scholarly journals Photoluminescence Spectra of MESFET and HEMT

1995 ◽  
Vol 17 (4) ◽  
pp. 207-225
Author(s):  
P. Conti
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Photoluminescence Spectroscopy ◽  
Semiconductor Layer ◽  
Photoluminescence Spectra ◽  
Buried Interfaces ◽  
Semiconductor Quantum Wells ◽  
Reliability Assessments ◽  
Low Amplitude ◽  
Layer Composition

Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collected, and the experimental difficulties, have limited the analyses to samples made on purpose.On the contrary, in this work, the analyses at room temperature and at 4 K of a commercial MESFET and of a commercial HEMT are presented. With the performed experiments, new informations about the composition of these components were achieved; in particular signals from deep levels and from the Cr states of the HEMT substrate were detected.After further studies on the shape of the spectra, the photoluminescence could probably be employed in reliability assessments to show the modifications in the semiconductor layer composition and in the shape of the heterostructure's surfaces of single devices.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy

2007 ◽  
Vol 101 (11) ◽  
pp. 116107 ◽  
Author(s):  
M. Motyka ◽  
G. Sęk ◽  
R. Kudrawiec ◽  
P. Sitarek ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Photoluminescence Spectroscopy

scholarly journals МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS

2021 ◽  
Vol 6 (12(81)) ◽  
pp. 30-35
Author(s):  
З. Давыдова
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Layer ◽  
Optimal Composition ◽  
Photoluminescence Spectra ◽  
Frequency Range ◽  
Emission Frequency ◽  
Layer Width ◽  
Multilayer Heterostructures ◽  
Infrared Frequency Range

This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]

scholarly journals МОДЕЛИРОВАНИЕ И РАСЧЕТ СПЕКТРА ФОТОЛЮМИНЕСЦЕНЦИИ ГЕТЕРОСТРУКТУРЫ С КВАНТОВОЙ ЯМОЙ НА ПРИМЕРЕ ALGaAS/GaAS

2021 ◽  
Vol 6 (12(81)) ◽  
pp. 30-35
Author(s):  
З. Давыдова
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Layer ◽  
Optimal Composition ◽  
Photoluminescence Spectra ◽  
Frequency Range ◽  
Emission Frequency ◽  
Layer Width ◽  
Multilayer Heterostructures ◽  
Infrared Frequency Range

This research aims to improve the available means for characterizing the emission properties of quantum well heterostructures by modeling and calculating the absorption and photoluminescence spectra using the GaAs/AlGaAs heterostructure as an example. Research is conducted based on multilayer heterostructures and heterostructures with quantum wells to develop detectors and emitting elements in the infrared frequency range, pulsed solid-state generators in the millimeter and submillimeter-wave ranges. The study of radiating properties of heterostructures with a quantum well on A3B5 compounds has become widespread [1-3]. It is possible to control the heterostructure's emission frequency by selecting the optimal composition of the wideband semiconductor layer, the level and type of its doping, the doping region, and the quantum well layer width, which is of applied importance for the development of optoelectronic devices. Technologies for manufacturing such heterostructures are labor-intensive, time-consuming, and expensive processes, which contribute to developing methods for modeling and calculating the characteristic frequencies of radiation and absorption of radiation. Based on such calculations, radiating elements of the submicronic wavelength range can be developed based on heterostructures with a quantum well on the A3B5 type compounds. [4]

Microcavities

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Quantum Wells ◽  
Strong Light ◽  
Fundamental Physics ◽  
Postgraduate Students ◽  
Optical Cavities ◽  
Semiconductor Quantum Wells ◽  
Exciton Polaritons ◽  
Different Types ◽  
Potential Applications ◽  
Experimental Findings

Both rich fundamental physics of microcavities and their intriguing potential applications are addressed in this book, oriented to undergraduate and postgraduate students as well as to physicists and engineers. We describe the essential steps of development of the physics of microcavities in their chronological order. We show how different types of structures combining optical and electronic confinement have come into play and were used to realize first weak and later strong light–matter coupling regimes. We discuss photonic crystals, microspheres, pillars and other types of artificial optical cavities with embedded semiconductor quantum wells, wires and dots. We present the most striking experimental findings of the recent two decades in the optics of semiconductor quantum structures. We address the fundamental physics and applications of superposition light-matter quasiparticles: exciton-polaritons and describe the most essential phenomena of modern Polaritonics: Physics of the Liquid Light. The book is intended as a working manual for advanced or graduate students and new researchers in the field.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

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