Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient

1998 ◽  
Vol 525 ◽  
Author(s):  
W. Lerch ◽  
M. Glück ◽  
N. A. Stolwijk ◽  
H. Walk ◽  
M. Schäfer ◽  
...  
Keyword(s):  
Activation Process ◽  
Depth Profiles ◽  
Annealing Conditions ◽  
Fundamental Understanding ◽  
Diffusion Enhancement ◽  
Ultra Shallow Junctions ◽  
Secondary Ion ◽  
Diffusion Activation ◽  
Concentration Depth Profiles ◽  
Good Agreement

ABSTRACTRapid Thermal Annealing (RTA) is indispensable for the formation of ultra-shallow source/drain junctions. To improve the annealing conditions, a fundamental understanding of the influences on the diffusion/activation process is necessary. Ion implantations of 1 keV boron at a dose of Φ≈1 I.1015 cm-2 are annealed in a SHS2800E RTP-system under controlled concentrations of oxygen in nitrogen ambient (0-1 ppm up to 1%). Concentration-depth profiles, measured by Secondary Ion Mass Spectroscopy (SIMS), are simulated within the framework of the kickout model involving diffusion enhancement via supersaturation of silicon self-interstitials. The validity of this interpretation is supported by the simulated results which are in good agreement with expenimental data. After RTA for 10 s at 1050°C the junctions are varying within a range of 800Å to 1400Ådepending on the annealing ambient. The results of the simulation yield finite values of self-interstitial supersaturation as a function of the oxygen concentration.

The Effect of Implantation and Annealing Conditions on the Fe Profile in Semi-Insulating InP.

1986 ◽  
Vol 74 ◽  
Author(s):  
G. Bahir ◽  
J. L. Merz ◽  
J. R. Abelson ◽  
T. W. Sigmon
Keyword(s):  
Mass Spectrometry ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Depth Profiles ◽  
Annealing Conditions ◽  
Residual Damage ◽  
Secondary Ion

AbstractThe Fe depth distribution has been measured in semi-insulating (SI) InP implanted with Si as a function of implant temperature and post-implant annealing technique (either furnace annealing or rapid thermal annealing). Depth profiles obtained by secondary ion mass spectrometry and Rutherford backscattering measurements of the damage demonstrate that Fe redistributes into regions of residual damage during thermal processing. These results are interpreted in terms of implantation-related damage effects and the stoichiometry imbalance induced by the Si implantation.

Self-catalyzed Tritium Incorporation in Amorphous and Crystalline

2010 ◽  
Vol 1245 ◽  
Author(s):  
Baojun Liu ◽  
Nazir Kherani ◽  
Kevin P Chen ◽  
Tome Kosteski ◽  
Keith Leong ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Mass Spectroscopy ◽  
Crystalline Silicon ◽  
Tritium Concentration ◽  
Exposure Condition ◽  
Material Microstructure ◽  
Tritium Content ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Concentration Depth Profiles

AbstractTritiated amorphous and crystalline silicon is prepared by exposing silicon samples to tritium gas (T2) at various pressures and temperatures. Total tritium content and tritium concentration depth profiles in the tritiated samples are obtained using thermal effusion and Secondary Ion Mass Spectroscopy (SIMS) measurements. The results indicate that tritium incorporation is a function of the material microstructure rather than the tritium exposure condition. The highest tritium concentration attained in the amorphous silicon is about 20 at.% on average with a penetration depth of about 50 nm. In contrast, the tritium occluded in the c-Si is about 4 at.% with a penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is higher than reported results from post-hydrogenation experiments. The beta irradiation appears to catalyze the tritiation process and enhance the tritium dissolution in silicon material.

scholarly journals Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 459-463
Author(s):  
M. Lorenzini ◽  
L. Haspeslagh ◽  
J. Van Houdt ◽  
H. E. Maes
Keyword(s):  
Process Simulation ◽  
Cmos Technology ◽  
Calibration Procedure ◽  
Experimental Results ◽  
Depth Profiles ◽  
Doping Profiles ◽  
Process Simulator ◽  
Concentration Depth Profiles ◽  
Fitting Parameters ◽  
Good Agreement

A careful calibration of a continuum process simulator is normally required to achieve a good agreement between simulated results and experimental dopant profiles. However, the validity of such a calibration procedure is often limited to a particular technology. By taking into account a number of physics-based models and experimental results available in literature, the predicting capability of the process simulation has been conveniently improved. In particular, this paper shows how concentration-depth profiles from two different CMOS technologies have been successfully reproduced with a unique set of fitting parameters.

Concentration Profile Simulation of SiC/Si Heterostructures

2016 ◽  
Vol 858 ◽  
pp. 501-504
Author(s):  
Jörg Pezoldt ◽  
V.S. Kharlamov ◽  
Dmitri V. Kulikov ◽  
Maxim N. Lubov ◽  
Yuri V. Trushin
Keyword(s):  
Mass Spectrometry ◽  
Computer Simulation ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Ion Sputtering ◽  
Depth Profiles ◽  
Self Consistent ◽  
Secondary Ion ◽  
Concentration Depth Profiles ◽  
Consistent Approach

Computer simulation of the concentration profiles evolution in SiC/Si heterostructures during growth and subsequent ion sputtering is presented. Simulation is based on a complex self-consistent approach combining kinetic and ballistic methods. Within the framework of the proposed method concentration depth profiles in SiC/Si heterostructure with pre-deposited Ge impurity are calculated and compared with experimental sputtering profiles obtained by secondary ion mass spectrometry.

Thermal Annealing of Shallow Implanted Phosphorus in Si(100)

1991 ◽  
Vol 235 ◽  
Author(s):  
Ning Yu ◽  
K. B. Ma ◽  
Z. H. Zhang ◽  
W. K. Chu ◽  
C. Kirschbaum ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Activation ◽  
Tail Region ◽  
Depth Profiles ◽  
Profile Depth ◽  
Phosphorus In Silicon ◽  
Secondary Ion ◽  
Concentration Depth Profiles

ABSTRACTThe effect of channeling on the diffusion of ion implanted phosphorus in silicon has been investigated. Silicon samples, implanted with 25–100 keV P along the [100] channeling and the random equivalent directions, were subjected to thermal annealing over a temperature range of 600–1050 °C. Secondary Ion Mass Spectrometry (SIMS) and Spreading Resistance Probe (SRP) have been used to determine the atomic and carrier concentration depth profiles, respectively. The findings show that after annealing, the P profiles by implantation along the random equivalent direction can be kept shallower than the profiles obtained by implantation along the [100] channeling direction. Through proper annealing and electrical activation, only minimal diffusion in the tail region of the profiles occurred. For 50 keV P at 1×1015 at./cm2, changing the implantation from the [100] to the random equivalent direction leads to a reduction in the profile depth of about 50% (at 1×1017at./cm3). After 10 seconds of rapid thermal annealing (RTA) at 1050 °C, the profile depth remains more than 30% shallower than the channeled profile.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles

2017 ◽  
Vol 897 ◽  
pp. 287-290 ◽  
Author(s):  
Matthias Kocher ◽  
Michael Niebauer ◽  
Mathias Rommel ◽  
Volker Haeublein ◽  
Anton J. Bauer
Keyword(s):  
Epitaxial Layer ◽  
Depth Profile ◽  
Point Contact ◽  
Surface Preparation ◽  
Epitaxial Layers ◽  
Depth Profiles ◽  
Current Voltage ◽  
Measured Resistance ◽  
Doping Profiles ◽  
Good Agreement

Point contact current voltage (PCIV) measurements were performed on 4H-SiC samples, both for n- an p-doped epitaxial layers as well as samples with rather shallow doping profiles realized by N- or Al-implantation in a range from 1016 cm-3 to 1019 cm-3. Surface preparation and measurement parameters were investigated in order to determine their influence on the measured resistance profiles. Furthermore depth profile measurements were performed on both an epitaxial layer as well as on implanted samples. These depth profiles could be measured reproducibly and showed good agreement with expected profiles for Al-implanted samples as well as for epitaxial layer whereas for N-implanted samples deviations between measured and expected profiles could be observed. It could be proven that PCIV profiling technique is a promising method for characterizing doped profiles in 4H-SiC, especially on Al-implanted samples.

Concentration Depth Profiles of Microplastic Particles in River Flow and Implications for Surface Sampling

2021 ◽  
Vol 55 (9) ◽  
pp. 6032-6041
Author(s):  
Win Cowger ◽  
Andrew B. Gray ◽  
James J. Guilinger ◽  
Brandon Fong ◽  
Kryss Waldschläger
Keyword(s):  
River Flow ◽  
Surface Sampling ◽  
Depth Profiles ◽  
Concentration Depth Profiles

Defect Structure of MEV Si Implantation in GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
S.-Tong Lee ◽  
G. Braunstein ◽  
Samuel Chen
Keyword(s):  
Free Surface ◽  
Defect Structure ◽  
Room Temperature ◽  
Surface Region ◽  
Peak Position ◽  
Lattice Disorder ◽  
Depth Profiles ◽  
Trim Calculation ◽  
Good Agreement

ABSTRACTThe defect and atomic profiles for MeV implantation of Si in GaAs were investigated using He++ channeling, TEM, and SIMS. Doses of 1–10 × 1015Si/cm2 at 1–3 MeV were used. MeV implantation at room temperature rendered only a small amount of lattice disorder in GaAs. Upon annealing at 400°C for 1 h or 800°C for 30 a, we observed a ‘defect-free’ surface region (- 1 μ for 3 MeV implant). Below this region, extensive secondary defects were formed in a band which was 0.7 μ wide and centered at 2 μ for 3 MeV implant. These defects were mostly dislocations lying in the [111] plane. SIMS depth profiles of Si implants showed the Si peak to be very close to the peak position of the defects. The experimental profiles of Si were compared to the TRIM calculation; generally good agreement existed among the peak positions.

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