Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy

2007 ◽  
Vol 101 (11) ◽  
pp. 116107 ◽  
Author(s):  
M. Motyka ◽  
G. Sęk ◽  
R. Kudrawiec ◽  
P. Sitarek ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Photoluminescence Spectroscopy

scholarly journals Photoluminescence Spectra of MESFET and HEMT

1995 ◽  
Vol 17 (4) ◽  
pp. 207-225
Author(s):  
P. Conti
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Photoluminescence Spectroscopy ◽  
Semiconductor Layer ◽  
Photoluminescence Spectra ◽  
Buried Interfaces ◽  
Semiconductor Quantum Wells ◽  
Reliability Assessments ◽  
Low Amplitude ◽  
Layer Composition

Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collected, and the experimental difficulties, have limited the analyses to samples made on purpose.On the contrary, in this work, the analyses at room temperature and at 4 K of a commercial MESFET and of a commercial HEMT are presented. With the performed experiments, new informations about the composition of these components were achieved; in particular signals from deep levels and from the Cr states of the HEMT substrate were detected.After further studies on the shape of the spectra, the photoluminescence could probably be employed in reliability assessments to show the modifications in the semiconductor layer composition and in the shape of the heterostructure's surfaces of single devices.

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold

scholarly journals Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Room Temperature

Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

2013 ◽  
Vol 102 (20) ◽  
pp. 202408 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
Y. Liu ◽  
C. Y. Jiang ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect
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