scholarly journals Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 207-212 ◽  
Author(s):  
Ana Amaral ◽  
G. Lavareda ◽  
C. Nunes de Carvalho ◽  
V. André ◽  
Yuri Vygranenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Chemical Reactivity ◽  
X Ray ◽  
Ito Thin Films ◽  
Deposition Conditions

ABSTRACTIndium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Bé) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.

scholarly journals Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

2019 ◽  
Vol 10 ◽  
pp. 1511-1522 ◽  
Author(s):  
Petronela Prepelita ◽  
Ionel Stavarache ◽  
Doina Craciun ◽  
Florin Garoi ◽  
Catalin Negrila ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films ◽  
Ito Films

In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

scholarly journals Intrinsic and Extrinsic Ferromagnetism in Co-Doped Indium Tin Oxide Revealed Using X-Ray Magnetic Circular Dichroism

2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
A. M. H. R. Hakimi ◽  
F. Schoofs ◽  
M. G. Blamire ◽  
S. Langridge ◽  
S. S. Dhesi
Keyword(s):  
Thin Films ◽  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Magnetic Circular Dichroism ◽  
Cluster Formation ◽  
X Ray ◽  
Ito Thin Films ◽  
Circular Dichroïsm ◽  
Co Doped

The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO) thin films have been investigated using X-ray diffraction (XRD), magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD). Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

Structural Properties of Zn-PbI2 Nanostructures

2014 ◽  
Vol 925 ◽  
pp. 164-168 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Y. Al-Douri
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
X Ray ◽  
Chemical Technique ◽  
Evaporation Technique ◽  
Scanning Electron

The structural properties of Zn-doped and undoped lead iodide ( PbI2 ) nanostructures have been investigated. Zn-doped and undoped of ( PbI2 ) have been grown by chemical technique. Different doped and undoped PbI2 when prepared successfully by thermal evaporation technique an glass substrate at room temperature. Characterization and analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) have indicated to the crystalline character. The particle size of Zn-PbI2 is larger than undoped PbI2.

Preparation and Properties Indium Tin-Oxide Thin Films by RF Sputtered for Photodetectors

2008 ◽  
Vol 55-57 ◽  
pp. 769-772 ◽  
Author(s):  
I Srithanachai ◽  
K. Nutaman ◽  
A. Rerkratn ◽  
S. Niemcharoen ◽  
S. Supadech
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Electrical Characteristic ◽  
Rf Sputtering ◽  
Transparent Electrode ◽  
Glass Slide ◽  
X Ray ◽  
High Crystallization

This paper descript studying and preparation indium-tin oxide (ITO) thin film from method 90 wt.% In2O3 and 10 wt.% SnO2 formula target with 99.99% purity on glass slide by RF reactive sputtering method at room temperature. This paper, sputtering time 5, 15, 30 and 60 mins. Thin films ITO were measured crystallization, optical and electrical characteristic by an X-ray diffractometer (XRD), scan electron microscopy (SEM) , Four Point Probe and UV-VIS spectrophotometry. The results found that thin films which made from RF sputtering method had a high crystallization, order arrangement grain. Strong peak of XRD (400) and (441), low resistivity are 2.2 x 10-3, 4.4 x 10-3, 1 x 10-3 and 7 x 10-4 Ω-cm, transmittance are 82%, 84%, 87% and 89%, respectively. The overall experimental results identify that fabricated thin films ITO have good properties and is suitable for transparent electrode application. The ultimate goal is developing schottky photodetector.

scholarly journals Effect of thickness on structural properties of BixSb2-xTe3 thin films

2019 ◽  
Vol 17 (41) ◽  
pp. 15-28
Author(s):  
Hussain. M. Selman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Average Surface Roughness ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Thickness

BixSb2-xTe3 alloys with different ratios of Bi (x=0, 0.1, 0.3, 0.5, and 2) have been prepared, Thin films of these alloys were prepared using thermal evaporation method under vacuum of 10-5 Torr on glass substrates at room temperature with different deposition rate (0.16, 0.5, 0.83) nm/sec for thickness (100, 300, 500) respectively. The X–ray diffraction measurements for BixSb2-xTe3 bulk and thin films indicate the polycrystalline structure with a strong intensity of peak of plane (015) preferred orientation with additional peaks, (0015) and (1010 ) reflections planes, which is meaning that all films present a very good texture along the (015) plane axis at different intensities for each thin film for different thickness. AFM measurements for the thin films of BixSb2-xTe3, show that the grain size and the average surface roughness decreases with increasing of the percentage Bi for different thickness.

scholarly journals Effect of substrate on the electro chromic properties of tungsten trioxide thin films

2014 ◽  
Vol 3 (2) ◽  
pp. 245 ◽  
Author(s):  
Vidya Prabhakar ◽  
Ashrit P
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Tungsten Trioxide ◽  
Thermal Evaporation ◽  
Peak Efficiency ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Infrared Wavelengths ◽  
Wo3 Thin Films ◽  
Deposition Conditions

Thin films of tungsten trioxide (WO3) were deposited onto glass and Indium Tin Oxide (ITO) coated glass substrates using thermal evaporation technique under various deposition conditions. In the present work the effect of substrate on the structure and EC performance of WO3 thin films has been examined using a dry lithiation method. The structural and optical changes occurring in these films with lithium insertion have been studied. It is found that the ITO coated substrate promotes the granulation and higher coloration efficiencies of the films. The peak efficiency is observed at higher infrared wavelengths where it is principally the reflectance modulation that brings about optical changes. Keywords: WO3 Thin Films, Electrochromism, Optical and Structural Properties, Effect of ITO Substrate.

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