Reinvestigation and extension of the steady‐state Nyquist theorem for multi‐terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors

1996 ◽  
Vol 79 (1) ◽  
pp. 228-241 ◽  
Author(s):  
J. B. Lee ◽  
H. S. Min ◽  
Y. J. Park
Keyword(s):  
Steady State ◽  
Field Effect ◽  
Microwave Field ◽  
Noise Figure ◽  
Field Effect Transistors ◽  
Semiconductor Devices ◽  
Minimum Noise ◽  
Minimum Noise Figure

ON THE NOISE RESISTANCE OF FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES

2001 ◽  
Vol 01 (03) ◽  
pp. R151-R161 ◽  
Author(s):  
ALINA CADDEMI ◽  
NICOLA DONATO
Keyword(s):  
Field Effect ◽  
Noise Figure ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Noise Resistance ◽  
Noise Condition ◽  
Microwave Frequencies ◽  
Modeling Analysis ◽  
Minimum Noise ◽  
Device Noise

This paper presents a survey on the topical aspects of the noise resistance in field-effect transistors (FET) at microwave frequencies. Such noise parameter represents the sensitivity of the device noise figure to the departure from the minimum noise condition and is therefore important in all low-noise applications. The performance of the noise resistance in FETs has been reviewed since the first noise modeling analysis of short-gate devices were presented in the early '70s. The authors also comment and compare their own results on this subject as obtained by extensive experimental activity in the field of noisy device characterization vs. frequency, bias and temperature conditions.

scholarly journals 2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 323-328
Author(s):  
M. Rousseau ◽  
J. C. De Jaeger
Keyword(s):  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
Computing Time ◽  
Avalanche Breakdown ◽  
Conservation Equations ◽  
Power Transistors ◽  
Breakdown Phenomenon ◽  
Gate Recess ◽  
Hydrodynamic Energy

A 2D-Hydrodynamic model is carried out to predict the breakdown voltage of microwave field effect transistors. The model is based on the conservation equations inferred from Boltzmann's transport equation, coupled with Poisson’s equation. In order to take into account the channel avalanche breakdown, the charge conservation equations for electrons and holes are considered and a generation term is introduced. The set of equations is solved using finite difference and different computational methods have been tested to save computing time. The model allows us to obtain accurate predictions for power transistors considering a usual gate recess. Results are performed for pseudomorphic ALGaAs/InGaAs/GaAs HEMTs.

scholarly journals Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application

2018 ◽  
Vol 10 (3) ◽  
pp. 925
Author(s):  
Asmaa Nur Aqilah Zainal Badri ◽  
Norlaili Mohd Noh ◽  
Shukri Bin Korakkottil Kunhi Mohd ◽  
Asrulnizam Abd Manaf ◽  
Arjuna Marzuki ◽  
...  
Keyword(s):  
Thermal Noise ◽  
Noise Figure ◽  
Noise Model ◽  
Ic Design ◽  
Noise Parameters ◽  
Specific Frequency ◽  
Minimum Noise ◽  
Minimum Noise Figure ◽  
Selection Of

Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NF<sub>min</sub>) for frequencies below 3 GHz.

The Design of a 1~13 GHz GaAs Travelling Wave Amplifier

2013 ◽  
Vol 427-429 ◽  
pp. 1080-1084
Author(s):  
Yan Pu ◽  
Guo Qiang Wang ◽  
Zheng Rong He ◽  
Lin Tao Liu
Keyword(s):  
Output Power ◽  
Noise Figure ◽  
Travelling Wave ◽  
Equivalent Model ◽  
Small Signal ◽  
Frequency Range ◽  
Minimum Noise ◽  
Minimum Noise Figure

A 4-stage travelling wave amplifier with 10dB ± 1.2 dB gain and 12 GHz bandwidth is presented in the paper. The parameters of the small signal equivalent model about the GaAs PHEMT are extracted to evaluate the characterization of the device, which is also used to design the amplifier. The amplifier has a minimum noise figure lower than 4.8 dB in the frequency range, and the S11 and S22 are below-10 dB and-7 dB, which demonstrate a good performance. The P1dB and IIP3 are 7.3 dBm and 24 dBm, respectively, and the saturation output power is above 20 dBm at 13 GHz.

Microwave field-effect transistors from sulphur-implanted GaAs

1975 ◽  
Author(s):  
W. Kellner ◽  
H. Kniepkamp ◽  
D. Ristow ◽  
H. Boroffka
Keyword(s):  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors
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