scholarly journals Solid Phase Growth of Nickel Silicides in Polycrystalline Si Film on SiO2 with Cl Plasma Containing NiCl

2012 ◽  
Keyword(s):  
Solid Phase ◽  
Phase Growth ◽  
Nickel Silicides

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

Dopant redistribution during the solid‐phase growth of CrSi2on Si(100)

1988 ◽  
Vol 64 (8) ◽  
pp. 4187-4193 ◽  
Author(s):  
A. Rockett ◽  
J. E. Greene ◽  
H. Jiang ◽  
M. Östling ◽  
C. S. Petersson
Keyword(s):  
Solid Phase ◽  
Phase Growth ◽  
Dopant Redistribution

Mechanics of Growing Solids and Phase Transitions

2013 ◽  
Vol 535-536 ◽  
pp. 89-93 ◽  
Author(s):  
Alexander V. Manzhirov
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Mathematical Theory ◽  
Solid Phase ◽  
Phase Growth ◽  
Main Attention ◽  
Transition Processes

Phase transitions can be usually observed in nature and technology which effectively utilize certain types of these transitions. An approach to modeling phase transition processes on the basis of the mathematical theory of growing solids is developed. Liquid-solid and gas-solid phase transitions are under consideration. Main attention is paid to the processes of solid phase growth and deformation.

Ion-beam irradiation effect on solid-phase growth of β-FeSi2

2003 ◽  
Vol 16 (3-4) ◽  
pp. 505-508 ◽  
Author(s):  
Y. Murakami ◽  
H. Kido ◽  
A. Kenjo ◽  
T. Sadoh ◽  
T. Yoshitake ◽  
...  
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Irradiation Effect ◽  
Beam Irradiation ◽  
Phase Growth ◽  
Ion Beam Irradiation

scholarly journals Solving the Stefan problem for a solid phase growth on plane plate and spherical surfaces and testing of theoretical equations

2006 ◽  
Vol 51 (19) ◽  
pp. 3969-3978
Author(s):  
M.A. Pasquale ◽  
S.L. Marchiano ◽  
J.L. Vicente ◽  
A.J. Arvia
Keyword(s):  
Stefan Problem ◽  
Solid Phase ◽  
Phase Growth ◽  
Spherical Surfaces ◽  
Plane Plate

Solid-phase growth of Mg2Si by annealing in inert gas atmosphere

2013 ◽  
Vol 10 (12) ◽  
pp. 1708-1711 ◽  
Author(s):  
Takashi Ikehata ◽  
Tatsuya Ando ◽  
Takuya Yamamoto ◽  
Yuta Takagi ◽  
Naoyuki Sato ◽  
...  
Keyword(s):  
Solid Phase ◽  
Inert Gas ◽  
Phase Growth ◽  
Gas Atmosphere

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms

2014 ◽  
Vol 778-780 ◽  
pp. 1162-1165
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nicholas Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid Phase ◽  
Formation Mechanisms ◽  
Layer By Layer ◽  
Phase Growth ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
High Temperature Stage ◽  
Few Layer Graphene

This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035ºC for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using Atomic force microscopy (AFM) and Raman spectroscopy.

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