scholarly journals Fast Formation of Surface Oxidized Zn Nanorods and Urchin-Like Microclusters

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
R. López ◽  
T. Díaz ◽  
G. García ◽  
E. Rosendo ◽  
R. Galeazzi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Hot Filament

Entangled Zn-ZnO nanorods and urchin-like microstructures were synthesized by the hot filament chemical vapor deposition technique at 825 and 1015°C, respectively. X-ray diffraction results showed a mixture of ZnO and Zn phases in both nanorods and urchin-like structures. The presence of Zn confirms the chemical dissociation of the ZnO solid source. The Z-ZnO nanorods with diameter of about 100 nm showed dispersed-like morphology. The urchin-like structures with micrometer diameters exhibited porous and rough morphology with epitaxial formation of nanorods.

Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

1992 ◽  
Vol 260 ◽  
Author(s):  
P. J. Wang ◽  
Chin-An Chang ◽  
B. S. Meyerson ◽  
J. O. Chu ◽  
M. J. Tejwani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Vapor Deposition Technique ◽  
Superlattice Structures

ABSTRACTReactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe. This is followed by the formation of PtGe around 300 °C. The Pt-Ge reactions are thus similar to those of Pt-Si. The reactions between Pt and SiGe, however, involve a preferential Pt-Si reaction. At 200 °C, for example, while Pt2Ge is normally seen from the Pt/Ge system, only PtzSi is detected from both x-ray diffraction and Rutherford backscattering measurements. At higher temperatures, both the PtGe and PtSi phases form. This preferential Pt-Si reaction is observed in both Pt/SiGe and Pt/Si-SiGe superlattice structures.

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