scholarly journals Microcavity Silicon Photodetectors at 1.55 μm

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Gioffrè ◽  
M. Iodice ◽  
L. Moretti ◽  
...  

The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
M. Casalino ◽  
G. Coppola ◽  
M. Iodice ◽  
I. Rendina ◽  
L. Sirleto

We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures.


2010 ◽  
Vol 29 (2) ◽  
pp. 85-95
Author(s):  
M. Casalino ◽  
L. Sirleto ◽  
L. Moretti ◽  
M. Gioffrè ◽  
G. Coppola ◽  
...  

2019 ◽  
Author(s):  
Kewin Desjardins ◽  
Horia Popescu ◽  
Pascal Mercère ◽  
Claude Menneglier ◽  
Roland Gaudemer ◽  
...  

2020 ◽  
Vol 11 (45) ◽  
pp. 12233-12248
Author(s):  
Haru Hirai ◽  
Shun Ito ◽  
Shinjiro Takano ◽  
Kiichirou Koyasu ◽  
Tatsuya Tsukuda

This perspective summarizes the current status and emerging trends in synthesis and characterization of ligand-protected gold/silver superatoms.


1981 ◽  
Vol 4 ◽  
Author(s):  
Rajiv R. Shah ◽  
Robert Mays ◽  
D. Lloyd Crosthwait

ABSTRACTWe report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.


2012 ◽  
Vol 19 (2) ◽  
pp. 64-70 ◽  
Author(s):  
Hisham Kadhum Hisham ◽  
Ahmad Fauzi Abas ◽  
Ghafour Amouzad Mahdiraji ◽  
Mohd Adzir Mahdi ◽  
Ahmad Shukri Muhammad Noor

2003 ◽  
Author(s):  
Sureshchandra J. Gupta ◽  
Rita A. Gharde ◽  
Anand Tripathi
Keyword(s):  

2018 ◽  
Vol 16 (2) ◽  
pp. 1800153 ◽  
Author(s):  
Sina Mohsenian ◽  
Shyam Sheth ◽  
Saroj Bhatta ◽  
Dassou Nagassou ◽  
Daniel Sullivan ◽  
...  

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