Исследованием термооксидирования фосфида индия под воздействием фосфата висмута, вводимого через газовую фазу, установлено ускоряющее воздействие фосфата висмута на процесс формирования пленок. Величина ускорения составляет от 1.5 до 2 раз, и максимальный прирост пленки достигается в первые 10 мин оксидирования. Определяющим процессом является образование фосфата индия за счет вторичного взаимодействия оксидных форм компонентов подложки, лимитируемое диффузией оксидов в твердой фазе. Методами инфракрасной спектроскопии, локального рентгеноспектрального микроанализа и рентгенофазового анализа установлен состав пленок на поверхности InP, основными компонентами которого являются различные фосфаты индия
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Current status of the studies of x-ray diffraction on tungsten during pulsed heat loads at the scattering station «plasma» at the VEPP-4 source of synchrotron radiation