scholarly journals A Q-Enhanced 3.6 GHz, Tunable, Sixth-Order Bandpass Filter Using 0.18 μm CMOS

VLSI Design ◽  
2007 ◽  
Vol 2007 ◽  
pp. 1-9 ◽  
Author(s):  
Anh Dinh ◽  
Jiandong Ge
Keyword(s):  
High Performance ◽  
Bandpass Filter ◽  
Sixth Order ◽  
Center Frequency ◽  
Voltage Gain ◽  
Image Rejection ◽  
Three Stages ◽  
On Chip ◽  
Tuning Frequency ◽  
Tuning Scheme

An experimental filter was designed to operate at 3.6 GHz using mainstream 0.18 μm CMOS. In the design, the Q-enhancement technique was used to overcome the low-Q characteristics of the CMOS on-chip inductors. A sixth-order bandpass filter with a wide passband and a high image rejection was built by cascading three stages of second-order Q-enhanced filters. A combination of three biquads with offset in center frequency provides wider tuning frequency and bandwidth. This high-performance filter provides a 340 MHz tunable center frequency around 3.6 GHz, an image rejection of 50 dB and a tunable Q from 25 to 50 for a bandwidth adjustment from 95 MHz to 35   MHz. The filter achieves an 18 dB voltage gain while consuming 130 mW of power at 1.8 V DC supply. The chip occupies an area of 900×900μm2 including all the required bonding pads. The design provides a simple architecture to simplify tuning scheme for both frequency and bandwidth for practical use. The tunable ability of the design could be exploited in further study to be used as a channel-select filter in the gigahertz range.

scholarly journals Chebyshev Bandpass Filter Using Resonator of Tunable Active Capacitor and Inductor

VLSI Design ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-12 ◽  
Author(s):  
Yu Wang ◽  
Jian Chen ◽  
Chien-In Henry Chen
Keyword(s):  
Bandpass Filter ◽  
Low Cost ◽  
Center Frequency ◽  
Pass Band ◽  
Cmos Process ◽  
Frequency Range ◽  
Active Components ◽  
Fully Integrated ◽  
Nanometer Cmos ◽  
Tuning Frequency

A classic second-order coupled-capacitor Chebyshev bandpass filter using resonator of tunable active capacitor and inductor is presented. The low cost and small size of CMOS active components make the bandpass filter (BPF) attractive in fully integrated CMOS applications. The tunable active capacitor is designed to compensate active inductor’s resistance for resistive match in the resonator. In many design cases, more than 95% resistive loss is cancelled. Meanwhile, adjusting design parameter of the active component provides BPF tunability in center frequency, pass band, and pass band gain. Designed in 1.8 V 180 nanometer CMOS process, the BPF has a tuning frequency range of 758–864 MHz, a controllable pass band of 7.1–65.9 MHz, a quality factor Q of 12–107, a pass band gain of 6.5–18.1 dB, and a stopband rejection of 38–50 dB.

scholarly journals Fabrication of Compact Microstrip Line-Based Balun-Bandpass Filter with High Common-Mode Suppression

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Chia-Mao Chen ◽  
Shoou-Jinn Chang ◽  
Yen-Liang Pan ◽  
Cheng-Yi Chen ◽  
Cheng-Fu Yang
Keyword(s):  
High Performance ◽  
Bandpass Filter ◽  
Open Loop ◽  
Ring Resonators ◽  
Center Frequency ◽  
Coupled Line ◽  
Common Mode ◽  
New Device ◽  
Line Theory ◽  
Loop Ring

A new type of balun-bandpass filter was proposed based on the traditional coupled-line theory and folded open-loop ring resonators (OLRRs) configuration. For that, a new device with both filter-type and balun-type characteristics was investigated and fabricated. Both magnetic and electric coupling structures were implemented to provide high performance balun-bandpass responses. The fabricated balun-bandpass filters had a wide bandwidth more than 200 MHz and a low insertion loss less than 2.51 dB at a center frequency of 2.6 GHz. The differences between the two outputs were below 0.4 dB in magnitude and within 180 ± 7° in phase. Also, the balun-bandpass filter presented an excellent common-mode rejection ratio over 25 dB in the passband. An advanced design methodology had been adopted based on EM simulation for making these designed parameters of OLRRs, microstrip lines, and open stubs. The measured frequency responses agreed well with simulated ones.

A VERY LOW POWER BANDPASS FILTER FOR LOW-IF APPLICATIONS

2008 ◽  
Vol 17 (04) ◽  
pp. 685-701 ◽  
Author(s):  
Gh. ZAREH FATIN ◽  
Z. D. KOOZEH KANANI
Keyword(s):  
Bandpass Filter ◽  
Dynamic Range ◽  
Second Order ◽  
Center Frequency ◽  
Cmos Process ◽  
Considerable Saving ◽  
Biquad Filter ◽  
External Reference ◽  
On Chip ◽  
Order Structures

This paper presents a second-order bandpass filter for IF frequencies in the range of 500 kHz–2 MHz. By using a single Gm–cell as a biquad filter, considerable saving in area and power is feasible. Higher order structures can be achieved by cascading this second-order block. This Gm-C filter achieves a dynamic range of 37 dB for 1% IM3 in Bluetooth while dissipating only 10.5 mW from 3.3 power supply in 0.35 μm CMOS process. The on-chip indirect automatic tuning circuit sets the filter center frequency to an external reference clock.

scholarly journals Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1932
Author(s):  
Jian Chen ◽  
Zhi-Ji Wang ◽  
Bao-Hua Zhu ◽  
Eun-Seong Kim ◽  
Nam-Young Kim
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Return Loss ◽  
Satellite Communication ◽  
Bandpass Filter ◽  
Physical Structure ◽  
Center Frequency ◽  
Fractional Bandwidth ◽  
Bridge Structures ◽  
Chip Size

This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ0 (0.8 × 0.8 mm2) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance.

scholarly journals 60-GHz Half-Mode Substrate-Integrated Waveguide Bandpass Filter in 0.15-μm GaAs Technology

2021 ◽  
Vol 9 ◽  
Author(s):  
Xu-Juan Liu ◽  
Wen Wu ◽  
Kai-Da Xu ◽  
Ying-Jiang Guo ◽  
Qiang Chen
Keyword(s):  
Gallium Arsenide ◽  
Insertion Loss ◽  
Bandpass Filter ◽  
Center Frequency ◽  
Substrate Integrated Waveguide ◽  
60 Ghz ◽  
On Chip ◽  
Good Agreement

A compact 60-GHz on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The miniaturization is achieved by the half-mode substrate-integrated waveguide (HMSIW) structure. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a center frequency at 58.6 GHz with a bandwidth of 17.9%, and the minimum insertion loss within the passband is 1.2 dB. The chip, excluding the feedings, is only about 0.38λg × 0.58λg, where λg is the guided wavelength at the center frequency.

scholarly journals Design of a Suspended Stripline Narrow Bandpass Filter with Ultrawideband Harmonic Suppression

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Ju Seong Park ◽  
Wahab Mohyuddin ◽  
Hyun Chul Choi ◽  
Kang Wook Kim
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Bandpass Filter ◽  
Design Method ◽  
Characteristic Impedance ◽  
Wireless Systems ◽  
Bandpass Filters ◽  
Center Frequency ◽  
Harmonic Suppression ◽  
Low Loss

A design method of narrow bandpass filters (NBPFs) of 4–6% bandwidth with ultrawideband suppression of harmonic passbands, utilizing two cascaded step impedance resonators (SIRs) in a suspended stripline, is proposed in this paper. The proposed design utilized the characteristics of a suspended stripline, which provides a much higher characteristic impedance ratio as compared with that of the microstripline, enabling ultrawideband harmonic suppression. As an example of the NBPF, a filter with a passband center frequency f0 of 0.75 GHz and bandwidth of 5% was implemented and proved to suppress the harmonic passbands up to 13.5 f0. Since the proposed filter was implemented on the suspended stripline, the passband insertion loss was only −0.9 dB, which is low as compared with other previous designs. The proposed filter is a compact high-performance low-loss NBPF, which can be applicable to various wireless systems.

scholarly journals A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 73 ◽  
Author(s):  
Chun-He Quan ◽  
Zhi-Ji Wang ◽  
Jong-Chul Lee ◽  
Eun-Seong Kim ◽  
Nam-Young Kim
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
High Selectivity ◽  
Bandpass Filter ◽  
Signal Propagation ◽  
Center Frequency ◽  
Spiral Inductor ◽  
Passive Device ◽  
Compact Size ◽  
Embedded Capacitor

As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λg × 0.013 λg with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results.

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