scholarly journals Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 173-178 ◽  
Author(s):  
M. V. Fischetti

It is argued that the Pauli master equation can be used to simulate electron transport in very small electronic devices under steady-state conditions. Written in a basis of suitable wavefunctions and with the appropriate open boundary conditions, this equation removes some of the approximations which render the Boltzmann equation unsatisfactory at small length-scales. The main problems consist in describing the interaction of the system with the reservoirs and in assessing the range of validity of the equation: Only devices smaller than the size of the electron wavepackets injected from the contacts can be handled. Two one-dimensional examples solved by a simple Monte Carlo technique are presented.

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 247-250 ◽  
Author(s):  
O. Muscato ◽  
R. M. Pidatella ◽  
M. V. Fischetti

An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n+ - n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.


1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2673-2678
Author(s):  
Poppy Siddiqua ◽  
Walid A. Hadi ◽  
Michael S. Shur ◽  
Stephen K. O’Leary

ABSTRACTThe role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron transport simulations are drawn upon for the purposes of this analysis. We find that both the crystal temperature and the doping concentration greatly influence the character of the steady-state and transient electron transport response. In particular, for the case of steady-state electron transport, the peak drift velocity decreases by 30% as the crystal temperature is increased from 100 to 700 K, this decrease in velocity being only 20% as the doping concentration is increased from 1015 to 1019 cm-3. The impact on the transient electron drift velocity is not as acute.


1998 ◽  
Vol 39 (9) ◽  
pp. 4746-4758 ◽  
Author(s):  
Heng Fan ◽  
Bo-Yu Hou ◽  
Guang-Liang Li ◽  
Kang-Jie Shi ◽  
Yan-Shen Wang

2002 ◽  
Vol 68 (3) ◽  
pp. 221-235 ◽  
Author(s):  
C. MELLOR ◽  
V. S. TITOV ◽  
E. R. PRIEST

A technique is developed for analysing the linear collapse properties of spatially linear two-dimensional null points with open boundary conditions. A treatment is given of the collapse of nulls which have current and flow so that they are initially in a steady-state balance between a magnetic force, a pressure force and a centrifugal force. This extends the previous results for initially current-free X-type nulls with no flow. It is found that all X-points, regardless of the current and flow tend to collapse. Also, O-points collapse in the absence of a plasma flow, but O-points with a large current and possessing a highly super-Alfvénic plasma flow can be stable against linear collapse.


2014 ◽  
Vol 115 (19) ◽  
pp. 194309 ◽  
Author(s):  
Daniel Chiruta ◽  
Jorge Linares ◽  
Seiji Miyashita ◽  
Kamel Boukheddaden

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