scholarly journals Real-Time Stress Measurements in Germanium Thin Film Electrodes during Electrochemical Lithiation/Delithiation Cycling

2015 ◽  
Vol 162 (14) ◽  
pp. A2840-A2846 ◽  
Author(s):  
Siva P. V. Nadimpalli ◽  
Rajasekhar Tripuraneni ◽  
Vijay A. Sethuraman
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress ◽  
Electrochemical Lithiation ◽  
Thin Film Electrodes

scholarly journals Real-time stress measurements in lithium-ion battery negative-electrodes

2012 ◽  
Vol 206 ◽  
pp. 334-342 ◽  
Author(s):  
V.A. Sethuraman ◽  
N. Van Winkle ◽  
D.P. Abraham ◽  
A.F. Bower ◽  
P.R. Guduru
Keyword(s):  
Lithium Ion Battery ◽  
Real Time ◽  
Lithium Ion ◽  
Stress Measurements ◽  
Time Stress ◽  
Negative Electrodes

Real Time Stress Measurements During Growth of Aluminum Nitride on SI(111) and SI(001)

1993 ◽  
Vol 308 ◽  
Author(s):  
W. J. Meng ◽  
J. A. Sell ◽  
G. L. Eesley ◽  
T. A. Perry
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Real Time ◽  
Room Temperature ◽  
Temperature Measurements ◽  
Silicon Substrates ◽  
Temperature Growth ◽  
Stress Measurements ◽  
Time Stress ◽  
Beam Reflection

ABSTRACTWe have performed real time measurements of intrinsic stresses during growth by reactive dc magnetron sputtering of aluminum nitride (AlN) thin films on silicon substrates in an UHV growth chamber. An experimental setup based on laser beam reflection is constructed such that substrate curvature as well as film thickness can be continuously monitored as growth proceeds. On Si(111) substrates, stress measurements were carried out during growth of both polycrystalline and epitaxial A1N films as a function of deposition pressure. This is the first such comparative study to our knowledge for the AlN/Si system. Our room temperature measurements on polycrystalline films corroborates previous post-growth measurements. Our high temperature measurements provide evidence of large intrinsic stresses and negligible stress relaxation during epitaxial growth of AlN on Si(111). We further compared stress behavior during both room temperature and high temperature growth of AlN films on Si(111) and Si(001) substrates. Our observations indicate while intrinsic stresses during room temperature growth can be compressive or tensile depending on plasma conditions, it is tensile during late stage growth at high temperatures.

scholarly journals Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

2002 ◽  
Vol 81 (22) ◽  
pp. 4162-4164 ◽  
Author(s):  
M. U. González ◽  
Y. González ◽  
L. González
Keyword(s):  
Relaxation Process ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

Sign in / Sign up

Export Citation Format

Share Document