scholarly journals Progress on High-Speed 980 nm VCSELs for Short-Reach Optical Interconnects

2011 ◽  
Vol 2011 ◽  
pp. 1-15 ◽  
Author(s):  
Alex Mutig ◽  
Dieter Bimberg

Progress of high-speed vertical cavity surface emitting lasers (VCSEL) operating around 980 nm is reviewed. A special focus is on their applications for future short-reach optical interconnects, for example, in high-performance computers (HPC). The wavelength of 980 nm has fundamental advantages for these applications and plays a significant role in VCSEL research today. The present data rates of 980 nm VCSELs exceed 40 Gbit/s, and excellent temperature stability has been reported. The major concepts leading to these impressive developments are presented.

2019 ◽  
Vol 9 (12) ◽  
pp. 2488 ◽  
Author(s):  
Kanakis ◽  
Iliadis ◽  
Soenen ◽  
Moeneclaey ◽  
Argyris ◽  
...  

The soaring demand for higher speeds in datacenters to address the relentless growth of the global IP traffic places optical interconnects in the spotlight. In this manuscript, we present a high-speed optical transceiver for intra-datacenter connectivity. The transceiver is based on single-mode, single-polarization high-speed vertical-cavity surface-emitting lasers (VCSELs), a VCSEL driver chip, and a linear receiver. Following a step-by-step approach, we present the architectures, assembly processes, and experimental results from the different modules. More specifically, we demonstrate (1) a data transmission experiment at 80 Gb/s using PAM-4 (four-level Pulse Amplitude Modulation) modulation for a reach of up to 500 m by employing a single-mode VCSEL module, and (2) a full-link experiment proving up to 64 Gb/s per lane capacity using PAM-4 signaling of the VCSEL-based optical transceiver test vehicles in back-to-back configuration and up to 56 Gb/s for 500 m and 2 km transmission distances. The acquired experimental results verify the suitability of the optical transceiver for intra-datacenter interconnects’ applications.


1994 ◽  
Vol 05 (04) ◽  
pp. 593-623
Author(s):  
ROBERT A. MORGAN

In this paper we review the state-of-the-art performance of producible, 850 nm, current-guided GaAs/AlGaAs , top-emitting vertical cavity surface emitting lasers (VCSELs). We discuss the motivation and desired characteristics for pursuing VCSELs, particularly in the area of high speed optical data links. We demonstrate that this structure is indeed producible and reproducible using MOVPE, where exceptional uniformity across wafers and arrays is obtained from commercial chambers. Record performance is also reported using MOVPE-grown GaAs VCSELs. These records include submilliamp (0.68 mA) CW room temperature threshold currents, <1.6 V threshold voltages, over 28% total wall-plug efficiency, over 59 mW of (unbonded) power, 200° C lasing, operation over a 100 nm wavelength regime, and other records that rival or exceed those obtained even from strained-layer InGaAs VCSELs of any structure. We also present novel extensions of this base VCSEL platform for lateral mode control, illustrating the flexibility and extendibility of this technology. Finally application of these arrays as 32-channel-wide Opto-Electronic Technology Consortium (OETC) parallel links are shown with error free operations up to 700 Mbits/s (Manchester coded) through 100 m of fiber.


Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4743-4748
Author(s):  
Elham Heidari ◽  
Hamed Dalir ◽  
Moustafa Ahmed ◽  
Volker J. Sorger ◽  
Ray T. Chen

AbstractVertical-cavity surface-emitting lasers (VCSELs) have emerged as a vital approach for realizing energy-efficient and high-speed optical interconnects in the data centers and supercomputers. Indeed, VCSELs are the most suitable mass production lasers in terms of cost-effectiveness and reliability. However, there are still key challenges that prevent achieving modulation speeds beyond 30s GHz. Here, we propose a novel VCSEL design of a hexagonal transverse-coupled-cavity adiabatically coupled through a central cavity. Following this scheme, we show a prototype demonstrating a 3-dB roll-off modulation bandwidth of 45 GHz, which is five times greater than a conventional VCSEL fabricated on the same epiwafer structure. This design harnesses the Vernier effect to increase the laser’s aperture and therefore is capable of maintaining single-mode operation of the laser for high injection currents, hence extending the dynamic roll-off point and offering increases power output. Simultaneously, extending both the laser modulation speed and output power for this heavily deployed class of lasers opens up new opportunities and fields of use ranging from data-comm to sensing, automotive, and photonic artificial intelligence systems.


2018 ◽  
Vol 44 (1) ◽  
pp. 1-16 ◽  
Author(s):  
S. A. Blokhin ◽  
N. A. Maleev ◽  
M. A. Bobrov ◽  
A. G. Kuzmenkov ◽  
A. V. Sakharov ◽  
...  

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