High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

2016 ◽  
Vol 4 (30) ◽  
pp. 7223-7229 ◽  
Author(s):  
Qingli Lin ◽  
Bin Song ◽  
Hongzhe Wang ◽  
Fengjuan Zhang ◽  
Fei Chen ◽  
...  

Highly efficient deep-red light-emitting diodes (LEDs) fabricated by using type-II CdTe/CdSe quantum dots.

2020 ◽  
Vol 28 (5) ◽  
pp. 401-409 ◽  
Author(s):  
Tatsuya Ryowa ◽  
Takeshi Ishida ◽  
Yusuke Sakakibara ◽  
Keisuke Kitano ◽  
Masaya Ueda ◽  
...  

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.


2017 ◽  
Vol 5 (4) ◽  
pp. 953-959 ◽  
Author(s):  
Dan Bi Choi ◽  
Sohee Kim ◽  
Hee Chang Yoon ◽  
Minji Ko ◽  
Heesun Yang ◽  
...  

In this study, we report the creation of heterostructured alloy core/shell Ag-In-Zn-S (AIZS)/ZnS quantum dots (QDs) by sequential core-forming, alloying and shelling processes and the fabrication of color-tunable QD light-emitting diodes (QLEDs) with a standard device architecture.


Nanoscale ◽  
2021 ◽  
Author(s):  
Moonbon Kim ◽  
Nayeon Lee ◽  
JoongHwan Yang ◽  
Chang Wook Han ◽  
Hyun-Min Kim ◽  
...  

We report high-efficiency quantum dot light-emitting diodes (QLEDs) with Li-doped TiO2 nanoparticles (NPs) as an alternative electron transport layer (ETL). Colloidally stable TiO2 NPs are applied as ETLs of the...


2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Wei-Chih Chao ◽  
Tzu-Hsuan Chiang ◽  
Yi-Chun Liu ◽  
Zhi-Xuan Huang ◽  
Chia-Chun Liao ◽  
...  

AbstractThe industrialization of quantum dot light-emitting diodes (QLEDs) requires the use of less hazardous cadmium-free quantum dots, among which ZnSe-based blue and InP-based green and red quantum dots have received considerable attention. In comparison, the development of InP-based green QLEDs is lagging behind. Here, we prepare green InP/ZnSe/ZnS quantum dots with a diameter of 8.6 nm. We then modify the InP quantum dot emitting layer by passivation with various alkyl diamines and zinc halides, which decreases electron mobility and enhances hole transport. This, together with optimizing the electron transport layer, leads to green 545 nm InP QLEDs with a maximum quantum efficiency (EQE) of 16.3% and a current efficiency 57.5 cd/A. EQE approaches the theoretical limit of InP quantum dots, with an emission quantum yield of 86%.


2013 ◽  
Vol 24 (47) ◽  
pp. 475603 ◽  
Author(s):  
Huaibin Shen ◽  
Ying Zheng ◽  
Hongzhe Wang ◽  
Weiwei Xu ◽  
Lei Qian ◽  
...  

Author(s):  
Lishuang Wang ◽  
Ying Lv ◽  
Jie Lin ◽  
Jialong Zhao ◽  
Xingyuan Liu ◽  
...  

For quantum dots light-emitting diodes (QLEDs), typical colloidal quantum dots (QDs) are usually composed of a core/shell heterostructure which is covered with organic ligands as surface passivated materials to confine...


2021 ◽  
Vol 52 (1) ◽  
pp. 953-956
Author(s):  
Tatsuya Ryowa ◽  
Yusuke Sakakibara ◽  
Tadashi Kobashi ◽  
Keisuke Kitano ◽  
Masaya Ueda ◽  
...  

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