scholarly journals The Influence of Deposition Conditions on Structural Properties of PbI2

2009 ◽  
Vol 2009 ◽  
pp. 1-7 ◽  
Author(s):  
Ali M. Mousa ◽  
Natheer J. Al-rubaie
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Room Temperature ◽  
Dark Conductivity ◽  
Gain Factor ◽  
The Other ◽  
Light Illumination ◽  
Free Carriers ◽  
Deposition Conditions

The effect of deposition environment conditions on the electrical and structural properties of deposited PbI2 layers were studied. The layers were deposited from solution under dark and room light illumination with and without applying magnetic field. XRD, electrical, and photo-electrical properties were measured at room temperature. An increase in the grain size versus the platelet area was noticed.The electrical properties revealed a dependence on deposition conditions. Dark conductivity increases from 1.7×10−10 to 5×10−9 (Ωcm)-1 when deposition was carried out in darkness. A gain factor (the ratio between photoconductivity and dark conductivity) of (23) was obtained. The results indicate that the increase in electrical conductivity is mainly due to the plane 001, where the average number of grain boundaries in this plane sharply decreases when deposition takes place in darkness. On the other hand, the increase in photoconductivity could be due to the decrease in the recombination of free carriers along the grain boundaries.

scholarly journals Investigation of electrical properties of PANI/chalcogenide junctions

2009 ◽  
Vol 7 (4) ◽  
pp. 769-773
Author(s):  
Vinodini Shaktawat ◽  
Dinesh Patidar ◽  
Kananbala Sharma ◽  
Narendra Saxena ◽  
Thansewar. Sharma
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
The Other ◽  
Rectification Ratio ◽  
Rectification Effect ◽  
Conducting Polyaniline ◽  
Evaporation Technique ◽  
Chalcogenide Materials ◽  
Vacuum Evaporation Technique ◽  
Protonic Acids

AbstractPure Polyaniline (EB) and Polyaniline doped with different protonic acids (ESs) were chemically synthesized using ammonium peroxydisulphate (APS) as an oxidant. Junctions have been prepared by evaporating chalcogenide materials (ZnSe, CdSe) on conducting polyaniline (EB & ESs) pellets using a vacuum evaporation technique. I–V characteristics of junctions have been studied at room temperature using the Keithley electrometer 6517A. I–V measurements show the rectification effect. A junction of ES[PO43−] may be preferred over the other junctions due to its low ideality factor and maximum rectification ratio.

Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys

1987 ◽  
Vol 95 ◽  
Author(s):  
S. Aljishi ◽  
D. S. Shen ◽  
V. Chu ◽  
Z E. Smith ◽  
J. P. Conde ◽  
...  
Keyword(s):  
Conduction Band ◽  
Electronic Transport ◽  
Room Temperature ◽  
Dark Conductivity ◽  
Electron Trapping ◽  
Conduction Band Edge ◽  
Band Tail ◽  
Intensity Dependence ◽  
Defect Densities ◽  
Deposition Conditions

AbstractWe have studied the temperature and intensity dependence (130K to 300K) of photo- and dark conductivity in a series of low-gap a-Si,Ge:H,F alloys (Eopt=1.25 to 1.33 eV) prepared under different deposition conditions. Electron time of flight experiments were conducted between 300K and 400K. Results reveal an increase in the slope of the exponential conduction band tail to ∼ 50 meV and a peak in electron trapping states at 0.3 to 0.4 eV below the conduction band edge, leading to a transition from extended to hopping conduction by electrons at slightly below room temperature. The alloys have midgap defect densities in the low 1017 cm−3eV−1 range.

The Role of Niobium in (Ca, Si, Ce, Nb)-Doped TiO2 Varistors

2007 ◽  
Vol 280-283 ◽  
pp. 297-300 ◽  
Author(s):  
Shao Hua Luo ◽  
Zi Long Tang ◽  
Hong Yun Li ◽  
Zhong Tai Zhang ◽  
Xi Zhou Xiong
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Room Temperature ◽  
Structural Characteristics ◽  
Nonlinear Coefficient ◽  
The Other ◽  
Optimal Composition ◽  
Low Loss ◽  
Nb Addition

The present work attempted to investigate the effect of Nb addition on the electrical properties of the (Ca,Si,Ce,Nb)-doped TiO2 ceramics. The content of added niobium is in the range 0.1-1.0mol %, while that of the other additives keeps constant. The results showed that an optimal composition doped with 0.8mol% Nb2O5, followed by sintering at 1350°C, was obtained with low V1 mA of 7.22V, high nonlinear coefficient of 5.76, ultrahigh dielectric constant (er = 86000) as well as relatively low loss (tgd = 0.52) in room temperature at 1 kHz. SEM studies show that change of niobium had significant influence on grain growth and micro structural characteristics of the sintered samples.

Micro Texture Dependence of Both the Mechanical and Electrical Properties of Electroplated Copper Thin Films Used for Interconnection

2010 ◽  
Author(s):  
Naokazu Murata ◽  
Naoki Saito ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Fracture Mode ◽  
The Other ◽  
Copper Films ◽  
Mechanical And Electrical Properties ◽  
Electroplated Copper

Both mechanical and electrical properties of electroplated copper thin films were investigated experimentally with respect to changes in their micro texture. Clear recrystallization was observed after the annealing even at low temperature of about 150°C. The fracture strain of the film annealed at 400°C increased from the initial value of about 3% to 15%, and at the same time, the yield stress of the annealed film decreased from about 270 MPa to 90 MPa. In addition, it was found that there were two fatigue fracture modes in the film annealed at the temperatures lower than 200°C. One was a typical ductile fracture mode with plastic deformation and the other was brittle one. When the brittle fracture occurred, the crack propagated along weak or porous grain boundaries which remained in the film after electroplating. The brittle fracture mode disappeared after the annealing at 400°C. These results clearly indicated that the mechanical properties of electroplated copper thin films vary drastically depending on their micro texture. Next, the electrical reliability of electroplated copper thin film interconnections was discussed. The interconnections used for electromigration (EM) tests were made by damascene process. The width of the interconnections was varied from 1 μm to 10 μm. An abrupt fracture mode due to local fusion appeared in the as-electroplated films within a few hours during the test. Since the fracture rate increased linearly with the increase of square of the applied current density, this fracture mode was dominated by local Joule heating. It seemed that the local resistance of the film increased due to the porous grain boundaries and thus, the local temperature around the porous grain boundaries increased drastically. On the other hand, the life of the interconnections annealed at 400°C was improved significantly. This was because of the increase of the average grain size and the improvement of the quality of grain boundaries in the annealed films. The electrical properties of the electroplated copper films were also dominated by their micro texture. However, the stress migration occurred in the interconnections after the annealing at 400°C. This was because of the high residual tensile stress caused by the constraint of the densification of the films by the surrounding oxide film in the interconnection structures during the annealing. Finally, electroplating condition was controlled to improve the electrical properties. Both the resistance of electromigration and electrical resistivity were improved significantly. However, electromigration of copper atoms still occurred at the interface between the electroplated copper and the thin tantalum (Ta) layer sputtered as base material. Therefore, it is very important to control the crystallographic quality of electroplated copper films and the interface between different materials for improving the reliability of thin film interconnections.

The crystallography and nucleation of pearlite

1973 ◽  
Vol 333 (1595) ◽  
pp. 455-467 ◽  
Keyword(s):  
Electron Microscopy ◽  
Grain Boundaries ◽  
Room Temperature ◽  
Thin Foil ◽  
The Other ◽  
Morphological Aspects ◽  
Austenite Grain ◽  
Orientation Relations ◽  
Iron Manganese ◽  
Thin Foil Electron

By choice of a suitable iron—manganese—carbon alloy it has been possible to study pearlite nodules growing in austenite, without the austenite transforming on cooling to room temperature. Thin foil electron microscopy has been used to examine the orientation relations between cementite, ferrite and austenite as well as morphological aspects of the transformation. It is shown that one of the classical ferrite—cementite orientation relations found in pearlite (Pitsch—Petch) arises when the pearlite colonies nucleate on ‘clean’ austenite grain boundaries. The other familiar relation (Bagaryatski) arises when the colonies nucleate on pre-existing hyper-eutectoid cementite layers at the austenite grain boundaries. Some observations are made on the mode of nucleation of the pearlite nodules.

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Harmful Effect ◽  
Stacking Faults ◽  
Optical Microscope ◽  
Stacking Fault ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Room Temperature Photoluminescence

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.

DEPENDENCE OF THE OPTICAL AND ELECTRICAL PROPERTIES OF CHEMICALLY ANNEALED VACUUM-DEPOSITED a-Si:H FILMS ON THE DEPOSITION RATE

2012 ◽  
Vol 27 (02) ◽  
pp. 1350015
Author(s):  
AHMED M. EL-NAGGAR
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Room Temperature ◽  
Energy Gap ◽  
Dark Conductivity ◽  
Optical Parameters ◽  
Optical And Electrical Properties ◽  
Optical Energy Gap ◽  
Optical Energy

The influence of the deposition rate of chemically annealed vacuum-deposited a-Si : H films on its optical and electrical properties was studied. The optical parameters were studied using spectrophotometric measurements of the film transmittance in the wavelength range 200–3000 nm. It was found that with increasing the silicon deposition rate from 0.09 to 0.23 nm/s, the refractive index, n, decreases from 3.78 to 3.45 at 1.5 μm, and the optical energy gap, Eg, decreases from 1.74 to 1.66 eV, while the Urbach parameter, ΔE, increases from 77 to 99 meV. The dark conductivity was measured at temperatures descending from 480 to 170 K. It was found that the room temperature dark conductivity values decreased from 1.11 × 10-6 (Ω⋅ cm )-1 to 2.08 × 10-10 (Ω⋅ cm )-1 with increasing the deposition rate from 0.09 to 0.23 nm/s respectively, while the activation energy Ea increased from 0.53 to 0.84 eV with increasing deposition rate. As a result, a good quality a-Si : H film with optical energy gap of 1.74 eV, Urbach parameter of 77 meV, dark conductivity of 1.11 × 10-6 (Ω⋅ cm )-1, and activation energy of 0.53 eV was successfully prepared at a low deposition rate of 0.09 nm/s.

Mechanical and Electrical Properties of Electroplated Copper Thin Films Used for Thin Film Interconnection

2010 ◽  
Vol 1249 ◽  
Author(s):  
Murata Naokazu ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
The Other ◽  
Mechanical And Electrical Properties ◽  
Average Grain Size ◽  
Columnar Grains ◽  
Electroplated Copper ◽  
Electrical Reliability

AbstractMicro-texture dependence of both the mechanical and electrical properties of electroplated copper thin films was discussed experimentally considering the change of their micro texture caused by thermal history after the electroplating. Both the static and fatigue strength of the films changed drastically depending on the micro texture and it was found that there were two fatigue fracture modes in the films. One was a typical ductile intragranular fracture and the other was brittle intergranular one. The reason for the variation of the strength of the electroplated copper thin films was attributed to the variation of the average grain size and the characteristics of grain boundaries. In addition, the electrical reliability of the electroplated copper interconnections was discussed under electromigration tests. Though abrupt fracture mode due to the local fusion appeared in the as-electroplated films, the life of the interconnections was improved significantly after the annealing at temperatures high than 200°C. Typical change of the surface morphology of the film, i.e., the formation of voids and hillocks were observed on their surfaces after the annealing. This was also caused by the change of the micro texture from fine grains with porous grain boundaries to coarsened columnar grains with rigid grain boundaries. However, the stress-induced migration appeared in the annealed narrow interconnections, in particular. This was because of high tensile residual stress occurred in the film due to the constraint of the shrinkage of the films by rigid oxide around them. These results clearly indicated that the control of both the micro-texture and residual stress is indispensable for improving the reliability of the interconnectins.

Structural Properties of 300 Å of Iron Films Grown on Polycrystalline Substrate

2019 ◽  
Vol 397 ◽  
pp. 69-75
Author(s):  
Radhia Boukhalfa ◽  
Hichem Farh
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
Diffraction Method ◽  
The Other ◽  
X Ray Diffraction ◽  
Iron Films ◽  
X Ray ◽  
Polycrystalline Substrate

In this manuscript, the structural properties such as the distance inter-reticular of samples is studied, In the fact, four samples were used symbolized as follows: E tAg(Å), the only difference is the thickness of the Silver buffer layer (tAg= 0, 50, 100 and 150 Å) to find out how the thickness of this layer depends on the structural characteristics of the Iron thin layer, all samples are deposited using molecular beam epitaxy (MBE) at room temperature onto Si (100) substrate. The structural properties of all samples examined using X-ray diffraction method at small and high angles. The small angles X-Ray diffraction curves confirmed to us that there is a clear difference between the surface structure of the samples by varying the number of Kiessig Fringes, Also high angles X-Ray diffraction curves assured us this difference through the clear variation in the angular positions of the peaks of Bragg and the distances inter-reticular values from a sample to the other.

scholarly journals Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 207-212 ◽  
Author(s):  
Ana Amaral ◽  
G. Lavareda ◽  
C. Nunes de Carvalho ◽  
V. André ◽  
Yuri Vygranenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Chemical Reactivity ◽  
X Ray ◽  
Ito Thin Films ◽  
Deposition Conditions

ABSTRACTIndium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Bé) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.

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