Surface morphology and electrical property evolution of super-thin Pt film on 6H-SiC substrate during annealing

2011 ◽  
Vol 26 (3) ◽  
pp. 256-261
Author(s):  
Jingjing Yang ◽  
Wenxia Yuan ◽  
Xiaopeng Zeng

We reported the surface morphology and electrical property of super-thin Pt films, ∼2 nm thick, deposited on 6H-SiC (0001) substrates and subsequently annealed from 400 to 1000 °C. The surfaces of the films were found to have a feature of islands growth, and the sizes of the islands increased with increasing annealing temperature. Free carbon, produced by selective reactions between Pt and SiC, diffused toward the top surface across the product layers due to low solubility and composition gradient of carbon throughout the reaction zone. A dramatic change of electrical conductivity of the films was observed. A mechanism analysis reveals that the origin came from the contribution of aggregation of islands on the surface and formation of Pt silicides and a thin layer of crystalline graphite.

2006 ◽  
Vol 317-318 ◽  
pp. 589-592
Author(s):  
Bong Geun Choi ◽  
Jae Kwang Kim ◽  
Won Jae Yang ◽  
Koichi Niihara ◽  
Jong Won Yoon ◽  
...  

The nitrogenated diamond-like carbon films (a-C:H:N) were deposited on Si-wafer by the rf-PECVD method with the addition of nitrogen to the mixture gas of methane and hydrogen. We were investigating the effect of the additive nitrogen gases and annealing in relationship between bonding structure and electrical properties of the deposited films. The electrical conductivity of films increased with the flow rate of nitrogen increasing up to 10 sccm. Also as annealing temperature was increased, the electrical conductivity of films increased. The structure analysis results show that an increase of the flow rate of nitrogen and annealing temperature favor the formation of sp2 bonding in the films. Therefore, we confirmed that the increase of the electrical conductivity is due to structure change by graphitization of the films.


2012 ◽  
Vol 182-183 ◽  
pp. 254-258
Author(s):  
Zhong Li Zhao ◽  
Zun Li Mo ◽  
Zhong Yu Chen

Cellulose/Ag/polyaniline conductive composite with rather excellent electrical conductivity was heterogeneously synthesized in this paper. The UV-Vis analysis indicated that homogeneous nanoAg particles deposited on the surface of cellulose in the form of globe particles. They offered some electrons to polyaniline chains. This behavior resulted to the facts that more polyaniline embedded on cellulose and an integrated electrically conductive network formed. Consequently, the high electrical conductivity of the composite was observed. The value was 3.48 S/cm, which was higher two magnitudes than the electrical conductivity of cellulose/polyaniline composite (2.15×10-2S/cm), and even was higher than the electrical conductivity of pure polyaniline (0.142 S/cm). This paper provided a facile method for the preparation of cellulose/Ag/ polyaniline composite with favorable electrical conductivity.


2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.


2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.


2016 ◽  
Vol 73 (2) ◽  
pp. 198-206 ◽  
Author(s):  
Takuya IKEDA ◽  
Tomoki TAKATA ◽  
Juri TAKAGI ◽  
Kaoru ADACHI ◽  
Yasuhisa TSUKAHARA

Shinku ◽  
1998 ◽  
Vol 41 (3) ◽  
pp. 255-257
Author(s):  
Ayako HIOKI ◽  
Akio OKAMOTO ◽  
Kazuki NATSUKAWA ◽  
Soichi OGAWA

2022 ◽  
pp. 1-10
Author(s):  
Dong Hyun Kim ◽  
Eun-Mi Kim ◽  
Gi-Seok Heo ◽  
Dong Wook Lee ◽  
Jin Young Oh ◽  
...  

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