2 D-hydrodynamic energy model including avalanche breakdown phenomenon for power field effect transistors

2002 ◽  
Author(s):  
M. Rousseau ◽  
J.C. De Jaeger
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Model ◽  
Avalanche Breakdown ◽  
Breakdown Phenomenon ◽  
Hydrodynamic Energy

scholarly journals 2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 323-328
Author(s):  
M. Rousseau ◽  
J. C. De Jaeger
Keyword(s):  
Field Effect ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
Computing Time ◽  
Avalanche Breakdown ◽  
Conservation Equations ◽  
Power Transistors ◽  
Breakdown Phenomenon ◽  
Gate Recess ◽  
Hydrodynamic Energy

A 2D-Hydrodynamic model is carried out to predict the breakdown voltage of microwave field effect transistors. The model is based on the conservation equations inferred from Boltzmann's transport equation, coupled with Poisson’s equation. In order to take into account the channel avalanche breakdown, the charge conservation equations for electrons and holes are considered and a generation term is introduced. The set of equations is solved using finite difference and different computational methods have been tested to save computing time. The model allows us to obtain accurate predictions for power transistors considering a usual gate recess. Results are performed for pseudomorphic ALGaAs/InGaAs/GaAs HEMTs.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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