scholarly journals 2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 323-328
Author(s):  
M. Rousseau ◽  
J. C. De Jaeger
Keyword(s):  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
Computing Time ◽  
Avalanche Breakdown ◽  
Conservation Equations ◽  
Power Transistors ◽  
Breakdown Phenomenon ◽  
Gate Recess ◽  
Hydrodynamic Energy

A 2D-Hydrodynamic model is carried out to predict the breakdown voltage of microwave field effect transistors. The model is based on the conservation equations inferred from Boltzmann's transport equation, coupled with Poisson’s equation. In order to take into account the channel avalanche breakdown, the charge conservation equations for electrons and holes are considered and a generation term is introduced. The set of equations is solved using finite difference and different computational methods have been tested to save computing time. The model allows us to obtain accurate predictions for power transistors considering a usual gate recess. Results are performed for pseudomorphic ALGaAs/InGaAs/GaAs HEMTs.

Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7194-7198 ◽  
Author(s):  
Axel Hülsmann ◽  
Wolfgang Bronner ◽  
Klaus Köhler ◽  
Jürgen Braunstein ◽  
Paul J. Tasker
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Recess

Microwave field-effect transistors from sulphur-implanted GaAs

1975 ◽  
Author(s):  
W. Kellner ◽  
H. Kniepkamp ◽  
D. Ristow ◽  
H. Boroffka
Keyword(s):  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors

Use of high-purity AlxGa1−x as layers in epitaxial structures for high-power microwave field-effect transistors

1999 ◽  
Vol 25 (8) ◽  
pp. 595-597 ◽  
Author(s):  
K. S. Zhuravlev ◽  
A. I. Toropov ◽  
T. S. Shamirzaev ◽  
A. K. Bazarov ◽  
Yu. N. Rakov ◽  
...  
Keyword(s):  
High Power ◽  
High Purity ◽  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
High Power Microwave ◽  
Power Microwave

scholarly journals Dirac-Source Diode with Sub-unity Ideality Factor

2021 ◽  
Author(s):  
Gyuho Myeong ◽  
Wongil Shin ◽  
Seungho Kim ◽  
Hongsik Lim ◽  
Boram Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Ideality Factor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Drain Current ◽  
Power Circuit ◽  
Power Transistors ◽  
Power Electronic Circuits ◽  
Power Diode

Abstract An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs)1-5, negative-capacitance field-effect transistors (NC-FETs)6, and Dirac-source field-effect transistors (DS-FETs)7-10, have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene7. For the developed DS diode, η < 1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (> 105). The realisation of a DS diode paves the way for the development of low-power electronic circuits.

Sign in / Sign up

Export Citation Format

Share Document