scholarly journals Monte Carlo and hydrodynamic simulation of a one dimensional n+ – n – n+ silicon diode

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 247-250 ◽  
Author(s):  
O. Muscato ◽  
R. M. Pidatella ◽  
M. V. Fischetti
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Hydrodynamic Model ◽  
Closure Relation ◽  
Hydrodynamic Simulation ◽  
One Dimensional ◽  
Silicon Diode ◽  
Entropy Principle

An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n+ - n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.

scholarly journals Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 173-178 ◽  
Author(s):  
M. V. Fischetti
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Master Equation ◽  
Electronic Devices ◽  
Open Boundary ◽  
Open Boundary Conditions ◽  
Small Length ◽  
One Dimensional ◽  
Pauli Master Equation

It is argued that the Pauli master equation can be used to simulate electron transport in very small electronic devices under steady-state conditions. Written in a basis of suitable wavefunctions and with the appropriate open boundary conditions, this equation removes some of the approximations which render the Boltzmann equation unsatisfactory at small length-scales. The main problems consist in describing the interaction of the system with the reservoirs and in assessing the range of validity of the equation: Only devices smaller than the size of the electron wavepackets injected from the contacts can be handled. Two one-dimensional examples solved by a simple Monte Carlo technique are presented.

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

How changes in the crystal temperature and the doping concentration impact upon bulk wurtzite zinc oxide’s electron transport response

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2673-2678
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Drift Velocity ◽  
Doping Concentration ◽  
Electron Drift ◽  
Crystal Temperature ◽  
Transient Transport ◽  
Transport Response ◽  
The Impact

ABSTRACTThe role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.

Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance

2013 ◽  
Vol 1577 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Indium Nitride ◽  
Device Performance ◽  
Electron Drift ◽  
Electron Device ◽  
Velocity Enhancement

ABSTRACTWe review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented.

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