scholarly journals Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

2002 ◽  
Vol 81 (22) ◽  
pp. 4162-4164 ◽  
Author(s):  
M. U. González ◽  
Y. González ◽  
L. González
Keyword(s):  
Relaxation Process ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress

In-situ and real time stress of 30.4 nm Mo/Si multilayer mirror for the moon-based EUV Camera

2014 ◽  
Author(s):  
Yun-peng Li ◽  
Bo Chen ◽  
Fei He ◽  
Hua-bin Yang ◽  
Xiao-duo Wang ◽  
...  
Keyword(s):  
Real Time ◽  
The Moon ◽  
Multilayer Mirror ◽  
Time Stress

scholarly journals Real-time stress measurements in lithium-ion battery negative-electrodes

2012 ◽  
Vol 206 ◽  
pp. 334-342 ◽  
Author(s):  
V.A. Sethuraman ◽  
N. Van Winkle ◽  
D.P. Abraham ◽  
A.F. Bower ◽  
P.R. Guduru
Keyword(s):  
Lithium Ion Battery ◽  
Real Time ◽  
Lithium Ion ◽  
Stress Measurements ◽  
Time Stress ◽  
Negative Electrodes

Real Time Stress Measurements During Growth of Aluminum Nitride on SI(111) and SI(001)

1993 ◽  
Vol 308 ◽  
Author(s):  
W. J. Meng ◽  
J. A. Sell ◽  
G. L. Eesley ◽  
T. A. Perry
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Real Time ◽  
Room Temperature ◽  
Temperature Measurements ◽  
Silicon Substrates ◽  
Temperature Growth ◽  
Stress Measurements ◽  
Time Stress ◽  
Beam Reflection

ABSTRACTWe have performed real time measurements of intrinsic stresses during growth by reactive dc magnetron sputtering of aluminum nitride (AlN) thin films on silicon substrates in an UHV growth chamber. An experimental setup based on laser beam reflection is constructed such that substrate curvature as well as film thickness can be continuously monitored as growth proceeds. On Si(111) substrates, stress measurements were carried out during growth of both polycrystalline and epitaxial A1N films as a function of deposition pressure. This is the first such comparative study to our knowledge for the AlN/Si system. Our room temperature measurements on polycrystalline films corroborates previous post-growth measurements. Our high temperature measurements provide evidence of large intrinsic stresses and negligible stress relaxation during epitaxial growth of AlN on Si(111). We further compared stress behavior during both room temperature and high temperature growth of AlN films on Si(111) and Si(001) substrates. Our observations indicate while intrinsic stresses during room temperature growth can be compressive or tensile depending on plasma conditions, it is tensile during late stage growth at high temperatures.

scholarly journals 3D cardiac μtissues within a microfluidic device with real-time contractile stress readout

Lab on a Chip ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 153-162 ◽  
Author(s):  
Aereas Aung ◽  
Ivneet Singh Bhullar ◽  
Jomkuan Theprungsirikul ◽  
Shruti Krishna Davey ◽  
Han Liang Lim ◽  
...  
Keyword(s):  
Real Time ◽  
Microfluidic Device ◽  
Three Dimensional ◽  
Stress Measurements ◽  
Contractile Stress

We present the development of three-dimensional (3D) cardiac microtissues within a microfluidic device with the ability to quantify real-time contractile stress measurementsin situ.

In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBE

2002 ◽  
Vol 237-239 ◽  
pp. 998-1002 ◽  
Author(s):  
K. Xu ◽  
N. Yano ◽  
A.W. Jia ◽  
A. Yoshikawa ◽  
K. Takahashi
Keyword(s):  
Relaxation Process ◽  
Real Time ◽  
Strain Relaxation ◽  
Time Analysis ◽  
Real Time Analysis

Probing the Dynamic Self-Assembly Behaviour of Photoswitchable Wormlike Micelles in Real Time

2018 ◽  
Author(s):  
Elaine A. Kelly ◽  
Judith E. Houston ◽  
Rachel Evans
Keyword(s):  
Real Time ◽  
Absorption Spectroscopy ◽  
Self Assembly ◽  
Uv Light ◽  
Wormlike Micelles ◽  
Tetraethylene Glycol ◽  
Light Illumination ◽  
First Time ◽  
Dependent Processes

Understanding the dynamic self-assembly behaviour of azobenzene photosurfactants (AzoPS) is crucial to advance their use in controlled release applications such as<i></i>drug delivery and micellar catalysis. Currently, their behaviour in the equilibrium <i>cis-</i>and <i>trans</i>-photostationary states is more widely understood than during the photoisomerisation process itself. Here, we investigate the time-dependent self-assembly of the different photoisomers of a model neutral AzoPS, <a>tetraethylene glycol mono(4′,4-octyloxy,octyl-azobenzene) </a>(C<sub>8</sub>AzoOC<sub>8</sub>E<sub>4</sub>) using small-angle neutron scattering (SANS). We show that the incorporation of <i>in-situ</i>UV-Vis absorption spectroscopy with SANS allows the scattering profile, and hence micelle shape, to be correlated with the extent of photoisomerisation in real-time. It was observed that C<sub>8</sub>AzoOC<sub>8</sub>E<sub>4</sub>could switch between wormlike micelles (<i>trans</i>native state) and fractal aggregates (under UV light), with changes in the self-assembled structure arising concurrently with changes in the absorption spectrum. Wormlike micelles could be recovered within 60 seconds of blue light illumination. To the best of our knowledge, this is the first time the degree of AzoPS photoisomerisation has been tracked <i>in</i><i>-situ</i>through combined UV-Vis absorption spectroscopy-SANS measurements. This technique could be widely used to gain mechanistic and kinetic insights into light-dependent processes that are reliant on self-assembly.

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