Layer by Layer Etching of the Highly Oriented Pyrolythic Graphite by Using Atomic Layer Etching

2011 ◽  
Vol 158 (12) ◽  
pp. D710 ◽  
Author(s):  
Y. Y. Kim ◽  
W. S. Lim ◽  
J. B. Park ◽  
G. Y. Yeom
Keyword(s):  
Atomic Layer ◽  
Layer By Layer ◽  
Atomic Layer Etching

Atomic Layer Etching of Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
I. H. Libon ◽  
C. Voelkmann ◽  
V. Petrova-Koch ◽  
F. Koch
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Lower Energy ◽  
Room Temperature ◽  
Size Dependence ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Energy Limit ◽  
First Time ◽  
Atomic Layer Etching

AbstractIn this work we describe the controlled shifting of the PL peak of p+ (10 mΩcm) porous silicon (PoSi) by means of atomic layer etching (ALEP). We hereby study the cluster-size dependence of the PL of this material. By this technique of repeated oxidation by H2O2 and stripping of the oxidized surface layer, we reduced the size of the crystallites layer by layer. In all previous reports the PoSi PL appeared to have a natural lower energy limit of ≈ 1.4 eV. We report for the first time a continuous shift of the PoSi PL peak between 1.01 and 1.20 eV. This observation allows us to draw conclusions for the luminescence mechanism: it proves that geometrical quantum confinement in Si crystallites is responsible for the efficient room-temperature PL in PoSi near the indirect bandgap of c-Si. Together with observations of size-independent PL peaks around 1.6 eV in thermally oxidized samples this result indicates that the PoSi PL cannot be described by one origin alone. Both the existence of molecular centers and the geometrical quantum confinement are valid in their specific range of etching and post-anodic treatment parameters.

Rheed Studies of a-Axis Oriented DyBa2Cu3O7 Films Grown by All-MBE

1997 ◽  
Vol 502 ◽  
Author(s):  
Ivan Bozovic ◽  
J. N. Eckstein ◽  
Natasha Bozovic ◽  
J. O'Donnell
Keyword(s):  
Phase Transitions ◽  
Secondary Phase ◽  
Atomic Layer ◽  
High Energy ◽  
Layer By Layer ◽  
Growth Modes ◽  
Flow Surface ◽  
Surface Phase Transitions

ABSTRACTReal-time, in-situ surface monitoring by reflection high-energy electron diffraction (RHEED) has been the key enabling component of atomic-layer-by-layer molecular beam epitaxy (ALL-MBE) of complex oxides. RHEED patterns contain information on crystallographic arrangements and long range order on the surface; this can be made quantitative with help of numerical simulations. The dynamics of RHEED patterns and intensities reveal a variety of phenomena such as nucleation and dissolution of secondary-phase precipitates, switching between growth modes (layer-by-layer, step-flow), surface phase transitions (surface reconstruction, roughening, and even phase transitions induced by the electron beam itself), etc. Some of these phenomena are illustrated here, using as a case study our recent growth of atomically smooth a-axis oriented DyBa2Cu3O7 films.

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

2013 ◽  
Vol 31 (6) ◽  
pp. 061310 ◽  
Author(s):  
Jong Kyu Kim ◽  
Sung Il Cho ◽  
Sung Ho Lee ◽  
Chan Kyu Kim ◽  
Kyung Suk Min ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Atomic Layer ◽  
Contact Layer ◽  
Layer Removal ◽  
Atomic Layer Etching

Layer-by-Layer Molecular Assemblies for Dye-Sensitized Photoelectrosynthesis Cells Prepared by Atomic Layer Deposition

2017 ◽  
Vol 139 (41) ◽  
pp. 14518-14525 ◽  
Author(s):  
Degao Wang ◽  
Matthew V. Sheridan ◽  
Bing Shan ◽  
Byron H. Farnum ◽  
Seth L. Marquard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Molecular Assemblies ◽  
Dye Sensitized ◽  
Layer Deposition

Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

2014 ◽  
Vol 105 (9) ◽  
pp. 093104 ◽  
Author(s):  
Young I. Jhon ◽  
Kyung S. Min ◽  
G. Y. Yeom ◽  
Young Min Jhon
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Al2o3 Film ◽  
Time Resolved ◽  
Atomic Layer Etching

Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

Atomic layer-by-layer construction of Pd on nanoporous gold via underpotential deposition and displacement reaction

RSC Advances ◽  
2015 ◽  
Vol 5 (25) ◽  
pp. 19409-19417 ◽  
Author(s):  
Xuejiao Yan ◽  
Haiyan Xiong ◽  
Qingguo Bai ◽  
Jan Frenzel ◽  
Conghui Si ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Underpotential Deposition ◽  
Nanoporous Gold ◽  
Layer By Layer ◽  
Displacement Reaction ◽  
Galvanic Displacement

Ultrathin Pd films with one to five atomic layers were decorated on nanoporous gold by underpotential deposition and galvanic displacement.

(Invited) Volatile Products during Thermal Atomic Layer Etching of Metal Oxides and Elemental Metals

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 844-844
Author(s):  
Ann Lii-Rosales ◽  
Virginia Johnson ◽  
Sandeep Sharma ◽  
Andrew S Cavanagh ◽  
Steven M George
Keyword(s):  
Metal Oxides ◽  
Atomic Layer ◽  
Volatile Products ◽  
Atomic Layer Etching

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

2021 ◽  
Author(s):  
Suresh Kondati Natarajan ◽  
Austin M. Cano ◽  
Jonathan L. Partridge ◽  
Steven M. George ◽  
Simon D. Elliott
Keyword(s):  
Atomic Layer ◽  
Process Window ◽  
Atomic Layer Etching
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