scholarly journals Prediction of extremely long mobile electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

2011 ◽  
Vol 98 (7) ◽  
pp. 073108 ◽  
Author(s):  
N. J. Harmon ◽  
W. O. Putikka ◽  
Robert Joynt
Keyword(s):  
Quantum Wells ◽  
Electron Spin ◽  
Room Temperature ◽  
Semiconductor Quantum Wells ◽  
Mobile Electron

scholarly journals Electron spin relaxation and momentum relaxation in semiconductor quantum wells

2006 ◽  
Vol 55 (6) ◽  
pp. 2961
Author(s):  
Wu Yu ◽  
Jiao Zhong-Xing ◽  
Lei Liang ◽  
Wen Jin-Hui ◽  
Lai Tian-Shu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Semiconductor Quantum Wells ◽  
Momentum Relaxation

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3μm

2006 ◽  
Vol 89 (21) ◽  
pp. 211122 ◽  
Author(s):  
C. Reith ◽  
S. J. White ◽  
M. Mazilu ◽  
A. Miller ◽  
J. Konttinen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electron Spin Relaxation ◽  
Temperature Electron

Room‐temperature electron spin dynamics in GaAs/AlGaAs quantum wells

1996 ◽  
Vol 68 (6) ◽  
pp. 797-799 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Yuji Nishikawa ◽  
Osamu Wada
Keyword(s):  
Quantum Wells ◽  
Electron Spin ◽  
Room Temperature ◽  
Spin Dynamics ◽  
Temperature Electron ◽  
Electron Spin Dynamics

Electron-spin polarization near the Fermi level inn-type modulation-doped semiconductor quantum wells

1999 ◽  
Vol 59 (12) ◽  
pp. R7813-R7816 ◽  
Author(s):  
A. L. C. Triques ◽  
J. Urdanívia ◽  
F. Iikawa ◽  
M. Z. Maialle ◽  
J. A. Brum ◽  
...  
Keyword(s):  
Fermi Level ◽  
Quantum Wells ◽  
Spin Polarization ◽  
Electron Spin ◽  
Electron Spin Polarization ◽  
Semiconductor Quantum Wells

scholarly journals Photoluminescence Spectra of MESFET and HEMT

1995 ◽  
Vol 17 (4) ◽  
pp. 207-225
Author(s):  
P. Conti
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Photoluminescence Spectroscopy ◽  
Semiconductor Layer ◽  
Photoluminescence Spectra ◽  
Buried Interfaces ◽  
Semiconductor Quantum Wells ◽  
Reliability Assessments ◽  
Low Amplitude ◽  
Layer Composition

Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collected, and the experimental difficulties, have limited the analyses to samples made on purpose.On the contrary, in this work, the analyses at room temperature and at 4 K of a commercial MESFET and of a commercial HEMT are presented. With the performed experiments, new informations about the composition of these components were achieved; in particular signals from deep levels and from the Cr states of the HEMT substrate were detected.After further studies on the shape of the spectra, the photoluminescence could probably be employed in reliability assessments to show the modifications in the semiconductor layer composition and in the shape of the heterostructure's surfaces of single devices.

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