scholarly journals Near-Infrared All-Silicon Photodetectors

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Iodice ◽  
I. Rendina ◽  
L. Sirleto
Keyword(s):  
Reverse Bias ◽  
Near Infrared ◽  
Free Spectral Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Integrated Devices ◽  
Fabry Perot ◽  
Fabrication And Characterization ◽  
Cavity Effect

We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.

scholarly journals Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3755 ◽  
Author(s):  
Mariano Gioffré ◽  
Giuseppe Coppola ◽  
Mario Iodice ◽  
Maurizio Casalino
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Reverse Bias ◽  
Near Infrared ◽  
Optical Measurements ◽  
Device Performance ◽  
Light Sources ◽  
Monolithically Integrated ◽  
Fabrication And Characterization

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.

scholarly journals Microcavity Silicon Photodetectors at 1.55 μm

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Gioffrè ◽  
M. Iodice ◽  
L. Moretti ◽  
...  
Keyword(s):  
Free Spectral Range ◽  
Resonant Cavity ◽  
Device Fabrication ◽  
Gold Silver ◽  
Fabry Perot ◽  
Working Principle ◽  
Theoretical And Numerical Analysis ◽  
Cavity Effect ◽  
Back Illuminated

The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.

scholarly journals Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

2018 ◽  
Author(s):  
Mariano Gioffrè ◽  
Giuseppe Coppola ◽  
Mario Iodice ◽  
Maurizio Casalino
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Reverse Bias ◽  
Near Infrared ◽  
Optical Measurements ◽  
Device Performance ◽  
Light Sources ◽  
Monolithically Integrated ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

scholarly journals Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

2015 ◽  
Vol 48 (3) ◽  
pp. 655-665 ◽  
Author(s):  
Andrei Benediktovitch ◽  
Alexei Zhylik ◽  
Tatjana Ulyanenkova ◽  
Maksym Myronov ◽  
Alex Ulyanenkov
Keyword(s):  
Dislocation Line ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Silicon And Germanium

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. To analyze the dislocation microstructure of Ge films on Si(011) and Si(111), a set of reciprocal space maps and profiles measured in noncoplanar geometry was collected. To process the data, the approach proposed by Kaganer, Köhler, Schmidbauer, Opitz & Jenichen [Phys. Rev. B, (1997),55, 1793–1810] has been generalized to an arbitrary surface orientation, arbitrary dislocation line direction and noncoplanar measurement scheme.

scholarly journals Dielectrophoretic Immobilization of Yeast Cells Using CMOS Integrated Microfluidics

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 501
Author(s):  
Honeyeh Matbaechi Ettehad ◽  
Pouya Soltani Zarrin ◽  
Ralph Hölzel ◽  
Christian Wenger
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Free Cell ◽  
Blood Analysis ◽  
Oxide Semiconductor ◽  
Yeast Cells ◽  
Label Free ◽  
Viable Cells ◽  
Diagnostic Applications ◽  
Set Up

This paper presents a dielectrophoretic system for the immobilization and separation of live and dead cells. Dielectrophoresis (DEP) is a promising and efficient investigation technique for the development of novel lab-on-a-chip devices, which characterizes cells or particles based on their intrinsic and physical properties. Using this method, specific cells can be isolated from their medium carrier or the mixture of cell suspensions (e.g., separation of viable cells from non-viable cells). Main advantages of this method, which makes it favorable for disease (blood) analysis and diagnostic applications are, the preservation of the cell properties during measurements, label-free cell identification, and low set up cost. In this study, we validated the capability of complementary metal-oxide-semiconductor (CMOS) integrated microfluidic devices for the manipulation and characterization of live and dead yeast cells using dielectrophoretic forces. This approach successfully trapped live yeast cells and purified them from dead cells. Numerical simulations based on a two-layer model for yeast cells flowing in the channel were used to predict the trajectories of the cells with respect to their dielectric properties, varying excitation voltage, and frequency.

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