A Surface Morphology Study On The Effect Of Annealing Temperature To Nanostructured ZnO And Its Reaction Mechanism In Solution Method

2009 ◽  
Author(s):  
Z. Khusaimi ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
M. H. Mamat ◽  
N. Abdullah ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Surface Morphology ◽  
Solution Method ◽  
Annealing Temperature ◽  
Morphology Study

Silicon surface morphology study after exposure to tailored femtosecond pulses

2006 ◽  
Vol 252 (20) ◽  
pp. 7449-7460 ◽  
Author(s):  
V. Hommes ◽  
M. Miclea ◽  
R. Hergenröder
Keyword(s):  
Surface Morphology ◽  
Silicon Surface ◽  
Femtosecond Pulses ◽  
Morphology Study

Surface morphology and electrical property evolution of super-thin Pt film on 6H-SiC substrate during annealing

2011 ◽  
Vol 26 (3) ◽  
pp. 256-261
Author(s):  
Jingjing Yang ◽  
Wenxia Yuan ◽  
Xiaopeng Zeng
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Surface Morphology ◽  
Thin Layer ◽  
Annealing Temperature ◽  
Composition Gradient ◽  
Mechanism Analysis ◽  
Pt Films ◽  
Low Solubility ◽  
Crystalline Graphite

We reported the surface morphology and electrical property of super-thin Pt films, ∼2 nm thick, deposited on 6H-SiC (0001) substrates and subsequently annealed from 400 to 1000 °C. The surfaces of the films were found to have a feature of islands growth, and the sizes of the islands increased with increasing annealing temperature. Free carbon, produced by selective reactions between Pt and SiC, diffused toward the top surface across the product layers due to low solubility and composition gradient of carbon throughout the reaction zone. A dramatic change of electrical conductivity of the films was observed. A mechanism analysis reveals that the origin came from the contribution of aggregation of islands on the surface and formation of Pt silicides and a thin layer of crystalline graphite.

scholarly journals Dynamic potential and surface morphology study of sertraline membrane sensors

2015 ◽  
Vol 6 (3) ◽  
pp. 459-469 ◽  
Author(s):  
M.M. Khater ◽  
Y.M. Issa ◽  
H.B. Hassib ◽  
S.H. Mohammed
Keyword(s):  
Surface Morphology ◽  
Morphology Study ◽  
Dynamic Potential

Spatial Distribution of Carrier Concentration in 4H-SiС Crystal Grown by Solution Method

2016 ◽  
Vol 858 ◽  
pp. 57-60 ◽  
Author(s):  
Zhen Jiang Wang ◽  
Takahiko Kawaguchi ◽  
Kenta Murayama ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Surface Morphology ◽  
Carrier Concentration ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Solution Method ◽  
Peak Frequency ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
View Point

We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method from the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in SF6

2011 ◽  
Vol 418-420 ◽  
pp. 77-81 ◽  
Author(s):  
De Wei Liu ◽  
Yong Guang Huang ◽  
Xiao Ning Zhu ◽  
Xi Yuan Wang ◽  
Hai Juan Yu ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Laser Fluence ◽  
Annealing Temperature ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Multiple Reflections ◽  
Picosecond Laser Pulses ◽  
Wide Wavelength Range ◽  
Impurity Bands ◽  
Tentative Explanation

The microstructured samples were prepared by irradiating silicon surface with picosecond laser pulses in SF6. The surface morphology of microstructured samples irradiated at different laser fluence was characterized by SEM. The samples exhibited high optical absorptance over a wide wavelength range between 300 and 2700 nm. The absorptance of samples irradiated with the fluence of 1.0 J/cm2was measured to be up to 95% between 1100 and 2700 nm. The infared absorptance of the surface-structured samples increased with increasing fluence. Whereas, as the annealing temperature was increased, the infared absorptance of the samples irradiated at the same fluence decreased. A tentative explanation for the effects of laser fluence and annealing temperature on the infared absorptance has been proposed based on the formation of mid-band gap impurity bands and the multiple reflections of light between microstructures.

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