scholarly journals Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yN Quantum Structures

2007 ◽  
Vol 2007 ◽  
pp. 1-6 ◽  
Author(s):  
A. Gröning ◽  
V. Pérez-Solórzano ◽  
M. Jetter ◽  
H. Schweizer
Keyword(s):  
Growth Parameters ◽  
Growth Conditions ◽  
Localized States ◽  
Time Resolved ◽  
Organic Vapor ◽  
Growth Interruption ◽  
Metal Organic ◽  
Low Dimensional ◽  
Time Resolved Photoluminescence ◽  
State Filling

The optical properties of metal-organic vapor phase epitaxy grown AlyInxGa1−x−yN quantum dot structures have been studied by time-resolved photoluminescence experiments. We investigated the recombination dynamics of the photo-exited carriers in dependence of the growth parameters such as aluminium flow and the duration of the growth interruption after the dot deposition. Our results confirm the presence of localized states, where the degree of localization is strongly dependent on the growth conditions. To describe this behavior, we propose a band structure with coupled potentials for these nanostructures. Finally, we demonstrate state filling to prove the zero-dimensional character of the strongly localized states in our quaternary quantum dots.

The Formation of Radiative Defects at GaAs/GaInP Interface

1995 ◽  
Vol 417 ◽  
Author(s):  
Kazuo Uchida ◽  
Takayuki Arai ◽  
Koh Matsumoto
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Time Resolved ◽  
Organic Vapor ◽  
Spatially Distributed ◽  
Electron Hole Pair ◽  
Metal Organic ◽  
Related Defect ◽  
Time Resolved Photoluminescence

AbstractWe report the optical characteristics of 100 A˚ thick GaAs/Ga0.521n0.48P single quantum wells grown by Metal Organic Vapor Phase Epitaxy. We have confirmed from the 77 K photoluminescence (PL) that an optimum growth sequence is necessary to achieve the emission from the well (1.52 eV), otherwise only the deep emission band (1.46 eV) is observed. From the time-resolved photoluminescence and temperature dependent PL measurements, we assign that this 1.46 eV deep emission is a recombination of electron-hole pair in a vacancy-related defect which is spatially distributed at the imperfect GaAs/Ga 0.521n0.48P interface.

Mathematical Modeling of Growth Conditions and Interpretation of Phase Diagram for InxGa1-xN Epitaxial Layer

2013 ◽  
Vol 372 ◽  
pp. 70-74 ◽  
Author(s):  
Md. Soyaeb Hasan ◽  
Apurba Kumar Saha ◽  
Md. Rafiqul Islam ◽  
Nowshad Amin
Keyword(s):  
Mathematical Modeling ◽  
Phase Diagram ◽  
Gas Flow ◽  
Epitaxial Film ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Indium Content ◽  
Molar Ratio ◽  
Organic Vapor ◽  
Metal Organic

It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.

scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

AbstractWe comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

scholarly journals Влияние условий роста и уровня легирования на кинетику люминесценции слоев Ge : Sb, выращенных на кремнии

2020 ◽  
Vol 54 (7) ◽  
pp. 685
Author(s):  
Д.В. Юрасов ◽  
Н.А. Байдакова ◽  
А.Н. Яблонский ◽  
А.В. Новиков
Keyword(s):  
Doping Level ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Growth Conditions ◽  
Published Data ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Light Emitting ◽  
Pl Intensity ◽  
Time Resolved Photoluminescence

Light-emitting properties of Ge-on-Si(001) layers doped by Sb were studied by stationary and time-resolved photoluminescence (PL) at room temperature. It was obtained that the PL intensity of n-Ge/Si(001) structures is maximized when the doping level is close to the equilibrium solubility of Sb in Ge (~1019 cm-3) which is in accordance with the previously published data. Time-resolved studies of the direct-related PL signal have shown that both the donor density and the growth conditions of doped layer, in particular, the growth temperature influence the PL kinetics. It was obtained that the increase of doping level leads to the decrease of the characteristic carrier lifetime. Moreover, usage of low growth temperatures which is needed to form the doped n-Ge layers also results in shortening of the carrier lifetime as compared with Ge layers grown at high temperatures. It was found that rapid thermal anneal at proper conditions could partially compensate the above mentioned detrimental effects and lead to the increase of both the PL intensity and carrier lifetime.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

2020 ◽  
Vol 90 (2) ◽  
pp. 20301
Author(s):  
Ilkay Demir ◽  
Ahmet Emre Kasapoğlu ◽  
Hasan Feyzi Budak ◽  
Emre Gür ◽  
Sezai Elagoz
Keyword(s):  
Buffer Layer ◽  
Growth Parameters ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Structural Quality ◽  
Atomic Step ◽  
Organic Vapor ◽  
Gaas Buffer Layer ◽  
Metal Organic ◽  
Low Temperature Gaas

We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 °C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75 nm are considered, the epilayer grown on the 25 nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).

State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling

Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers

2007 ◽  
Vol 91 (8) ◽  
pp. 081117 ◽  
Author(s):  
D. Franke ◽  
M. Moehrle ◽  
J. Boettcher ◽  
P. Harde ◽  
A. Sigmund ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Emission Wavelength ◽  
Quantum Dot Lasers ◽  
Organic Vapor ◽  
Metal Organic
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