scholarly journals White Light Electroluminescence by Organic-Inorganic Heterostructures with CdSe Quantum Dots as Red Light Emitters

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
Ilker Oner ◽  
Elias Stathatos ◽  
Canan Varlikli
Keyword(s):  
Quantum Dots ◽  
Light Emission ◽  
Red Light ◽  
Conductive Polymer ◽  
Host Material ◽  
Trioctylphosphine Oxide ◽  
Cdse Quantum Dots ◽  
Light Emitters ◽  
Emission Layer ◽  
Light Emitting

We have developed a white organic light-emitting diode featuring a double emission layer comprising a blue light-emitting conductive polymer as a host material for Cadmium Selenide (CdSe) quantum dots as red light emitters and tris-(8-hydroxyquinoline) aluminium thin layer for green light emission. The Commission Internationale de l'Eclairage coordinates of the emitting light of the device were found to be (0.32, 0.40) which were only slightly changed over a range of applied voltages between 5 and 10 volts. The use of CdSe nanocrystalline quantum dots (surface-stabilized with hexadecylamine/trioctylphosphine oxide ligands) in the hybrid heterostructure with poly(9,9-di-n-octylfluorenyl-2,7-diyl) conductive polymer was studied for a variety of CdSe concentrations developing the performance of the device in means of overcoming segregation problems in the blend. Besides, constituents' ratio was further examined for the exploration of possible energy transfer from polymer host material to the CdSe quantum dots as a key factor for well-balanced emission in the electroluminescent devices.

scholarly journals Red Light-Emitting Diodes with All-Inorganic CsPbI3/TOPO Composite Nanowires Color Conversion Films

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Lung-Chien Chen ◽  
Yi-Tsung Chang ◽  
Ching-Ho Tien ◽  
Yu-Chun Yeh ◽  
Zong-Liang Tseng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diode ◽  
Red Light ◽  
Trioctylphosphine Oxide ◽  
Optical And Electrical Properties ◽  
Colloidal Solutions ◽  
High Quality ◽  
Light Emitting ◽  
Hot Injection ◽  
Color Conversion

AbstractThis work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.

scholarly journals Influence of Surface Passivation on Perovskite CsPbBr1.2I1.8 Quantum Dots and Application of High Purity Red Light-Emitting Diodes

2021 ◽  
Author(s):  
Lung-Chien Chen ◽  
Yen-Hung Tien ◽  
Jianjun Tian
Keyword(s):  
Quantum Dots ◽  
Surface Passivation ◽  
Light Emitting Diode ◽  
Red Light ◽  
Lead Nitrate ◽  
Luminous Efficiency ◽  
Trioctylphosphine Oxide ◽  
Light Emitting ◽  
Co Doped

Abstract In this work, trioctylphosphine oxide (TOPO) ligand is employed to improve the quality of CsPbBr1.2I1.8 quantum dots (QDs) films. Lead nitrate (Pb(NO3)2) is also used to passivate the surface of the films. The study of ligand and surface passivation on the luminous efficiency of red light-emitting diode (LED) is discussed. The CsPbBr1.2I1.8 QDs films co-doped with TOPO and Pb(NO3)2 can effectively improve the performance of the CsPbBr1.2I1.8 QDs LEDs due to reduction of non-radiation recombination of the carriers and smooth morphology in the active layer, thus improving the injection and transportation capabilities of carriers. As a result, the highest luminosity and current efficiency are 502.7 cd/m2 and 0.175 cd/A, respectively.

High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

2016 ◽  
Vol 4 (30) ◽  
pp. 7223-7229 ◽  
Author(s):  
Qingli Lin ◽  
Bin Song ◽  
Hongzhe Wang ◽  
Fengjuan Zhang ◽  
Fei Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Core Shell ◽  
Cdse Quantum Dots ◽  
Type Ii ◽  
Light Emitting ◽  
Cdte Core

Highly efficient deep-red light-emitting diodes (LEDs) fabricated by using type-II CdTe/CdSe quantum dots.

Developed one-pot synthesis of dual-color CdSe quantum dots for white light-emitting diode application

2018 ◽  
Vol 6 (12) ◽  
pp. 3089-3096 ◽  
Author(s):  
Sheng Dai ◽  
Cyuan-Bin Siao ◽  
Shu-Ru Chung ◽  
Kuan-Wen Wang ◽  
Xiaoqing Pan
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Light Emitting Diode ◽  
Cdse Quantum Dots ◽  
Cdse Qds ◽  
One Pot ◽  
Synthetic Process ◽  
Light Emitting ◽  
One Pot Synthesis ◽  
Enhanced Stability

The size and fraction of red and green CdSe QDs can be controlled precisely during the synthetic process, thus manifesting remarkably enhanced stability.

Controlling the magic size of white light-emitting CdSe quantum dots

Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10256-10261 ◽  
Author(s):  
Sheng Dai ◽  
Yu-Sheng Su ◽  
Shu-Ru Chung ◽  
Kuan-Wen Wang ◽  
Xiaoqing Pan
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
White Light ◽  
Carbon Chain ◽  
Cdse Quantum Dots ◽  
Light Emitting

By employing a particular non-coordinating solvent and long carbon chain amine, white-light emitting CdSe quantum dots with magic sizes and enhanced quantum yield can be prepared.

Emission layer of F4TCNQ-Doped nanorods for high-efficient red light-emitting diodes

2020 ◽  
Vol 76 ◽  
pp. 105460 ◽  
Author(s):  
Wenjing Zhang ◽  
Qin Zhang ◽  
Hao Sun ◽  
Min Yang ◽  
Fangfang Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Red Light ◽  
Emission Layer ◽  
Light Emitting ◽  
High Efficient

In Situ Ligand Bonding Management of CsPbI 3 Perovskite Quantum Dots Enables High‐Performance Photovoltaics and Red Light‐Emitting Diodes

2020 ◽  
Vol 59 (49) ◽  
pp. 22230-22237 ◽  
Author(s):  
Junwei Shi ◽  
Fangchao Li ◽  
Yan Jin ◽  
Cheng Liu ◽  
Ben Cohen‐Kleinstein ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting ◽  
Perovskite Quantum Dots

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

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