Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers

2007 ◽  
Vol 91 (8) ◽  
pp. 081117 ◽  
Author(s):  
D. Franke ◽  
M. Moehrle ◽  
J. Boettcher ◽  
P. Harde ◽  
A. Sigmund ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Emission Wavelength ◽  
Quantum Dot Lasers ◽  
Organic Vapor ◽  
Metal Organic

Diagnostics of cap layers in InAs(N) quantum-dot multilayer structures on GaAs(001), grown by metal-organic vapor-phase epitaxy

2007 ◽  
Vol 71 (1) ◽  
pp. 103-105
Author(s):  
Yu. N. Drozdov ◽  
V. M. Danil’tsev ◽  
M. N. Drozdov ◽  
A. V. Murel’ ◽  
O. I. Khrykin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multilayer Structures ◽  
Organic Vapor ◽  
Metal Organic

Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (12) ◽  
pp. 125601 ◽  
Author(s):  
Yoshiyuki Kondo ◽  
Momoko Deura ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Organic Vapor ◽  
Selective Area ◽  
Initial Nucleation ◽  
Metal Organic

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

1998 ◽  
Vol 3 ◽  
Author(s):  
S. Haffouz ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
The Other ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Metal Organic ◽  
Si Doped ◽  
Image Position ◽  
Mg Doped

Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg- and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer deposited on (0001) sapphire substrate. Hexagonal openings in the mask defined into 10 µm diameter circles separated by 5µm were used as a pattern for the present study. Uniform undoped and Mg-doped GaN hexagonal pyramids, delimited by C (0001) and R {101} facets, were achieved with a good selectivity. Si-doped GaN hexagonal pyramids delimited by vertical {100} facets and (0001) top facet were obtained for a high SiH4 flow rate in the vapor phase. We found that the GaN growth rates VR and VC, measured in the R <101> and C <0001> directions respectively, were drastically affected by the Mg and Si incorporation. By adjusting the Mg partial pressure in the growth chamber, the VR/VC ratio can be increased. Hence, the delimiting top C facet do not vanish as usually observed in undoped GaN selective regrowth but conversely expands. On the other hand, under proper growth conditions, 20µm-high Si-doped GaN columns were obtained.

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