Microcrystalline/Amorphous Silicon Heterojunction Solar Cells Fabricated by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperature

2011 ◽  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

Amorphous Silicon Solar Cells Techniques for Reactive Conditions

1999 ◽  
Vol 557 ◽  
Author(s):  
Satoshi Shimizu ◽  
Kojiro Okawa ◽  
Toshio Kamiya ◽  
C.M. Fortmann ◽  
Isamu Shimizu
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Silicon Solar Cells ◽  
Doped Zno ◽  
Defect Densities

AbstractThe preparation of amorphous silicon films and solar cells using SiH2Cl2 source gas and electron cyclotron resonance assisted chemical vapor deposition (ECR-CVD) was investigated. By using buffer layers to protect previously deposited layers improved a-Si:H(Cl) solar cells were prepared and studied. The high quality a-Si:H(Cl) films used in this study exhibited low defect densities (~1015cm-3) and high stability under illumination even when the deposition rate was increased to ~15A/s. The solar cells were deposited in the n-i-p sequence. These solar cells achieved VOC values of ~ 0.89V and ~ 3.9% efficiency on Ga doped ZnO (GZO) coated specular substrate. The a-Si:H(C1) electron and hole μτ products were ~10-8cm2/V.

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