scholarly journals Reaction Dynamics of Electronically Excited Barium Atoms With Free Molecules and Molecular Clusters

1990 ◽  
Vol 10 (5-6) ◽  
pp. 389-403 ◽  
Author(s):  
J. M. Mestdagh ◽  
C. Alcaraz ◽  
J. Berlande ◽  
J. Cuvellier ◽  
T. Gustavsson ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Reaction Dynamics ◽  
Molecular Clusters ◽  
Reaction Products ◽  
Chemiluminescent Reaction ◽  
Electronically Excited ◽  
Reaction Channels ◽  
Diallyl Ether ◽  
Free Molecules

In this review article we describe some recent results obtained in our laboratory. The successful combination of crossed molecular beam techniques and various laser excitation schemes has been used to study chemiluminescent reactions of ground and excited electronic states of barium with free molecules and molecular clusters. Studies include the identification of reaction products in cases where many chemiluminescent reaction channels are opened. The case of Ba(6sp1P1,​6s5d1D2,​6s5d3Dj) reacting with H20, methanol, ethanol, propanol-1, propanol-2, methyl-2, propanol-2, butanol-l, allyl alcohol, dimethyl ether, diethyl ether and diallyl ether is examined. A reaction mechanism is proposed which accounts for all these reactions. Studies reported in this review also include the unravelling of reaction dynamics where various forms of energy are mixed (electronic and kinetic energy). This is shown in studies of Ba(1D2​and​1P1)+O2 reactions. Finally the role of molecular clusters as reactant is examined. Evidence is provided that clusters of N20, H20 and CO2, in collision with Ba(1S0​and​1P1)+O2, do not lead efficiently to both reactive and non reactive luminescent exit channels.

Reaction Dynamics of O(3P) + Propyne: I. Primary Products, Branching Ratios, and Role of Intersystem Crossing from Crossed Molecular Beam Experiments

2016 ◽  
Vol 120 (27) ◽  
pp. 4603-4618 ◽  
Author(s):  
Gianmarco Vanuzzo ◽  
Nadia Balucani ◽  
Francesca Leonori ◽  
Domenico Stranges ◽  
Vaclav Nevrly ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Reaction Dynamics ◽  
Branching Ratios ◽  
Intersystem Crossing ◽  
Primary Products ◽  
Crossed Molecular Beam

scholarly journals Isospin effects on reaction dynamics at Fermi energies

2018 ◽  
Vol 194 ◽  
pp. 07003
Author(s):  
Giuseppe Politi ◽  
Luis Acosta ◽  
Maria Victoria Andrés ◽  
Lucrezia Auditore ◽  
Christian Beck ◽  
...  
Keyword(s):  
Reaction Mechanisms ◽  
Reaction Dynamics ◽  
Research Field ◽  
Collision Dynamics ◽  
Energy Term ◽  
Reaction Products ◽  
Nuclear Equation Of State ◽  
Active Research ◽  
The Stability

The study of nuclei properties and of collision dynamics is a very active research field whose result have implications in different domains as for example astrophysics. The present and future facilities delivering radioactive ion beams with high intensity allow to extend these studies in the region far from the stability valley. New insight has thus been found on the effects of neutron richness on reaction mechanisms as well as on nuclear structure and nuclear matter properties, as for instance, the role of symmetry energy term of the nuclear Equation of State. The presence of diverse reaction products demands for highly performing and very specialized devices, also able to disentangle among different mechanisms, from fast dynamical processes to statistical emission from equilibrated sources. Numerous studies of the effects of N/Z ratio on fusion and associated processes can be found at different energies, together with many examples of the influence of neutron richness on the reaction time scale and the competition between equilibrated and prompt processes. A survey of very recent findings obtained with the CHIMERA and FARCOS devices is presented.

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Contamination in molecular beam epitaxy: the role of arsenic drag effect

1997 ◽  
Vol 175-176 ◽  
pp. 1270-1277 ◽  
Author(s):  
Z.R. Wasilewski ◽  
S.J. Rolfe ◽  
R.A. Wilson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Drag Effect

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation
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