The length of the silicon incorporated carbon nano tubes ~100 nm and corresponding diameter ~20 nm. The increase of atomic percentage of Si in the CNT thin films, room temperature electrical conductivity increases. The electrical conductivity increase from 3.87x103 to 4.49x104 S cm-1 as the silicon atomic percentage in the CNT thin films increases from 0 to 3.82 % respectively. This study showed that the Si-CNTs thin films potentially useful in electrical application of varying its conductivity by changing the Si content independently from other parameters

scholarly journals Enhancing electrical properties of carbon nanotubes thin films by silicon incorporation

2021 ◽  
Vol 1206 (1) ◽  
pp. 012028
Author(s):  
Sk Faruque Ahmed ◽  
Mohibul Khan ◽  
Nillohit Mukherjee
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray ◽  
Vapor Deposition Technique

Abstract Silicon incorporated carbon nanotube (Si-CNTs) thin films was prepared by radio frequency plasma enhanced chemical vapor deposition technique. Tetraethyl orthosilicate solution was used for incorporation of silicon in CNTs thin films. Energy dispersive X-ray analysis shows that the silicon atomic percentage was varied from 0 % to 6.1 %. The chemical binding energies of carbon and silicon were analyzed from X-ray photoelectron spectroscopy data. The various peaks at ~531 eV, ~ 285 eV, ~155 eV and ~104 eV was observed in the XPS spectra due to the oxygen, carbon and silicon respectively. Surface morphologies of Si-CNTs thin films have been analyzed by field emission scanning electron microscopy, which revels that the length of the silicon incorporated carbon nanotubes ~500 nm and corresponding diameter ~80 nm. The room temperature electrical conductivity was increased whereas the activation energy was decreased with the increase of atomic percentage of silicon in Si-CNTs thin films. The room temperature electrical conductivity was increased from 4.3 × 103 to 7.1 × 104 S cm−1 as the silicon atomic percentage in Si-CNTs thin films increases from 0 to 6.1 % respectively.

Novel Preparation and Characterization of Fe2O3/CNT Thin Films for Flammable Gas Sensors

2019 ◽  
Vol 947 ◽  
pp. 47-51
Author(s):  
Buaworn Chaitongrat ◽  
Sutichai Chaisitsak
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
Dry Process ◽  
Vapor Deposition Technique ◽  
Flammable Gas ◽  
Recovery Times ◽  
Response And Recovery

In this work, novel preparation for Fe2O3/CNT thin films was investigated. The Fe/CNT thin films were synthesized through vertical floating-catalyst chemical vapor deposition technique (FC-CVD) and subsequently annealed in air. The various annealing temperature to create Fe2O3 was examined and characterized by field emission scanning electron microscopy (FE-SEM), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), Ultraviolet–visible spectroscopy (UV-Vis) and Raman spectroscopy. In addition, effect of wet/dry process on gas sensing of Fe2O3/CNTs was also investigated. The results suggest that the interfacial oxide layer helps to significantly improve LPG sensing performance with rapid response and recovery times. The proposed method can be considered as a promising approach for producing ultra-Fe2O3/CNT thin films that are appropriate for sensing application.

scholarly journals Synthesis and Characterization of Highly Crystalline Vertically Aligned WSe2 Nanosheets

2020 ◽  
Vol 10 (3) ◽  
pp. 874 ◽  
Author(s):  
Ayrton Sierra-Castillo ◽  
Emile Haye ◽  
Selene Acosta ◽  
Carla Bittencourt ◽  
J.-F. Colomer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Microscopies ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
Vertically Aligned

Here, we report on the synthesis of tungsten diselenide (WSe2) nanosheets using an atmospheric pressure chemical vapor deposition technique via the rapid selenization of thin tungsten films. The morphology and the structure, as well as the optical properties, of the so-produced material have been studied using electron microscopies, X-ray photoelectron spectroscopy, photoluminescence, UV–visible and Raman spectroscopies, and X-ray diffraction. These studies confirmed the high crystallinity, quality, purity, and orientation of the WSe2 nanosheets, in addition to the unexpected presence of mixed phases, instead of only the most thermodynamically stable 2H phase. The synthesized material might be useful for applications such as gas sensing or for hydrogen evolution reaction catalysis.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

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