Low Temperature Direct Bonding of InP and Si3N4-Coated Silicon Wafers for Photonic Device Integration

2012 ◽  
Vol 159 (5) ◽  
pp. H507-H510 ◽  
Author(s):  
Yadong Wang ◽  
Doris Keh-Ting Ng ◽  
Qian Wang ◽  
Jing Pu ◽  
Chongyang Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Wafers ◽  
Photonic Device ◽  
Device Integration

Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration

2013 ◽  
Vol 2 (9) ◽  
pp. N169-N174 ◽  
Author(s):  
J. Fan ◽  
P. Anantha ◽  
C. Y. Liu ◽  
M. Bergkvist ◽  
H. Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Characteristics ◽  
Photonic Device ◽  
Device Integration

Low temperature drive-in of surface-deposited copper in silicon wafers

2004 ◽  
Vol 27 (1-3) ◽  
pp. 435-438 ◽  
Author(s):  
M. L. Polignano ◽  
D. Caputo ◽  
C. Carpanese ◽  
G. Salvà ◽  
L. Vanzetti
Keyword(s):  
Low Temperature ◽  
Silicon Wafers

scholarly journals Hybrid Ag-LiNbO3 Nanocomposite Thin Films with Tailorable Optical Properties

2021 ◽  
Author(s):  
Jijie Huang ◽  
Di Zhang ◽  
Zhimin Qi ◽  
Bruce Zhang ◽  
Haiyan Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ag Nanoparticles ◽  
Photonic Device ◽  
Device Integration ◽  
Nanocomposite Thin Films

Ag nanostructures exhibit extraordinary optical properties, which are important for photonic device integration. Here, we deposited Ag-LiNbO3 (LNO) nanocomposite thin films with Ag nanoparticles (NPs) embedded into LNO matrix, by...

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

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