scholarly journals Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 459-463
Author(s):  
M. Lorenzini ◽  
L. Haspeslagh ◽  
J. Van Houdt ◽  
H. E. Maes
Keyword(s):  
Process Simulation ◽  
Cmos Technology ◽  
Calibration Procedure ◽  
Experimental Results ◽  
Depth Profiles ◽  
Doping Profiles ◽  
Process Simulator ◽  
Concentration Depth Profiles ◽  
Fitting Parameters ◽  
Good Agreement

A careful calibration of a continuum process simulator is normally required to achieve a good agreement between simulated results and experimental dopant profiles. However, the validity of such a calibration procedure is often limited to a particular technology. By taking into account a number of physics-based models and experimental results available in literature, the predicting capability of the process simulation has been conveniently improved. In particular, this paper shows how concentration-depth profiles from two different CMOS technologies have been successfully reproduced with a unique set of fitting parameters.

Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles

2017 ◽  
Vol 897 ◽  
pp. 287-290 ◽  
Author(s):  
Matthias Kocher ◽  
Michael Niebauer ◽  
Mathias Rommel ◽  
Volker Haeublein ◽  
Anton J. Bauer
Keyword(s):  
Epitaxial Layer ◽  
Depth Profile ◽  
Point Contact ◽  
Surface Preparation ◽  
Epitaxial Layers ◽  
Depth Profiles ◽  
Current Voltage ◽  
Measured Resistance ◽  
Doping Profiles ◽  
Good Agreement

Point contact current voltage (PCIV) measurements were performed on 4H-SiC samples, both for n- an p-doped epitaxial layers as well as samples with rather shallow doping profiles realized by N- or Al-implantation in a range from 1016 cm-3 to 1019 cm-3. Surface preparation and measurement parameters were investigated in order to determine their influence on the measured resistance profiles. Furthermore depth profile measurements were performed on both an epitaxial layer as well as on implanted samples. These depth profiles could be measured reproducibly and showed good agreement with expected profiles for Al-implanted samples as well as for epitaxial layer whereas for N-implanted samples deviations between measured and expected profiles could be observed. It could be proven that PCIV profiling technique is a promising method for characterizing doped profiles in 4H-SiC, especially on Al-implanted samples.

Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient

1998 ◽  
Vol 525 ◽  
Author(s):  
W. Lerch ◽  
M. Glück ◽  
N. A. Stolwijk ◽  
H. Walk ◽  
M. Schäfer ◽  
...  
Keyword(s):  
Activation Process ◽  
Depth Profiles ◽  
Annealing Conditions ◽  
Fundamental Understanding ◽  
Diffusion Enhancement ◽  
Ultra Shallow Junctions ◽  
Secondary Ion ◽  
Diffusion Activation ◽  
Concentration Depth Profiles ◽  
Good Agreement

ABSTRACTRapid Thermal Annealing (RTA) is indispensable for the formation of ultra-shallow source/drain junctions. To improve the annealing conditions, a fundamental understanding of the influences on the diffusion/activation process is necessary. Ion implantations of 1 keV boron at a dose of Φ≈1 I.1015 cm-2 are annealed in a SHS2800E RTP-system under controlled concentrations of oxygen in nitrogen ambient (0-1 ppm up to 1%). Concentration-depth profiles, measured by Secondary Ion Mass Spectroscopy (SIMS), are simulated within the framework of the kickout model involving diffusion enhancement via supersaturation of silicon self-interstitials. The validity of this interpretation is supported by the simulated results which are in good agreement with expenimental data. After RTA for 10 s at 1050°C the junctions are varying within a range of 800Å to 1400Ådepending on the annealing ambient. The results of the simulation yield finite values of self-interstitial supersaturation as a function of the oxygen concentration.

Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide

2018 ◽  
Vol 924 ◽  
pp. 192-195 ◽  
Author(s):  
Vito Šimonka ◽  
Andreas Hössinger ◽  
Josef Weinbub ◽  
Siegfried Selberherr
Keyword(s):  
Silicon Carbide ◽  
Process Simulation ◽  
Electrical Activation ◽  
Depth Profiles ◽  
Annealing Temperatures ◽  
Experimental Findings ◽  
P Type ◽  
Process Simulator ◽  
Post Implantation ◽  
Activation Behavior

We propose an empirical model to predict electrical activation ratios of aluminium- and boron-implanted silicon carbide with respect to various annealing temperatures. The obtained parameters and model extensions are implemented into Silvaco’s Victory Process simulator to enable accurate predictions of post-implantation process steps. The thus augmented simulator is used for numerous simulations to evaluate the activation behavior of p-type dopants as well as for the full process simulation of a pn-junction SiC diode to extract the carrier and acceptor depth profiles and compare the results with experimental findings.

Experimental Results and Modeling of the Codiffusion of Donors and Acceptors in Si

1995 ◽  
Vol 389 ◽  
Author(s):  
S. Solmi ◽  
S. Valmorri
Keyword(s):  
Ion Pairing ◽  
Experimental Results ◽  
Standard Process ◽  
Model Based ◽  
Proposed Model ◽  
Donor And Acceptor ◽  
Wide Range ◽  
High Concentrations ◽  
Process Simulator ◽  
Good Agreement

ABSTRACTA model based on ion pairing for the simulation of donor and acceptor codiffusion in silicon is presented. The proposed model allows us to obtain a good agreement with the experimental profiles over a wide range of diffusion conditions, specially at high concentrations where the standard process simulator codes give results strongly inaccurate. Comparison of the simulations with new and literature codiffusion profiles is provided.

Inducing Frictional Force to Enhance the Transient Response in Beams

2019 ◽  
Vol 22 (2) ◽  
pp. 88-93
Author(s):  
Hamed Khanger Mina ◽  
Waleed K. Al-Ashtrai
Keyword(s):  
Numerical Analysis ◽  
Transient Response ◽  
Frictional Force ◽  
Damping Ratio ◽  
Experimental Results ◽  
Damping Capacity ◽  
Tightening Force ◽  
Contact Areas ◽  
Good Agreement ◽  
Ansys Workbench

This paper studies the effect of contact areas on the transient response of mechanical structures. Precisely, it investigates replacing the ordinary beam of a structure by two beams of half the thickness, which are joined by bolts. The response of these beams is controlled by adjusting the tightening of the connecting bolts and hence changing the magnitude of the induced frictional force between the two beams which affect the beams damping capacity. A cantilever of two beams joined together by bolts has been investigated numerically and experimentally. The numerical analysis was performed using ANSYS-Workbench version 17.2. A good agreement between the numerical and experimental results has been obtained. In general, results showed that the two beams vibrate independently when the bolts were loosed and the structure stiffness is about 20 N/m and the damping ratio is about 0.008. With increasing the bolts tightening, the stiffness and the damping ratio of the structure were also increased till they reach their maximum values when the tightening force equals to 8330 N, where the structure now has stiffness equals to 88 N/m and the damping ratio is about 0.062. Beyond this force value, increasing the bolts tightening has no effect on stiffness of the structure while the damping ratio is decreased until it returned to 0.008 when the bolts tightening becomes immense and the beams behave as one beam of double thickness.

PHOTOINDUCED NONLINEAR OCTUPOLAR POLARIZATION: TRANSIENT AND PERMANENT REGIMES

1996 ◽  
Vol 05 (04) ◽  
pp. 653-670 ◽  
Author(s):  
CÉLINE FIORINI ◽  
JEAN-MICHEL NUNZI ◽  
FABRICE CHARRA ◽  
IFOR D.W. SAMUEL ◽  
JOSEPH ZYSS
Keyword(s):  
Theoretical Analysis ◽  
Second Harmonic ◽  
Experimental Results ◽  
Polar Field ◽  
Rotational Spectrum ◽  
Dual Frequency ◽  
One Dimensional ◽  
Ethyl Violet ◽  
Disperse Red 1 ◽  
Good Agreement

An original poling method using purely optical means and based on a dual-frequency interference process is presented. We show that the coherent superposition of two beams at fundamental and second-harmonic frequencies results in a polar field with an irreducible rotational spectrum containing both a vector and an octupolar component. This enables the method to be applied even to molecules without a permanent dipole such as octupolar molecules. After a theoretical analysis of the process, we describe different experiments aiming at light-induced noncentrosymmetry performed respectively on one-dimensional Disperse Red 1 and octupolar Ethyl Violet molecules. Macroscopic octupolar patterning of the induced order is demonstrated in both transient and permanent regimes. Experimental results show good agreement with theory.

scholarly journals Comparison of Experimental and Numerical Transient Drop Deformation during Transition through Orifices in High-Pressure Homogenizers

2021 ◽  
Vol 5 (3) ◽  
pp. 32
Author(s):  
Benedikt Mutsch ◽  
Peter Walzel ◽  
Christian J. Kähler
Keyword(s):  
High Pressure ◽  
Visual Analysis ◽  
Imaging Technique ◽  
Extensional Flow ◽  
Droplet Breakup ◽  
Experimental Results ◽  
Drop Deformation ◽  
Droplet Deformation ◽  
Shadow Imaging ◽  
Good Agreement

The droplet deformation in dispersing units of high-pressure homogenizers (HPH) is examined experimentally and numerically. Due to the small size of common homogenizer nozzles, the visual analysis of the transient droplet generation is usually not possible. Therefore, a scaled setup was used. The droplet deformation was determined quantitatively by using a shadow imaging technique. It is shown that the influence of transient stresses on the droplets caused by laminar extensional flow upstream the orifice is highly relevant for the droplet breakup behind the nozzle. Classical approaches based on an equilibrium assumption on the other side are not adequate to explain the observed droplet distributions. Based on the experimental results, a relationship from the literature with numerical simulations adopting different models are used to determine the transient droplet deformation during transition through orifices. It is shown that numerical and experimental results are in fairly good agreement at limited settings. It can be concluded that a scaled apparatus is well suited to estimate the transient droplet formation up to the outlet of the orifice.

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

2009 ◽  
Vol 156-158 ◽  
pp. 199-204
Author(s):  
Hiroaki Kariyazaki ◽  
Tatsuhiko Aoki ◽  
Kouji Izunome ◽  
Koji Sueoka
Keyword(s):  
Molecular Simulation ◽  
Wafer Bonding ◽  
Crystal Orientation ◽  
High Performance ◽  
Cmos Technology ◽  
Experimental Results ◽  
Interfacial Structure ◽  
Atomic Configuration ◽  
Promising Technology ◽  
Bonded Interface

Hybrid crystal orientation technology (HOT) substrates comprised of Si (100) and (110) surface orientation paralleling each <110> direction attract considerable attentions as one of the promising technology for high performance bulk CMOS technology. Although HOT substrates are fabricated by wafer bonding of Si (110) and Si (100) surfaces, it is not clear the atomic configuration of interfacial structure. Furthermore, the possibility for the interface to be an effective gettering source of impurity metals was not well studied. In this paper, we studied the interfacial structure and gettering efficiency of the atomic bonded interface by molecular simulations. The results indicate that the simulated atomic configuration and gettering efficiency of the bonded interface agreed well with the experimental results.

Simulation of Sphere’s Motion Induced by Shock Waves

2012 ◽  
Vol 134 (10) ◽  
Author(s):  
Dan Igra ◽  
Ozer Igra ◽  
Lazhar Houas ◽  
Georges Jourdan
Keyword(s):  
Shock Waves ◽  
Drag Coefficient ◽  
Drag Force ◽  
Stationary Flow ◽  
Experimental Results ◽  
Experimental Findings ◽  
Sphere Drag ◽  
Simulation Scheme ◽  
Good Agreement

Simulations of experimental results appearing in Jourdan et al. (2007, “Drag Coefficient of a Sphere in a Non-Stationary Flow: New Results,”Proc. R. Soc. London, Ser. A, 463, pp. 3323–3345) regarding acceleration of a sphere by the postshock flow were conducted in order to find the contribution of the various parameters affecting the sphere drag force. Based on the good agreement found between present simulations and experimental findings, it is concluded that the proposed simulation scheme could safely be used for evaluating the sphere’s motion in the postshock flow.

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