scholarly journals Voltage Degradation Model of Thin Film Capacitors

1985 ◽  
Vol 12 (1) ◽  
pp. 63-70
Author(s):  
T. M. Berlicki
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Breakdown Voltage ◽  
Short Term ◽  
Degradation Model ◽  
Damage Rate ◽  
Thin Film Capacitors ◽  
Voltage Degradation ◽  
Critical Damage

A degradation model of thin film capacitors is presented. This model takes into consideration that: (a) the damage rate dD/dt is a function of the damage value D, and (b) the critical damage Dcis a function of working voltage. On the base of this model, the short term breakdown voltage and its distribution is defined. The experimental data presented conforms with the described model.

Indentation Technique to Investigate Elastic Moduli of Thin Films on Substrates

1988 ◽  
Vol 130 ◽  
Author(s):  
D. S. Stone ◽  
T. W. Wu ◽  
P.-S. Alexopoulos ◽  
W. R. Lafontaine
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Thin Films ◽  
Closed Form ◽  
Elastic Moduli ◽  
Depth Sensing ◽  
Indentation Technique ◽  
Average Displacement ◽  
Elasticity Solutions ◽  
Poor Adhesion

AbstractClosed-form elasticity solutions are introduced, that predict the average displacement beneath square and triangular, uniformly loaded areas at the surface of a bilayer. The solutions aid in the application of depth-sensing indentation techniques for measuring thin film elastic moduli. The elasticity solutions agree closely with experimental data of Al, Si, 1 μm Al on Si, and 2 μm Cr on Si. The case of poor adhesion between the film and substrate is briefly examined.

Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Layer Thickness ◽  
Perovskite Phase ◽  
Frequency Dispersion ◽  
Dead Layer ◽  
Parameter Ratio ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Steady State ◽  
Detection Limit ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors

1998 ◽  
Vol 72 (25) ◽  
pp. 3380-3382 ◽  
Author(s):  
J. Lee ◽  
C. H. Choi ◽  
B. H. Park ◽  
T. W. Noh ◽  
J. K. Lee
Keyword(s):  
Thin Film ◽  
Polarization Switching ◽  
Thin Film Capacitors
Sign in / Sign up

Export Citation Format

Share Document