scholarly journals Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 57-61
Author(s):  
Jürgen Jakumeit ◽  
Torsten Mietzner ◽  
Umberto Ravaioli
Keyword(s):  
Monte Carlo ◽  
Iteration Process ◽  
Computation Time ◽  
Iteration Scheme ◽  
Hot Electron ◽  
Short Channel ◽  
Standard Work ◽  
Electron Distributions ◽  
Computational Resources ◽  
Silicon Device

The Local Iterative Monte Carlo technique (LIMO) is used for an effective simulation of hot electron distributions in silicon MOSFETs. This new Monte Carlo approach yields an efficient use of the computational resources due to a different iteration scheme. In addition the necessary computation time can be further reduced by a reuse of the computational expensive MC step simulation results in the iteration process. The later possibility is investigated in detail in this work. Results for short channel MOSFETs demonstrates that correct two-dimensional hot electron distributions can be calculated by LIMO within 1 hour on a standard work station.

COMPUTATIONAL ASPECTS OF THE LOCAL ITERATIVE MONTE CARLO TECHNIQUE

2000 ◽  
Vol 11 (04) ◽  
pp. 665-673 ◽  
Author(s):  
JÜRGEN JAKUMEIT
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Data Transfer ◽  
Iteration Process ◽  
Computation Time ◽  
Monte Carlo Technique ◽  
Hot Electron ◽  
Network File System ◽  
Speed Up ◽  
Computational Aspects

Lately, the Local Iterative Monte Carlo technique was introduced for an efficient simulation of effects connected to sparsely populated regions in semiconductor devices like hot electron effects in silicon MOSFETs. This paper focuses on computational aspects of this new Monte Carlo technique, namely the reduction of the computation time by parallel computation and the reuse of drift information. The Local Iterative Monte Carlo technique combines short Monte Carlo particle flight simulations with an iteration process to a complete device simulation. The separation between short Monte Carlo simulations and the iteration process makes a simple parallelization strategy possible. The necessary data transfer is small and can be performed via the Network File System. An almost linear speed up could be achieved. Besides by parallelization, the computational expenses can be significantly reduced, when the results of the short Monte Carlo simulations are memorized in a drift table and used several times. A comparison between a bulk, a one-dimensional and the two-dimensional Local Iterative Monte Carlo simulation reveals that by using the drift information more than once, becomes increasingly efficient with increasing dimension of the simulation.

scholarly journals Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 343-347 ◽  
Author(s):  
Jürgen Jakumeit ◽  
Amanda Duncan ◽  
Umberto Ravaioli ◽  
Karl Hess
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
High Energy ◽  
Stationary Condition ◽  
Good Resolution ◽  
Mutation Operator ◽  
Hot Electron ◽  
High Energy Tail ◽  
Electron Distributions ◽  
Dimensional Simulation

The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.

scholarly journals New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 307-311
Author(s):  
J. Jakumeit ◽  
U. Ravaioli ◽  
K. Hess
Keyword(s):  
Monte Carlo ◽  
Evolutionary Algorithm ◽  
Mutation Operator ◽  
Hot Electron ◽  
New Approach ◽  
Substrate Current ◽  
Electron Distributions ◽  
First Results ◽  
Calculation Ability ◽  
Electron Effects

We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for electron distributions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from measurement results. The search of the Evolutionary Algorithm is directed toward physically correct distributions by help of a Monte Carlo like mutation operator. Results for bulk-Si demonstrate the correctness of the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First results for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate
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