Real time stress measurements and elastic constant of aluminum nitride thin films on Si(111)

1993 ◽  
Vol 11 (4) ◽  
pp. 1377-1382 ◽  
Author(s):  
W. J. Meng ◽  
J. A. Sell ◽  
T. A. Perry ◽  
G. L. Eesley
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Elastic Constant ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress

Real Time Stress Measurements During Growth of Aluminum Nitride on SI(111) and SI(001)

1993 ◽  
Vol 308 ◽  
Author(s):  
W. J. Meng ◽  
J. A. Sell ◽  
G. L. Eesley ◽  
T. A. Perry
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Real Time ◽  
Room Temperature ◽  
Temperature Measurements ◽  
Silicon Substrates ◽  
Temperature Growth ◽  
Stress Measurements ◽  
Time Stress ◽  
Beam Reflection

ABSTRACTWe have performed real time measurements of intrinsic stresses during growth by reactive dc magnetron sputtering of aluminum nitride (AlN) thin films on silicon substrates in an UHV growth chamber. An experimental setup based on laser beam reflection is constructed such that substrate curvature as well as film thickness can be continuously monitored as growth proceeds. On Si(111) substrates, stress measurements were carried out during growth of both polycrystalline and epitaxial A1N films as a function of deposition pressure. This is the first such comparative study to our knowledge for the AlN/Si system. Our room temperature measurements on polycrystalline films corroborates previous post-growth measurements. Our high temperature measurements provide evidence of large intrinsic stresses and negligible stress relaxation during epitaxial growth of AlN on Si(111). We further compared stress behavior during both room temperature and high temperature growth of AlN films on Si(111) and Si(001) substrates. Our observations indicate while intrinsic stresses during room temperature growth can be compressive or tensile depending on plasma conditions, it is tensile during late stage growth at high temperatures.

Real Time Optical Method of Stress Measurements in Thin Films

1998 ◽  
Vol 287-288 ◽  
pp. 141-150 ◽  
Author(s):  
G. Moulard ◽  
G. Contoux ◽  
G. Motyl ◽  
M. Courbon
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Optical Method ◽  
Stress Measurements

scholarly journals Real-time stress measurements in lithium-ion battery negative-electrodes

2012 ◽  
Vol 206 ◽  
pp. 334-342 ◽  
Author(s):  
V.A. Sethuraman ◽  
N. Van Winkle ◽  
D.P. Abraham ◽  
A.F. Bower ◽  
P.R. Guduru
Keyword(s):  
Lithium Ion Battery ◽  
Real Time ◽  
Lithium Ion ◽  
Stress Measurements ◽  
Time Stress ◽  
Negative Electrodes

scholarly journals Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

2002 ◽  
Vol 81 (22) ◽  
pp. 4162-4164 ◽  
Author(s):  
M. U. González ◽  
Y. González ◽  
L. González
Keyword(s):  
Relaxation Process ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress

Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms

2006 ◽  
Vol 45 (6A) ◽  
pp. 5169-5173 ◽  
Author(s):  
Ichiro Ohshima ◽  
Morito Akiyama ◽  
Akira Kakami ◽  
Tatsuo Tabaru ◽  
Toshihiro Kamohara ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Piezoelectric Response ◽  
Nickel Based Superalloy

scholarly journals Photogrammetric Process to Monitor Stress Fields Inside Structural Systems

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4023
Author(s):  
Leonardo M. Honório ◽  
Milena F. Pinto ◽  
Maicon J. Hillesheim ◽  
Francisco C. de Araújo ◽  
Alexandre B. Santos ◽  
...  
Keyword(s):  
Boundary Element ◽  
Real Time ◽  
Stress Fields ◽  
Structural Systems ◽  
Unknown Boundary ◽  
Stress Distributions ◽  
Displacement Fields ◽  
Time Stress ◽  
Beam Surface ◽  
Measured Displacement

This research employs displacement fields photogrammetrically captured on the surface of a solid or structure to estimate real-time stress distributions it undergoes during a given loading period. The displacement fields are determined based on a series of images taken from the solid surface while it experiences deformation. Image displacements are used to estimate the deformations in the plane of the beam surface, and Poisson’s Method is subsequently applied to reconstruct these surfaces, at a given time, by extracting triangular meshes from the corresponding points clouds. With the aid of the measured displacement fields, the Boundary Element Method (BEM) is considered to evaluate stress values throughout the solid. Herein, the unknown boundary forces must be additionally calculated. As the photogrammetrically reconstructed deformed surfaces may be defined by several million points, the boundary displacement values of boundary-element models having a convenient number of nodes are determined based on an optimized displacement surface that best fits the real measured data. The results showed the effectiveness and potential application of the proposed methodology in several tasks to determine real-time stress distributions in structures.

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