scholarly journals Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1932
Author(s):  
Jian Chen ◽  
Zhi-Ji Wang ◽  
Bao-Hua Zhu ◽  
Eun-Seong Kim ◽  
Nam-Young Kim
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
Return Loss ◽  
Satellite Communication ◽  
Bandpass Filter ◽  
Physical Structure ◽  
Center Frequency ◽  
Fractional Bandwidth ◽  
Bridge Structures ◽  
Chip Size

This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ0 (0.8 × 0.8 mm2) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance.

scholarly journals Miniaturized Bandpass Filter Using a Meandered Stepped-Impedance Resonator with a Meandered-Line Stub-Load on a GaAs Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Z. Chuluunbaatar ◽  
C. Wang ◽  
N. Y. Kim
Keyword(s):  
Insertion Loss ◽  
Gaas Substrate ◽  
Return Loss ◽  
Bandpass Filter ◽  
Device Fabrication ◽  
Capacitive Coupling ◽  
Center Frequency ◽  
Fabrication Technology ◽  
Passive Device ◽  
Stepped Impedance Resonator

This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

scholarly journals A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 463 ◽  
Author(s):  
Zhi-Ji Wang ◽  
Eun-Seong Kim ◽  
Jun-Ge Liang ◽  
Tian Qiang ◽  
Nam-Young Kim
Keyword(s):  
Return Loss ◽  
Bandpass Filter ◽  
Spiral Inductor ◽  
Chip Area ◽  
Passive Device ◽  
Quality Signals ◽  
Bridge Structures ◽  
Chip Size ◽  
The Right ◽  
Device Technology

This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capacitor. Air-bridge structures were introduced to the outer inductor and inner capacitor for the purpose of space-saving, thereby yielding a filter with an overall chip area of 1178 μm × 970 μm. Thus, not only is the chip area minimized, but the magnitude of return loss is also improved as a result of selective variation of bridge capacitance. The proposed device possesses a single passband with a central frequency of 1.71 GHz (return loss: 32.1 dB), and a wide fractional bandwidth (FBW) of 66.63% (insertion loss: 0.50 dB). One transmission zero with an amplitude of 43.42 dB was obtained on the right side of the passband at 4.48 GHz. Owing to its miniaturized chip size, wide FBW, good out-band suppression, and ability to yield high-quality signals, the fabricated bandpass filter can be implemented in various L-band applications such as mobile services, satellite navigation, telecommunications, and aircraft surveillance.

A New Compact Dual-Band Filter Using SIR

2012 ◽  
Vol 424-425 ◽  
pp. 573-576
Author(s):  
Jin Ping Hu ◽  
Guo Hui Li ◽  
Wei Dong Fang ◽  
Wei Zhang ◽  
Hai Ping Hu
Keyword(s):  
High Performance ◽  
Return Loss ◽  
Bandpass Filter ◽  
Dual Band ◽  
Fractional Bandwidth ◽  
Theoretical Simulation ◽  
Band Filter ◽  
Compact Size ◽  
Measurement Results ◽  
Simulation Results

A narrowband dual-band bandpass filter based on step impedance resonator (SIR) is proposed in this paper to realize high performance with a compact size. The center frequencies of the designed filter are 2.4 and 5.8GHz, where it is suitable for wireless communication system. The absolute bandwidth approaches 200MHz with 8.3% fractional bandwidth at -3dB, and the simulations show that the return loss of the first and the second band is lower than -20dB. Between the two passbands, there is a transmission zero which can achieve a high out-band isolation. For demonstration, the filter has been fabricated and the measurement results show the excellent agreement with the theoretical simulation results

Compact microstrip bandpass filter using dual closed-loop stepped impedance resonator

2018 ◽  
Vol 10 (4) ◽  
pp. 405-411 ◽  
Author(s):  
Salif N. Dembele ◽  
Ting Zhang ◽  
Jingfu Bao ◽  
Denis Bukuru
Keyword(s):  
Circuit Design ◽  
Return Loss ◽  
Closed Loop ◽  
Bandpass Filter ◽  
Center Frequency ◽  
Fractional Bandwidth ◽  
Transmission Zeros ◽  
Measurement Results ◽  
Frequency Position ◽  
Stepped Impedance Resonator

AbstractA dual closed-loop stepped impedance resonator (DCLSIR) is investigated and used in designing a compact microstrip bandpass filter (BPF). The proposed DCLSIR is symmetrical; as a result, the symmetric characteristics of the resonator have been used. The design equations are derived and used to support the circuit design. The center frequency, position of transmission zeros, and fractional bandwidth (FBW) are easily tuned by changing the physical dimensions of the resonator. Three transmission zeros are generated to improve the performance in the upper stopband. A DCLSIR prototype BPF is fabricated with a center frequency of 9.3 GHz, and evaluated to validate the design concept. The measured FBW is 9.25%, the insertion loss is 1.58 dB, and the return loss is over 17 dB. The measurement results agree well with the simulation results.

scholarly journals A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 73 ◽  
Author(s):  
Chun-He Quan ◽  
Zhi-Ji Wang ◽  
Jong-Chul Lee ◽  
Eun-Seong Kim ◽  
Nam-Young Kim
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
High Selectivity ◽  
Bandpass Filter ◽  
Signal Propagation ◽  
Center Frequency ◽  
Spiral Inductor ◽  
Passive Device ◽  
Compact Size ◽  
Embedded Capacitor

As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λg × 0.013 λg with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results.

scholarly journals Sharp Skirt Dual-Mode Bandpass Filter with Overlay Plate to Control Upper Passband Edge

2019 ◽  
Vol 8 (6) ◽  
pp. 2357-2360
Keyword(s):  
Analytical Model ◽  
Insertion Loss ◽  
Return Loss ◽  
Bandpass Filter ◽  
Center Frequency ◽  
Dual Mode ◽  
Rf Receivers ◽  
Attenuation Level ◽  
Frequency Selective ◽  
Fixed Center

This paper presents design and analytical model for Sharp Skirt Dual-Mode Bandpass Filter for RF receivers. Proposed filter is designed using open stub loaded H shaped resonator. Based on analytical model insertion loss S21 and return loss S11 for proposed filter are demonstrated. Inductive Overlaying plate is proposed to control upper passband edge of proposed filter to improve frequency selectivity with fixed center frequency. The proposed filter has sharp frequency selective range from 5.1GHz to 9.2GHz. With overlay plate, frequency selective range is tuned to 5.1GHz-8.6GHz. Without overlaying plate the proposed filter has return loss greater than 10dB and insertion loss of 0.7dB. Lower and upper passband edges are at 5.1GHz and 9.2GHz with attenuation level of 52dB and 54dB respectively. With overlaying plate, the filter has same S 11 and S 21 parameters, but upper passband edge is shifted from 9.2GHz to 8.6GHz

Miniaturized Wideband Bandpass Filter based on Capacitor-loaded One-eighth Wavelength Coupled Line

2021 ◽  
Vol 36 (7) ◽  
pp. 865-871
Author(s):  
Jin Shi ◽  
Jiancheng Dong ◽  
Kai Xu ◽  
Lingyan Zhang
Keyword(s):  
Insertion Loss ◽  
Simple Structure ◽  
Bandpass Filter ◽  
State Of The Art ◽  
Center Frequency ◽  
Fractional Bandwidth ◽  
Coupled Line ◽  
Transmission Zeros ◽  
Compact Size ◽  
Multiple Transmission

A novel miniaturized wideband bandpass filter (BPF) using capacitor-loaded microstrip coupled line is proposed. The capacitors are loaded in parallel and series to the coupled line, which makes the filter just require one one-eighth wavelength coupled line and achieve filtering response with multiple transmission poles (TPs) and transmission zeros (TZs). Compared with the state-of-the-art microstrip wideband BPFs, the proposed filter has the advantages of compact size and simple structure. A prototype centered at 1.47 GHz with the 3-dB fractional bandwidth of 86.5% is demonstrated, which exhibits the compact size of 0.003λ2 g (λg is the guided wavelength at the center frequency) and the minimum insertion loss of 0.37 dB.

A Low Loss Fully Embedded Stripline Parallel Coupled BPF for Applications using the 60 GHz Band

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000050-000053
Author(s):  
Alexander Schulz ◽  
Sven Rentsch ◽  
Lei Xia ◽  
Robert Mueller ◽  
Jens Mueller
Keyword(s):  
Return Loss ◽  
Bandpass Filter ◽  
Coplanar Waveguide ◽  
Center Frequency ◽  
60 Ghz ◽  
Low Loss ◽  
Wireless Applications ◽  
High Data ◽  
V Band ◽  
Waveguide Transmission

This paper presents a low loss fully embedded bandpass filter (BPF) using low temperature co-fired ceramic (LTCC) for multilayer System-in-Package (SiP) and Multi-Chip-Module (MCM) applications, e.g. wireless applications for the unlicensed 60 GHz band. The measured insertion loss was 1.5 dB at the center frequency 58 GHz, and a return loss of less than −10 dB was achieved, including two grounded coplanar waveguide transmission line (CPWg) to stripline transitions. The four layers BPF has a 3 dB bandwidth of about 11 GHz which supplies e.g. broadband and high data rate applications. The whole BPF requires a substrate area of 5.6 × 2.1 × 0.42 mm3 with transitions and a shielding via fence. This BPF suits well for V-band applications in a LTCC package because of the compact dimensions and the good performance.

scholarly journals A New Ultracompact Narrow Bandpass Microstrip Filter Using Double-Negative Quasiplanar Cells

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Mohammad Reza Khawary ◽  
Vahid Nayyeri ◽  
Seyed Mohammad Hashemi ◽  
Mohammad Soleimani
Keyword(s):  
Printed Circuit Board ◽  
High Selectivity ◽  
Bandpass Filter ◽  
Circuit Board ◽  
Center Frequency ◽  
Double Negative ◽  
Fractional Bandwidth ◽  
Printed Circuit ◽  
Full Wave ◽  
Good Agreement

This paper presents a novel ultracompact narrow bandpass filter with high selectivity. The proposed filter is composed of cascading two basic cells. Each cell is basically a microstrip line loaded with a quasiplanar resonator and series gaps which can be fabricated using a standard multilayer printed circuit board technology. The structure is analyzed through an equivalent circuit and full-wave simulations. The simulation results are compared with experimental measurements demonstrating a good agreement between them. The measurement indicates that the realized bandpass filter at the center frequency of 1 GHz has a fractional bandwidth of 2.2%. Most importantly, in comparison with other similar recent works, it is shown that the proposed filter has the smallest size.

GaAs MMIC Wideband SP8T Switch

2014 ◽  
Vol 599-601 ◽  
pp. 1527-1530
Author(s):  
Cheng Peng Liu ◽  
Guo Qiang Wang
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Return Loss ◽  
Chip Size ◽  
Off Time

this paper mainly introduces a GaAs MMIC Wideband SP8T Switch. Firstly, every possible configuration is contrasted, the theories of basic GaAs switch configurations are mentioned. Secondly, the theories of basic GaAs switch configurations are mentioned. Subsequently, appropriate topology is selected for this SP8T switch. This switch has been realized by 0.5µm GaAs pHEMT process. this switch exhibits high performance: over DC~2.5GHz, insertion loss is lower than 1.27dB; The isolation is lower than 30dB; the ripple variation of insertion loss is less than ±0.1dB; input return loss is lower than 22dB; on state, output return loss is lower than 18dB; off state, over 0.2GHz-2.5GHz, output return loss is lower than 10dB; on and off time are less than 75ns. The layout of the switch with a chip size is 1.11 mm×1.51mm.

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