Monte Carlo Studies of Hot-Electron Distributions in Thin Insulating Films. 2. Energy Dependent Mean Free Path and Instability

1976 ◽  
Author(s):  
S. Baidyaroy ◽  
M. A. Lampert ◽  
B. Zee ◽  
Ramon U. Martinelli
Keyword(s):  
Monte Carlo ◽  
Free Path ◽  
Mean Free Path ◽  
Hot Electron ◽  
Insulating Films ◽  
Monte Carlo Studies ◽  
Electron Distributions ◽  
Energy Dependent

Measurement of Ballistic Mean-Free-Path of Hot Quasiparticles Injected in Superconductor-Base Hot-Electron Transistors

1986 ◽  
Vol 25 (Part 1, No. 3) ◽  
pp. 402-405 ◽  
Author(s):  
Takeshi Kobayashi ◽  
Hiroyuki Sakai ◽  
Yoshiyuki Kurita ◽  
Masayoshi Tonouchi ◽  
Michihiro Okada
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electron ◽  
Electron Transistors

scholarly journals Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 343-347 ◽  
Author(s):  
Jürgen Jakumeit ◽  
Amanda Duncan ◽  
Umberto Ravaioli ◽  
Karl Hess
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
High Energy ◽  
Stationary Condition ◽  
Good Resolution ◽  
Mutation Operator ◽  
Hot Electron ◽  
High Energy Tail ◽  
Electron Distributions ◽  
Dimensional Simulation

The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.

Sign in / Sign up

Export Citation Format

Share Document