scholarly journals Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor

2001 ◽  
Vol 24 (3) ◽  
pp. 155-163 ◽  
Author(s):  
N. Toufik ◽  
F. Pélanchon ◽  
P. Mialhe
Keyword(s):  
Electrical Properties ◽  
Degradation Process ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Hot Carrier ◽  
Electrical Stress ◽  
Hot Carrier Degradation

The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this degradation depend on the stress duration. The evaluation of these parameters allows to discuss hot carrier degradation process, to estimate the stress magnitude and to control the device.

Hot Carrier Degradation of Gain in Bipolar Transistors

1995 ◽  
Vol 391 ◽  
Author(s):  
Isik C. Kizilyalli ◽  
Jeff D. Bude
Keyword(s):  
Impact Ionization ◽  
High Energy ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Exponential Dependence ◽  
Hot Electron ◽  
Hot Carrier ◽  
Bicmos Technology ◽  
Doping Profiles

AbstractIn this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically to bring physical insight into the bipolar transistor hFE (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures. Detailed process simulations are performed to determine the doping profiles of the base-emitter junction. Monte Carlo transport simulations are then performed at different temperatures and bias conditions to determine the electron and hole distribution functions in the baseemitter junction. AT&T's 0.8 μ.m BICMOS technology is used to fabricate the experimental bipolar transistor structures. For this non-self aligned technology we attribute hFE degradation to the presence of hot holes and secondary electrons which are generated by hot hole impact ionization. This feed-back due to impact ionization has a dominant effect on the high energy tails of the distribution of both holes and electrons even when the overall current multiplication is low. Simple hot electron energy transport models do not contain the complexity to properly describe ionization feedback and carrier heating, and are therefore inadequate. An exponential dependence of the transistor lifetime on BVEBO is deduced for constant voltage stress (Vstress < BVEBO) conditions, confirming the importance of secondaries in the process of degradation.

Role of the bipolar transistor on the hot-carrier-degradation of SOI MOSFETs

2002 ◽  
Author(s):  
Y.S. Chang ◽  
S. Cristoloveanu ◽  
G. Reichert ◽  
P. Gentil ◽  
S.S. Li ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Hot Carrier ◽  
Hot Carrier Degradation

Hydrogen induced degradation in GaInP/GaAs HBTs revealed by low frequency noise measurements

2004 ◽  
Vol 813 ◽  
Author(s):  
J.G. Tartarin ◽  
L. Escotte ◽  
M. Borgarino ◽  
R. Plana ◽  
J. Graffeuil
Keyword(s):  
Low Frequency ◽  
Degradation Process ◽  
Current Gain ◽  
Frequency Noise ◽  
Activation Process ◽  
Ambient Atmosphere ◽  
Low Frequency Noise ◽  
High Concentration ◽  
Electrical Stress ◽  
Noise Measurements

ABSTRACTOne of today's challenges to enable the improved electrical performances and reliability of microelectronic devices consists in controlling impurities contamination: hydrogen appears to be present in most (if not all) the processes steps of the devices making (ambient atmosphere, or associated with AsH3 -VPE or AsCl3 -VPE for example in GaAs based devices,…). Hydrogen induced reliability has already been investigated for many Si or GaAs based technologies ((C)MOS, FET, HEMT, PHEMT as well as HBT devices). These effects of hydrogen on electrical behavior and on long term reliability are very difficult to understand because of the different nature and ionic association of hydrogen (H, H+, H-, H2, or associated with impurities (Ge-H, Be-H, C-H,…). Most of these studies make use of IR, SIMS, Hall measurements: in this paper, we use low frequency noise measurements, associated with static as well as dynamic characterization to identify the degradation process in GaInP/GaAs Heterojunction Bipolar Transistors (HBT supplied by Thomson LCR). The presence of Hydrogen has been identified by DLTS at the LPSC laboratory (Meudon, France). The influence of passivation (SiN and GaInP ledge) on the reliability associated with Hydrogen has been one of the first improvements on HBT devices. Low-frequency noise measurements have been performed in the range of 250Hz to 100 kHz. The noise spectra evolutions (current and voltage noise sources at the input of the devices) allowed us to identify the activation process responsible of the static and dynamic rise and fall of the HBT's current gain. Chemical reactions of C-H complexes have been proved to be the processes responsible of this degradation. Additive reliability tests have been performed on two sets of devices (featuring different emitter length) under two distinct stocking conditions (temperature and biasing of the devices) leading to different junctions temperatures: low-frequency (LF) noise measurements, associated with static and dynamic S parameter measurements led to the same conclusion about the involved chemical reaction. We found that C-H complexes break, and H diffusion towards the extrinsic surface of the device has been observed on the measured leakage currents. Sealed devices have proved to get the same degradation signature than on wafer devices: Hydrogen is assumed to be present in high concentration levels in the device layers, and reacts under thermal and electrical stress.

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation
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