Solid-phase growth of Mg2Si by annealing in inert gas atmosphere

2013 ◽  
Vol 10 (12) ◽  
pp. 1708-1711 ◽  
Author(s):  
Takashi Ikehata ◽  
Tatsuya Ando ◽  
Takuya Yamamoto ◽  
Yuta Takagi ◽  
Naoyuki Sato ◽  
...  
2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.


2001 ◽  
Vol 38 (11) ◽  
pp. 952-958 ◽  
Author(s):  
Kan ASHIDA ◽  
Yuji HATANO ◽  
Wataru NISHIDA ◽  
Kuniaki WATANABE ◽  
Asami AMANO ◽  
...  

2018 ◽  
Vol 239 (1) ◽  
Author(s):  
A. Lengyel ◽  
Z. Homonnay ◽  
K. Kovács ◽  
Z. Klencsár ◽  
Sz. Németh ◽  
...  

1988 ◽  
Vol 64 (8) ◽  
pp. 4187-4193 ◽  
Author(s):  
A. Rockett ◽  
J. E. Greene ◽  
H. Jiang ◽  
M. Östling ◽  
C. S. Petersson

Metallurgist ◽  
1969 ◽  
Vol 13 (1) ◽  
pp. 30-32
Author(s):  
N. S. Vachugova ◽  
N. V. Sidorov ◽  
G. A. Khasin ◽  
S. K. Filatov
Keyword(s):  

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1500
Author(s):  
Laura Madalina Cursaru ◽  
Roxana Mioara Piticescu ◽  
Dumitru Valentin Dragut ◽  
Robert Morel ◽  
Caroline Thébault ◽  
...  

Iron oxide nanoparticles have received remarkable attention in different applications. For biomedical applications, they need to possess suitable core size, acceptable hydrodynamic diameter, high saturation magnetization, and reduced toxicity. Our aim is to control the synthesis parameters of nanostructured iron oxides in order to obtain magnetite nanoparticles in a single step, in environmentally friendly conditions, under inert gas atmosphere. The physical–chemical, structural, magnetic, and biocompatible properties of magnetite prepared by hydrothermal method in different temperature and pressure conditions have been explored. Magnetite formation has been proved by Fourier-transform infrared spectroscopy and X-ray diffraction characterization. It has been found that crystallite size increases with pressure and temperature increase, while hydrodynamic diameter is influenced by temperature. Magnetic measurements indicated that the magnetic core of particles synthesized at high temperature is larger, in accordance with the crystallite size analysis. Particles synthesized at 100 °C have nearly identical magnetic moments, at 20 × 103 μB, corresponding to magnetic cores of 10–11 nm, while the particles synthesized at 200 °C show slightly higher magnetic moments (25 × 103 μB) and larger magnetic cores (13 nm). Viability test results revealed that the particles show only minor intrinsic toxicity, meaning that these particles could be suited for biomedical applications.


1990 ◽  
Vol 205 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
C. Kirschbaum

AbstractThis paper discusses the intrusion of H into a-Si layers during solid phase epitaxy and the effect of this H on the growth kinetics. We show that during annealing in the presence of water vapor, H is continuously generated at the oxidizing a-Si surface and diffuses into the amorphous layer, where it causes a reduction in the epitaxial growth rate. The measured variation of growth rate with the depth of the amorphous/crystal interface is correlated with the concentration of H at the interface. The diffusion coefficient for H in a-Si is determined by comparing measured depth profiles with calculated values. Hydrogen intrusion is observed even in layers annealed in vacuum and in inert gas ambients. Thin (<;5000 Åthick) a-Si layers are especially susceptible to this effect, but we show that in spite of the presence of H the activation energy for SPE derived earlier from thin-layer data is in good agreement with the intrinsic value obtained from thick, hydrogen-free layers.


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